Physical Origin of Drive Current Enhancement in Ultrathin Ge-on-Insulator n-Channel Metal–Oxide–Semiconductor Field-Effect Transistors under Full Ballistic Transport

Japanese Journal of Applied Physics ◽

10.7567/jjap.50.010110 ◽

2011 ◽

Vol 50 (1R) ◽

pp. 010110 ◽

Author(s):

Shinichi Takagi ◽

Mitsuru Takenaka

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Ballistic Transport ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Physical Origin ◽

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Physical Origin of Drive Current Enhancement in Ultrathin Ge-on-Insulator n-Channel Metal–Oxide–Semiconductor Field-Effect Transistors under Full Ballistic Transport

Japanese Journal of Applied Physics ◽

10.1143/jjap.50.010110 ◽

2011 ◽

Vol 50 ◽

pp. 010110 ◽

Author(s):

Shinichi Takagi ◽

Mitsuru Takenaka

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Ballistic Transport ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Physical Origin ◽

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Strain Effect and Surface Orientation on Drive Current Enhancement of Ballistic Germanium n-Channel Metal–Oxide–Semiconductor Field-Effect Transistors

Japanese Journal of Applied Physics ◽

10.1143/jjap.47.5345 ◽

2008 ◽

Vol 47 (7) ◽

pp. 5345-5351 ◽

Author(s):

Shu-Tong Chang

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Surface Orientation ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Strain Effect ◽

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Drive current enhancement in p-type metal–oxide–semiconductor field-effect transistors under shear uniaxial stress

Applied Physics Letters ◽

10.1063/1.1841452 ◽

2004 ◽

Vol 85 (25) ◽

pp. 6188-6190 ◽

Author(s):

L. Shifren ◽

X. Wang ◽

P. Matagne ◽

B. Obradovic ◽

C. Auth ◽

...

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Uniaxial Stress ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Drive Current ◽

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Experimental evidence of ballistic transport in cylindrical gate-all-around twin silicon nanowire metal-oxide-semiconductor field-effect transistors

Applied Physics Letters ◽

10.1063/1.2840187 ◽

2008 ◽

Vol 92 (5) ◽

pp. 052102 ◽

Author(s):

K. H. Cho ◽

K. H. Yeo ◽

Y. Y. Yeoh ◽

S. D. Suk ◽

M. Li ◽

...

Keyword(s):

Metal Oxide ◽

Experimental Evidence ◽

Field Effect ◽

Field Effect Transistors ◽

Silicon Nanowire ◽

Ballistic Transport ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor

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Hole-Mobility and Drive-Current Enhancement in Ge-Rich Strained Silicon–Germanium Wire Tri-Gate Metal–Oxide–Semiconductor Field-Effect Transistors with Nickel-Germanosilicide Metal Source and Drain

Applied Physics Express ◽

10.1143/apex.3.124201 ◽

2010 ◽

Vol 3 (12) ◽

pp. 124201 ◽

Author(s):

Keiji Ikeda ◽

Minoru Oda ◽

Yuuichi Kamimuta ◽

Yoshihiko Moriyama ◽

Tsutomu Tezuka

Keyword(s):

Metal Oxide ◽

Silicon Germanium ◽

Field Effect ◽

Field Effect Transistors ◽

Hole Mobility ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Strained Silicon ◽

Drive Current ◽

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Increase in Drive Current by Pt/W Protection on Short-Channel Schottky Source/Drain Metal–Oxide–Semiconductor Field-Effect Transistors with Metal Gate

Japanese Journal of Applied Physics ◽

10.1143/jjap.43.6038 ◽

2004 ◽

Vol 43 (9A) ◽

pp. 6038-6039 ◽

Author(s):

Hiroshi Sato ◽

Hiroyuki Sato ◽

Tsuyoshi Iguchi ◽

Masahiro Asada

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Short Channel ◽

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Physical origin and characteristics of gate capacitance in silicon metal-oxide-semiconductor field-effect transistors

Journal of Applied Physics ◽

10.1063/1.367271 ◽

1998 ◽

Vol 83 (9) ◽

pp. 4788-4796 ◽

Author(s):

Yasuyuki Nakajima ◽

Seiji Horiguchi ◽

Masanari Shoji ◽

Yasuhisa Omura

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Physical Origin ◽

Gate Capacitance

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Modeling of quasi-ballistic transport in nanowire metal-oxide-semiconductor field-effect transistors

Journal of Applied Physics ◽

10.1063/1.4933287 ◽

2015 ◽

Vol 118 (15) ◽

pp. 155105 ◽

Author(s):

Yeonghun Lee ◽

Kuniyuki Kakushima ◽

Kenji Natori ◽

Hiroshi Iwai

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Ballistic Transport ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor

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Designing sub-10-nm Metal-Oxide-Semiconductor Field-Effect Transistors via Ballistic Transport and Disparate Effective Mass: The Case of Two-Dimensional BiN

Physical Review Applied ◽

10.1103/physrevapplied.13.044066 ◽

2020 ◽

Vol 13 (4) ◽

Author(s):

Wenhan Zhou ◽

Shengli Zhang ◽

Shiying Guo ◽

Yangyang Wang ◽

Jing Lu ◽

...

Keyword(s):

Metal Oxide ◽

Effective Mass ◽

Field Effect ◽

Field Effect Transistors ◽

Ballistic Transport ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Two Dimensional

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Performance Comparison of InAs, InSb, and GaSb n-Channel Nanowire Metal–Oxide–Semiconductor Field-Effect Transistors in the Ballistic Transport Limit

Applied Physics Express ◽

10.7567/apex.6.034301 ◽

2013 ◽

Vol 6 (3) ◽

pp. 034301 ◽

Author(s):

Kenta Shimoida ◽

Hideaki Tsuchiya ◽

Yoshinari Kamakura ◽

Nobuya Mori ◽

Matsuto Ogawa

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Ballistic Transport ◽

Performance Comparison ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor

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