Origin of threshold voltage fluctuation caused by ion implantation to source and drain extensions of silicon-on-insulator triple-gate fin-type field-effect transistors using three-dimensional process and device simulations

Toshiyuki Tsutsumi

doi:10.7567/jjap.57.06hc06

Origin of threshold voltage fluctuation caused by ion implantation to source and drain extensions of silicon-on-insulator triple-gate fin-type field-effect transistors using three-dimensional process and device simulations

Japanese Journal of Applied Physics ◽

10.7567/jjap.57.06hc06 ◽

2018 ◽

Vol 57 (6S1) ◽

pp. 06HC06 ◽

Cited By ~ 2

Author(s):

Toshiyuki Tsutsumi

Keyword(s):

Ion Implantation ◽

Threshold Voltage ◽

Field Effect ◽

Field Effect Transistors ◽

Three Dimensional ◽

Silicon On Insulator ◽

Voltage Fluctuation

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Three-dimensional exploration of the origin of threshold voltage fluctuation of silicon-on-insulator triple-gate fin-type field-effect transistors caused by ion implantation to source and drain extensions

Japanese Journal of Applied Physics ◽

10.7567/1347-4065/ab0df1 ◽

2019 ◽

Vol 58 (SD) ◽

pp. SDDE06 ◽

Cited By ~ 1

Author(s):

Toshiyuki Tsutsumi

Keyword(s):

Ion Implantation ◽

Threshold Voltage ◽

Field Effect ◽

Field Effect Transistors ◽

Three Dimensional ◽

Silicon On Insulator ◽

Voltage Fluctuation

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Dependence of three-dimensional bottleneck barrier height minimum on threshold voltage fluctuated by ion implantation of source and drain extensions in silicon-on-insulator triple-gate fin-type field-effect transistors

Japanese Journal of Applied Physics ◽

10.35848/1347-4065/ab8880 ◽

2020 ◽

Vol 59 (SI) ◽

pp. SIIE06

Author(s):

Toshiyuki Tsutsumi

Keyword(s):

Ion Implantation ◽

Barrier Height ◽

Threshold Voltage ◽

Field Effect ◽

Field Effect Transistors ◽

Three Dimensional ◽

Silicon On Insulator

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Very low and broad threshold voltage fluctuation caused by ion implantation to silicon-on-insulator triple-gate fin-type field effect transistor using three-dimensional process and device simulations

Japanese Journal of Applied Physics ◽

10.7567/jjap.56.06gf12 ◽

2017 ◽

Vol 56 (6S1) ◽

pp. 06GF12 ◽

Cited By ~ 4

Author(s):

Toshiyuki Tsutsumi

Keyword(s):

Ion Implantation ◽

Threshold Voltage ◽

Field Effect ◽

Field Effect Transistor ◽

Three Dimensional ◽

Silicon On Insulator ◽

Voltage Fluctuation ◽

Effect Transistor

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Three-Dimensional Simulation of Random-Dopant-Induced Threshold Voltage Fluctuation in Nanoscale Fin-Typed Field Effect Transistors

10.1063/1.2759705 ◽

2007 ◽

Author(s):

Yiming Li ◽

Chih-Hong Hwang ◽

Shao-Ming Yu ◽

Hsuan-Ming Huang

Keyword(s):

Threshold Voltage ◽

Field Effect ◽

Field Effect Transistors ◽

Three Dimensional ◽

Voltage Fluctuation ◽

Dimensional Simulation ◽

Random Dopant

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Reduction of threshold voltage fluctuation in field-effect transistors by controlling individual dopant position

Applied Physics Letters ◽

10.1063/1.4733289 ◽

2012 ◽

Vol 101 (1) ◽

pp. 013503 ◽

Cited By ~ 6

Author(s):

Masahiro Hori ◽

Keigo Taira ◽

Akira Komatsubara ◽

Kuninori Kumagai ◽

Yukinori Ono ◽

...

Keyword(s):

Threshold Voltage ◽

Field Effect ◽

Field Effect Transistors ◽

Voltage Fluctuation

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Threshold voltage adjustment of ferroelectric-gate field effect transistors by ion implantation

Semiconductor Science and Technology ◽

10.1088/0268-1242/24/2/025012 ◽

2009 ◽

Vol 24 (2) ◽

pp. 025012 ◽

Cited By ~ 20

Author(s):

Qiu-Hong Li ◽

Takeshi Horiuchi ◽

Shouyu Wang ◽

Mitsue Takahashi ◽

Shigeki Sakai

Keyword(s):

Ion Implantation ◽

Threshold Voltage ◽

Field Effect ◽

Field Effect Transistors

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Threshold Voltage Dependence of Threshold Voltage Variability in Intrinsic Channel Silicon-on-Insulator Metal–Oxide–Semiconductor Field-Effect Transistors with Ultrathin Buried Oxide

Japanese Journal of Applied Physics ◽

10.1143/jjap.49.04dc01 ◽

2010 ◽

Vol 49 (4) ◽

pp. 04DC01 ◽

Cited By ~ 7

Author(s):

Chiho Lee ◽

Arifin Tamsir Putra ◽

Ken Shimizu ◽

Toshiro Hiramoto

Keyword(s):

Metal Oxide ◽

Threshold Voltage ◽

Field Effect ◽

Voltage Dependence ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Silicon On Insulator ◽

Oxide Semiconductor ◽

Buried Oxide

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Efficient quantum three-dimensional modeling of fully depleted ballistic silicon-on-insulator metal-oxide-semiconductor field-effect-transistors

Journal of Applied Physics ◽

10.1063/1.1699496 ◽

2004 ◽

Vol 95 (12) ◽

pp. 7954-7960 ◽

Cited By ~ 47

Author(s):

M. J. Gilbert ◽

D. K. Ferry

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Three Dimensional ◽

Metal Oxide Semiconductor ◽

Silicon On Insulator ◽

Oxide Semiconductor ◽

Fully Depleted ◽

Three Dimensional Modeling ◽

Dimensional Modeling

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An Efficient Quantum-Based Model for the Threshold Voltage of Thin Film Double Gate/Silicon on Insulator Silicon Metal Oxide Semiconductor Field Effect Transistors

Japanese Journal of Applied Physics ◽

10.1143/jjap.49.024304 ◽

2010 ◽

Vol 49 (2) ◽

pp. 024304 ◽

Cited By ~ 1

Author(s):

Saeed Mohammadi ◽

Ali Afzali-Kusha

Keyword(s):

Thin Film ◽

Metal Oxide ◽

Threshold Voltage ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Silicon On Insulator ◽

Oxide Semiconductor ◽

Double Gate

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Radio-Frequency Small-Signal and Noise Modeling for Silicon-on-Insulator Dynamic Threshold Voltage Metal–Oxide–Semiconductor Field-Effect Transistors

Japanese Journal of Applied Physics ◽

10.1143/jjap.48.04c041 ◽

2009 ◽

Vol 48 (4) ◽

pp. 04C041

Author(s):

Sheng-Chun Wang ◽

Pin Su ◽

Kun-Ming Chen ◽

Sheng-Yi Huang ◽

Cheng-Chou Hung ◽

...

Keyword(s):

Metal Oxide ◽

Radio Frequency ◽

Threshold Voltage ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Silicon On Insulator ◽

Oxide Semiconductor ◽

Dynamic Threshold ◽

Small Signal

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