Heterojunction Diodes Comprised of n-Type Silicon and p-Type Ultrananocrystalline Diamond/Hydrogenated Amorphous Carbon Composite

2011 ◽  
Vol 50 (3R) ◽  
pp. 035101 ◽  
Author(s):  
Shinya Ohmagari ◽  
Sausan Al-Riyami ◽  
Tsuyoshi Yoshitake
Keyword(s):  
Amorphous Carbon ◽  
Carbon Composite ◽  
Hydrogenated Amorphous Carbon ◽  
Type Silicon ◽  
Ultrananocrystalline Diamond ◽  
Heterojunction Diodes ◽  
P Type ◽  
Hydrogenated Amorphous

Formation of p-Type Semiconducting Ultrananocrystalline Diamond/Hydrogenated Amorphous Carbon Composite Films by Boron Doping

2010 ◽  
Vol 49 (3) ◽  
pp. 031302 ◽  
Author(s):  
Shinya Ohmagari ◽  
Tsuyoshi Yoshitake ◽  
Akira Nagano ◽  
Ryota Ohtani ◽  
Hiroyuki Setoyama ◽  
...  
Keyword(s):  
Amorphous Carbon ◽  
Composite Films ◽  
Boron Doping ◽  
Carbon Composite ◽  
Hydrogenated Amorphous Carbon ◽  
Ultrananocrystalline Diamond ◽  
P Type ◽  
Hydrogenated Amorphous

Fabrication of heterojunction diodes comprising nitrogen-doped ultrananocrystalline diamond/hydrogenated amorphous carbon and p-type silicon

2015 ◽  
Vol 1734 ◽  
Author(s):  
Abdelrahman Zkria ◽  
Hiroki Gima ◽  
Sausan Al-Riyami ◽  
Tsuyoshi Yoshitake
Keyword(s):  
Nitrogen Content ◽  
Amorphous Carbon ◽  
Voltage Measurement ◽  
Mixed Gas ◽  
Hydrogenated Amorphous Carbon ◽  
Nitrogen Doped ◽  
Ultrananocrystalline Diamond ◽  
Heterojunction Diodes ◽  
P Type ◽  
Hydrogenated Amorphous

ABSTRACTNitrogen-doped ultrananocrystalline diamond/hydrogenated amorphous carbon composite (UNCD/a-C:H) films were deposited in nitrogen and hydrogen mixed gas atmospheres by coaxial arc plasma deposition (CAPD). Nitrogen-doped films with nitrogen contents of 3 and 8 at.% possessed n-type conduction. The electrical conductivity increased with increasing nitrogen content. Heterojunction diodes with p-type Si exhibited typical rectifying action. From the capacitance-voltage measurement, it was confirmed that the carrier density increases with the nitrogen content.

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