A Low-Power Squaring Circuit with Regulated Output and Improved Settling Time in 180 nm CMOS for 3–5 GHz IR-UWB Applications

This paper demonstrates a low-power squaring circuit for 3–5 GHz non-coherent Impulse-Radio Ultra-Wideband (IR-UWB) receivers for Pulse Position Modulation (PPM) in a low-cost 180 nm CMOS technology. The squaring, which is the key element in typical IR-UWB receivers, is performed exploiting the non-linear transfer function of a MOS transistor. For a high gain at low power consumption the transistor is biased in the moderate inversion region, where the second-order derivative of the transconductance gm and, as a result, the quadratic term in the transfer function reaches a maximum. A control loop was implemented to set the dc output voltage to a defined value and thus to allow a comparison of the squarer output signal with a defined threshold voltage, which can easily be set and adjusted (e.g. by a DAC). To speed up the settling time of the output and hence to reach higher data rates, a novel slew-rate booster is implemented at the output. Thereby, the squarer is capable of data rates of up to 15.6 Mbit s−1, which is more than two times higher compared to the circuit without the slew-rate booster, while only consuming 72.4 µW in addition. In the extracted post-layout simulations the whole circuitry consumes 724 µA at a 1.8 V power supply, resulting in a power consumption of 1.3 mW.

Design of high speed 2-stage OTA for high capacitive load of 120pF and 2.96V

High speed operational transconductance amplifier (OTA) is used to drive high capacitive loads to reduce the charging time while providing adequate gain and stability. A 2-stage amplifier is proposed to provide high slew rate and sufficient gain and stability. 45nm process technology is used to compare performance with differential and telescopic amplifier designs. Resistive feedback and noise-gain compensation techniques are used to drive 120pF load and provide 2.96V at output for a high slew rate of 2.2V/µs.

High slew rate pulsed electromagnetic field enhances bone consolidation and shortens daily treatment duration in distraction osteogenesis

Aims Distraction osteogenesis (DO) is a useful orthopaedic procedure employed to lengthen and reshape bones by stimulating bone formation through controlled slow stretching force. Despite its promising applications, difficulties are still encountered. Our previous study demonstrated that pulsed electromagnetic field (PEMF) treatment significantly enhances bone mineralization and neovascularization, suggesting its potential application. The current study compared a new, high slew rate (HSR) PEMF signal, with different treatment durations, with the standard Food and Drug Administration (FDA)-approved signal, to determine if HSR PEMF is a better alternative for bone formation augmentation. Methods The effects of a HSR PEMF signal with three daily treatment durations (0.5, one, and three hours/day) were investigated in an established rat DO model with comparison of an FDA-approved classic signal (three hrs/day). PEMF treatments were applied to the rats daily for 35 days, starting from the distraction phase until termination. Radiography, micro-CT (μCT), biomechanical tests, and histological examinations were employed to evaluate the quality of bone formation. Results All rats tolerated the treatment well and no obvious adverse effects were found. By comparison, the HSR signal (three hrs/day) treatment group achieved the best healing outcome, in that endochondral ossification and bone consolidation were enhanced. In addition, HSR signal treatment (one one hr/day) had similar effects to treatment using the classic signal (three three hrs/day), indicating that treatment duration could be significantly shortened with the HSR signal. Conclusion HSR signal may significantly enhance bone formation and shorten daily treatment duration in DO, making it a potential candidate for a new clinical protocol for patients undergoing DO treatments. Cite this article: Bone Joint Res 2021;10(12):767–779.

A QFGMOS-Based gm-Boosted and Adaptively Biased Two-Stage Amplifier Offering Very High Gain and High Bandwidth

A low voltage low power two-stage CMOS amplifier with high open-loop gain, high gain bandwidth product (GBW) and enhanced slew rate is presented in this work. The proposed circuit makes use of folded cascode gm-boosting cells in conjunction with a low voltage gain enhanced cascode mirror using quasi-floating gate (QFGMOS) transistors. QFGMOS transistors are also used in input pair and adaptive biasing, which facilitate large dynamic output current in the presented circuit. Consequently, the slew rate is enhanced without much increase in static power dissipation. The unity gain frequency (UGF) and dc gain of the circuit are 29.4[Formula: see text]MHz and 132[Formula: see text]dB, respectively. The amplifier is operated at 0.6[Formula: see text]V dual supply with 89[Formula: see text][Formula: see text]W power consumption and has a nearly symmetrical average slew rate of 51.5[Formula: see text]V/[Formula: see text]s. All simulations including Monte Carlo and corner analysis are carried out using 180-nm CMOS technology for validating the design with help of spice tools.