Flash-Lamp-Induced Explosive Crystallization of Amorphous Films Leaving Behind Periodic Microstructures

2011 ◽  
Author(s):  
K. Ohdaira ◽  
H. Matsumura
Keyword(s):  
Flash Lamp ◽  
Amorphous Films ◽  
Explosive Crystallization ◽  
Periodic Microstructures

Raman Microprobe Analysis of Laser-Induced Microstructures

1985 ◽  
Vol 51 ◽  
Author(s):  
P. M. Fauchet
Keyword(s):  
Spatial Resolution ◽  
Microprobe Analysis ◽  
Pulsed Laser ◽  
Amorphous Films ◽  
Periodic Surface ◽  
Laser Illumination ◽  
Explosive Crystallization ◽  
Raman Microprobe ◽  
Similarities And Differences

ABSTRACTWe study the composition, stress and structure variations across periodic surface undulations produced by pulsed laser illumination of semiconductors, by explosive crystallization of amorphous films, and by laser-assisted CVD. These variations are mapped out with a one micron spatial resolution using a Raman microprobe. Similarities and differences between the three cases are pointed out. These results are also compared to those obtained by deliberately exposing the sample to interfering beams.

TEM studies of spots crystallized in amorphous films by electron beam

1992 ◽  
Vol 50 (2) ◽  
pp. 1348-1349
Author(s):  
V. Yu. Kolosov
Keyword(s):  
Electron Beam ◽  
Crystal Growth ◽  
Single Crystal ◽  
Single Crystals ◽  
Central Zone ◽  
Lattice Orientation ◽  
Powerful Method ◽  
Amorphous Films ◽  
Explosive Crystallization

Electron beam (e-beam) annealing is powerful method for local modifying and crystallization in desired modes of semiconductors and microelectronics components and is also interesting for information storing. Nevertheless, discussed in many papers mechanism of explosive crystallization of amorphous (a-Ge, a-Si) films is still not clear enough and requires new structure studies. It is more relevant for recently discovered growing of micro-crystals with strong internal lattice bending (gradient crystals) in some amorphous films. This paper reports our findings in the structure of spots crystallized in these unusual modes by TEM beam in vacuum deposited (Ge, Se, Se-Te) or prepared by pyrolysis (Fe2O3) unsupported amorphous films. Bendcontour technique was used to analyze the fields of lattice orientation for gradient crystals, including in situ crystal growth studies or videorecord analysis.Explosively crystallized spots in a-Ge, a-Si films are known to consist of 3 zones, Fig. 1. We observed the same zones for films 400-800Å thick, deposited at rates 1- 100Å/s: polycrystal central zone (O), surrounded by a fan of radially elongated single crystals (zone R) which in turn is surrounded by zone (C), formed by concentric or spiral shells (each subdivided into single-crystal subshell and polycrystal subshell).

Drastic suppression of the optical reflection of flash-lamp-crystallized poly-Si films with spontaneously formed periodic microstructures

2010 ◽  
Vol 518 (21) ◽  
pp. 6061-6065 ◽  
Author(s):  
Keisuke Ohdaira ◽  
Takuya Nishikawa ◽  
Kazuhiro Shiba ◽  
Hiroyuki Takemoto ◽  
Hideki Matsumura
Keyword(s):  
Flash Lamp ◽  
Optical Reflection ◽  
Periodic Microstructures ◽  
Si Films

Explosive Crystallization in Eutectic Materials of Phase Change Optical Memory

2003 ◽  
Vol 803 ◽  
Author(s):  
Masahiro Okuda ◽  
Hirokazu Inaba ◽  
Shouji Usuda
Keyword(s):  
Phase Change ◽  
Amorphous Phase ◽  
High Velocity ◽  
Quantum Effect ◽  
Optical Memory ◽  
Amorphous Region ◽  
Amorphous Films ◽  
Rapid Crystallization ◽  
Explosive Crystallization ◽  
Eutectic Materials

ABSTRACTThe excess Sb effect for the dynamics of rapid crystallization in eutectic amorphous films are discussed. This crystallization mechanism describe the propagation with high velocity in the interface separating the crystalline and amorphous phase for InSb and AgInSbTe materials. From these analysis, it is clear that the crystallization is grown up in the boundary of crystalline-amorphous region of eutectic materials, which is different from the stoichiometric GeSbTe media. Also, the quantum effect on the melting, crystallization and solidification of phase change media has been discussed.

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