Irradiation Effects of Gas Cluster Ion Beams on Co–Fe Films

ABSTRACTThe effects of energetic Ar cluster ion impacts on Si(111) surfaces have been studied for cluster energies up to l5keV. The mean cluster size was about 1000 atoms, and the smaller sizes could be systematically excluded. Si samples irradiated at different cluster ion energies were analyzed by RBS, ellipsometry, and differential reflectometry. Implantation of Ar in samples irradiated with cluster ions was found by RBS to be detectable, but very small in comparison with samples irradiated with monomer ions of the same energy. The thickness of the damage layer as measured by both ellipsometry and differential reflectometry was also much smaller in the cluster ion irradiated samples.

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LOW-DAMAGE SURFACE TREATMENT BY GAS CLUSTER-ION BEAMS

Surface Review and Letters ◽

10.1142/s0218625x96001601 ◽

1996 ◽

Vol 03 (01) ◽

pp. 891-895 ◽

Cited By ~ 7

Author(s):

M. AKIZUKI ◽

M. HARADA ◽

Y. MIYAI ◽

A. DOI ◽

T. YAMAGUCHI ◽

...

Keyword(s):

Room Temperature ◽

Ion Irradiation ◽

Normal Incidence ◽

Ion Beams ◽

Low Doses ◽

Si Substrate ◽

Irradiation Effects ◽

Cluster Ion Beams ◽

Cluster Ion ◽

Substrate Surfaces

Low-damage irradiation effects of gas cluster-ion beams have been studied at acceleration voltages below 20 kV. The surfaces of targets have been smoothened significantly by CO 2-cluster-ion irradiation at normal incidence. Si substrate surfaces have been cleaned and exhibited low damage after CO 2- and Ar-cluster-ion irradiation at low doses. In the case of CO 2-cluster-ion irradiation, SiO 2 film of about 5.5-nm thickness have grown on Si substrate at room temperature. A damaged layer of less than 2.5-nm thickness has been formed underneath the SiO 2 film.

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Irradiation effects of liquid cluster ion beams on silicon surfaces

Surface and Coatings Technology ◽

10.1016/j.surfcoat.2006.12.035 ◽

2007 ◽

Vol 201 (19-20) ◽

pp. 8628-8631 ◽

Cited By ~ 2

Author(s):

Gikan H. Takaoka ◽

Masakazu Kawashita ◽

Hidetaka Noguchi ◽

Kazuya Nakayama

Keyword(s):

Ion Beams ◽

Silicon Surfaces ◽

Irradiation Effects ◽

Cluster Ion Beams ◽

Cluster Ion

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Surface Planarization with Gas Cluster Ion Beams and Application to Wide-Bandgap Semiconductors

International Journal of Automation Technology ◽

10.20965/ijat.2018.p0170 ◽

2018 ◽

Vol 12 (2) ◽

pp. 170-174 ◽

Cited By ~ 1

Author(s):

Noriaki Toyoda ◽

Keyword(s):

Wide Bandgap ◽

Ion Beams ◽

Cluster Ions ◽

Irradiation Effects ◽

Atomic Ions ◽

Smoothing Effects ◽

Cluster Ion Beams ◽

Cluster Ion ◽

Multiple Collisions ◽

Bandgap Semiconductors

In this study, the fundamental sputtering effects of gas cluster ion beams (GCIBs), especially for surface planarization, are reported. Because gas cluster ions are aggregates of thousands of gas atoms, the collision process for a GCIB, with dense and multiple collisions, differs from that of atomic ions via collision cascading; thus, GCIBs have many unique irradiation effects. Among them, the low-damage and surface smoothing effects are beneficial for the planarization of wide-bandgap semiconductor wafers. The planarization of SiC, diamond, and GaN has been demonstrated using GCIB irradiation.

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