Investigation of random telegraph noise characteristics of Hf-based MONOS nonvolatile memory devices with HfO2 and HfON tunneling layer

This paper investigated the low frequency noise (LFN) utilizing 1/f noise and random telegraph noise (RTN) characteristics of Hf-based metal/oxide/nitride/oxide/silicon (MONOS) nonvolatile memory (NVM) device with HfO2 and HfON tunneling layer (TL). The low frequency noise spectral density (SID ) was investigated to evaluate the interface characteristics with fresh and after programming/erasing (P/E) cycles of 104. Both devices show similar slope of ~1/f in all of the frequency regions. Although HfON TL shows high SID compared to HfO2 TL, increased ratio is 15.4 which is low compared to HfO2 TL of 21.3. As decreasing the channel length from 10 to 2 μm, HfON TL shows small increased ratio of SID . Due to the nitrided characteristics, HfON TL suppress the degradation of interface. Finally, it is found that trap site of HfO2 TL is located near the interface by RTN measurement with capture (τC) and emission time constant (τE).

Dynamics of quantum correlations in a qubit-qutrit spin system under random telegraph noise

We study the dimensionless time evolution of the logarithmic negativity and geometric quantum discord of a qubit-qutrit XXX spin model under the both Markovian and non-Markovian noise channels. We find that at a special temperature interval the quantum entanglement based on the logarithmic negativity reveals entanglement sudden deaths together with revivals. The revival phenomenon is due to the non-Markovianity resulting from the feedback effect of the environment. At high temperatures, the scenario of death and revival disappears. The geometric quantum discord evolves alternatively versus time elapsing with damped amplitudes until the system reaches steady state. It is demonstrated that the dynamics of entanglement negativity undergoes substantial changes by varying temperature, and it is much more fragile against the temperature rather than the geometric quantum discord. The real complex heterodinuclear [Ni(dpt (H2O)Cu(pba)]·2H2O [with pba =1,3-propylenebis(oxamato) and dpt = bis-(3-aminopropyl)amine] is an experimental representative of our considered bipartite qubit-qutrit system that may show remarkable entanglement deaths and revivals at relatively high temperatures and high magnetic field that is comparable with the strength of the exchange interaction J between Cu+2 and Ni+2 ions, i.e., kBT ≈ J and μBB ≈ J.

Design of True Random Number Circuit with Controllable Frequency

True random number generators (TRNGs) have been a research hotspot due to secure encryption algorithm requirements. Therefore, such circuits are necessary building blocks in state-of-the-art security controllers. In this paper, a TRNG based on random telegraph noise (RTN) with a controllable rate is proposed. A novel method of noise array circuits is presented, which consists of digital decoder circuits and RTN noise circuits. The frequency of generating random numbers is controlled by the speed of selecting different gating signals. The results of simulation show that the array circuits consist of 64 noise source circuits that can generate random numbers by a frequency from 1 kHz to 16 kHz.

Random Telegraph Noise in 3D NAND Flash Memories

In this paper, we review the phenomenology of random telegraph noise (RTN) in 3D NAND Flash arrays. The main features of such arrays resulting from their mainstream integration scheme are first discussed, pointing out the relevant role played by the polycrystalline nature of the string silicon channels on current transport. Starting from that, experimental data for RTN in 3D arrays are presented and explained via theoretical and simulation models. The attention is drawn, in particular, to the changes in the RTN dependences on the array working conditions that resulted from the transition from planar to 3D architectures. Such changes are explained by considering the impact of highly-defective grain boundaries on percolative current transport in cell channels in combination with the localized nature of the RTN traps.