Linear bounded potential model for semiconductor band bending

We propose a simple but unexplored model for the semiconductor band bending with the aim to obtain a relatively simple expression to calculate the energy spectrum for the confined levels and the analytical expressions for wave-functions. This model consists of a linear potential but it is bounded or trimmed in energy unlike the well known wedge potential model. We present exact solutions for this potential in the frame of the effective mass approximation and they are valid for electron or hole confinement potential. This model provides a more adequate physical scenario than the wedge potential since it takes into account the charge balance involved in the band bending potential. These results allow to treat confined potential problems as in the case of a two-dimensional electron gas (2DEG) in a simplified way. We discuss the application of this approximation to the recombination time of electrons an holes and for the Franz-Keldysh effect.

Revisiting the Assignment of Innocent and Non-Innocent Counter ions in Lanthanide(III) Solution Chemistry

Lanthanides are found in critical applications from display technology to renewable energy. Often these rare earth elements are used as alloys or functional materials, yet the access to them are trough solution processes. In aqueous solution the rare earths are found predominantly as trivalent ions and charge balance dictates that counter ions are present. The fast ligand exchange and lack of directional bonding in lanthanides complexes has led to questions regarding the speciation of Ln3+ solvates in the presence of various counter ions, and to the distinction between innocent = non-coordinating, and non-innocent = coordinating counter ions. There is limited agreement as to which counter ions that belong to each group, which lead to this report. By using Eu3+ luminescence, it was possible to clearly distinguish between coordinating and non-coordinating ions. To interpret the results it was required to bridge the descriptions of ion pairing and coordination. The da-ta—in form of Eu3+ luminescence spectra and luminescence lifetimes from solutions with varying concentrations of acetate, chloride, nitrate, fluoride, sulfate, perchlorate and triflate—were contrasted to those obtained with ethylenediaminetet-raaceticacid (EDTA), which allowed for the distinction between three Ln3+-anion interaction types. It was possible to con-clude which counter ions are truly innocent (e.g. ClO4- and OTf-), and which clearly coordinate (e.g. NO3- and AcO-). Finally, the considerate amount of data from systems studied under similar conditions allowed the minimum perturbation arising from inner sphere or outer sphere coordination in Eu3+ complexes to be identified.

Investigation of 4,4′- bis [(N carbazole) styryl] biphenyl (BSB4) for a pure blue fluorescent OLED with enhanced efficiency nearing the theoretical limit

4,4′-bis[(N-carbazole) styryl] biphenyl (BSB4 or BSBCz) is one of the widely studied organic fluorescent materials for blue organic electroluminescent devices in the recent times. In this work, BSB4 is used as a guest material to construct the host-guest matrix for the emissive layer (EML) of a pure blue fluorescent organic light-emitting diode (OLED). A pure blue emission suitable for display application with a Commission Internationale de l’Eclairage (CIE) coordinate of (0.147, 0.070) is achieved by the blue-shift of the emission spectrum of the host-guest matrix from that of the pristine guest (BSB4) molecules. The optimization of OLED structures is carried out by considering (i) charge balance in the emissive layer for high exciton density, and (ii) optical interference of generated light in the organic layers for increased light outcoupling. A thorough comparative study on the use of different combinations of widely used hole and electron transport layers to obtain charge balance in the EML of the OLED, thereby enhancing the external quantum efficiency (EQE) is shown. Optical interference effects in the fabricated OLEDs are analyzed by optical simulation of each device structure by transfer matrix method (TMM). With the optimized device structures, we are able to overcome the 2% EQE limit that has been reported so far for blue fluorescent OLEDs with BSB4 as light emitting material and achieve a maximum EQE of 4.08%, which is near to the theoretical limit of EQE for fluorescent OLEDs.

Shock-Induced Damage Mechanism of Perineuronal Nets

The perineuronal net (PNN) region of the brain’s extracellular matrix (ECM) surrounds the neural networks within the brain tissue. The PNN is a protective net-like structure regulating neuronal activity such as neurotransmission, charge balance, and action potential generation. Shock-induced damage of this essential component may lead to neuronal cell death and neurodegenerations. The shock generated during a vehicle accident, fall, or improvised device explosion may produce sufficient energy to damage the structure of the PNN. The goal is to investigate the mechanics of the PNN in reaction to shock loading and to understand the mechanical properties of different PNN components such as glycan, GAG, and protein. In this study, we evaluated the mechanical strength of PNN molecules and the interfacial strength between the PNN components. Afterward, we assessed the PNN molecules’ damage efficiency under various conditions such as shock speed, preexisting bubble, and boundary conditions. The secondary structure altercation of the protein molecules of the PNN was analyzed to evaluate damage intensity under varying shock speeds. At a higher shock speed, damage intensity is more elevated, and hyaluronan (glycan molecule) is most likely to break at the rigid junction. The primary structure of the protein molecules is least likely to fail. Instead, the molecules’ secondary bonds will be altered. Our study suggests that the number of hydrogen bonds during the shock wave propagation is reduced, which leads to the change in protein conformations and damage within the PNN structure. As such, we found a direct connection between shock wave intensity and PNN damage.

Deep hydration of an Li7–3x La3Zr2 M III x O12 solid-state electrolyte material: a case study on Al- and Ga-stabilized LLZO

Single crystals of an Li-stuffed, Al- and Ga-stabilized garnet-type solid-state electrolyte material, Li7La3Zr2O12 (LLZO), have been analysed using single-crystal X-ray diffraction to determine the pristine structural state immediately after synthesis via ceramic sintering techniques. Hydrothermal treatment at 150 °C for 28 d induces a phase transition in the Al-stabilized compound from the commonly observed cubic Ia\overline{3}d structure to the acentric I\overline{4}3d subtype. LiI ions at the interstitial octahedrally (4 + 2-fold) coordinated 48e site are most easily extracted and AlIII ions order onto the tetrahedral 12a site. Deep hydration induces a distinct depletion of LiI at this site, while the second tetrahedral site, 12b, suffers only minor LiI loss. Charge balance is maintained by the incorporation of HI, which is bonded to an O atom. Hydration of Ga-stabilized LLZO induces similar effects, with complete depletion of LiI at the 48e site. The LiI/HI exchange not only leads to a distinct increase in the unit-cell size, but also alters some bonding topology, which is discussed here.

Physicochemical and Analytical Implications of GATES/GEB Principles

The fundamental property of electrolytic systems involved with linear combination f12 = 2∙f(O) – f(H) of elemental balances: f1 = f(H) for Y1 = H, and f2 = f(O) for Y2 = O, is presented. The dependency/independency of the f12 on Charge Balance (f0 = ChB) and other elemental and/or core balances fk = f(Yk) (k = 3,…,K) is the general criterion distinguishing between non-redox and redox systems. The f12 related to a redox system is the primary form of a Generalized Electron Balance (GEB), formulated for redox systems within the Generalized Approach to Electrolytic System (GATES) as GATES/GEB ⊂ GATES. The set of K balances f0,f12,f3,…,fK is necessary/ sufficient/needed to solve an electrolytic redox system, while the K-1 balances f0,f3,…,fK are the set applied to solve an electrolytic non-redox system. The identity (0 = 0) procedure of checking the linear independency/ dependency property of f12 within the set f0,f12,f3,…,fK (i) provides the criterion distinguishing between the redox and non-redox systems and (ii) specifies Oxidation Numbers (ONs) of elements in particular components of the system, and in the species formed in the system. Some chemical concepts, such as oxidant, reductant, oxidation number, equivalent mass, stoichiometry, perceived as derivative within GATES, are indicated. All the information is gained on the basis of the titration Ce(SO4)2 (C) + H2SO4 (C1) + CO2 (C2) ⇨ FeSO4 (C0) + H2SO4 (C01) + CO2 (C02), simulated with use of the iterative computer program MATLAB.

Study of Normally-Off AlGaN/GaN HEMT with Microfield Plate for Improvement of Breakdown Voltage

In this article, we introduce a new type of AlGaN/GaN high electron mobility transistor (HEMT) with microfield plate (FP). We use Silvaco-ATLAS two-dimensional numerical simulation to calculate the performance of conventional HEMT and HEMT with micro-FP and analyze its principle. By studying a new charge balance method provided by HEMTs and micro-FPs, the physical mechanism of FP adjusting the HEMT potential distribution and channel electric field distribution is analyzed. The new FP structure consists of a drain field plate (D-FP), a source field plate (S-FP) and several micro-gate field plates (G-FP) to improve the output characteristics of HEMTs. By adjusting the distribution of potential and channel electric field, a wider and more uniform channel electric field can be obtained, and the breakdown voltage can be increased to 1278 V. Although the on-resistance of the HEMT is slightly increased to 5.24 Ωmm, it is still lower than other reference values. These results may open up a new and effective method for manufacturing high-power devices for power electronics applications.

Circulating Fluidized Bed Fly Ash Mixed Functional Cementitious Materials: Shrinkage Compensation of f-CaO, Autoclaved Hydration Characteristics and Environmental Performance

Circulating fluidized bed (CFB) fly ash is a by-product from CFB power generation, which is hard to utilize in cement because it contains f-CaO and SO3. This work aims to explore the mechanism of the shrinkage compensation of free-CaO (f-CaO) and the autoclaved hydration characteristics and environmental performance of CFB fly ash mixed cementitious materials (CMM). In this work, long-term volume stability of CMM is improved with the addition of CFBFA. These findings suggest that the compressive strength of sample CMM0.5 is the highest under both standard condition (67.21 MPa) and autoclaved condition (89.56 MPa). Meanwhile, the expansion rate (0.0207%) of sample CMM0.5 is the lowest, which proves the shrinkage compensation effect of f-CaO in CFBFA. The main hydration products of CMM0.5 are Ca2SiO4•H2O (C-S-H) gel, CaAl2Si2O7(OH)2•H2O (C-A-S-H) gel and Ca(OH)2. In addition, the high polymerization degree of [Si(Al)O4] and the densified microstructure are presented at the sample CMM0.5. The leaching results indicates that the heavy metals in CMM0.5 satisfies the WHO standards for drinking water due to physical encapsulation and charge balance. Therefore, this investigation provides a novel method of using CFB fly ash in cement.