State Transition of a Defect Causing Random-Telegraph-Noise Fluctuation in Stress-Induced Leakage Current of Thin SiO2Films in a Metal–Oxide–Silicon Structure

2013 ◽  
Vol 52 (11R) ◽  
pp. 110203 ◽  
Author(s):  
Takeshi Ishida ◽  
Naoki Tega ◽  
Yuki Mori ◽  
Hiroshi Miki ◽  
Toshiyuki Mine ◽  
...  
Keyword(s):  
Metal Oxide ◽  
Leakage Current ◽  
State Transition ◽  
Silicon Structure ◽  
Random Telegraph Noise ◽  
Telegraph Noise ◽  
Metal Oxide Silicon ◽  
Stress Induced Leakage Current

scholarly journals Nanoparticle-modified metal–oxide–silicon structure enhancing silicon band-edge electroluminescence to near-lasing action

2002 ◽  
Vol 27 (9) ◽  
pp. 713 ◽  
Author(s):  
Ching-Fuh Lin ◽  
Peng-Fei Chung ◽  
Miin-Jang Chen ◽  
Wei-Fang Su
Keyword(s):  
Metal Oxide ◽  
Band Edge ◽  
Silicon Structure ◽  
Metal Oxide Silicon
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