The Impact of a Paraelectric layer in the FE/DE Stack on Performance of NCFET

<div>In this letter, through TCAD simulations, we show that the introduction of a thin paraelectric (PE) layer between the ferroelectric (FE) and dielectric (DE) layers in an MFIS structure, expands the design space for the FE layer enabling hysteresis-free and steep subthreshold behavior, even with a thicker FE layer. This can be explained by analyzing the FE-PE stack from a capacitance perspective where the thickness of the PE layer in the FE-PE stack has the effect of reducing the FE layer thickness, while also reducing the remnant polarization. Finally, for the same FE-PE-DE stack, analog performance parameters such as $\frac{g_{m}} g_{ds}}$ and $\frac{g_{m}}{I_{d}}$ are analyzed, showing good characteristics over a wide range of gate lengths, at low drain voltages, thus demonstrating applicability for low power applications.</div>

The Impact of a Paraelectric layer in the FE/DE Stack on Performance of NCFET

<div>In this letter, through TCAD simulations, we show that the introduction of a thin paraelectric (PE) layer between the ferroelectric (FE) and dielectric (DE) layers in an MFIS structure, expands the design space for the FE layer enabling hysteresis-free and steep subthreshold behavior, even with a thicker FE layer. This can be explained by analyzing the FE-PE stack from a capacitance perspective where the thickness of the PE layer in the FE-PE stack has the effect of reducing the FE layer thickness, while also reducing the remnant polarization. Finally, for the same FE-PE-DE stack, analog performance parameters such as $\frac{g_{m}} g_{ds}}$ and $\frac{g_{m}}{I_{d}}$ are analyzed, showing good characteristics over a wide range of gate lengths, at low drain voltages, thus demonstrating applicability for low power applications.</div>

Cerium oxide capping on Y-doped HfO2 films for ferroelectric phase stabilization with endurance improvement

The effects of 1-nm-thick CeOx capping on 7.5-nm-thick Y-doped HfO2 films on the ferroelectric characteristics are investigated. From the ferroelectric characteristics of the samples annealed at different temperatures from 450 to 600oC and annealing durations, the time (τ) required to stabilize the ferroelectric phase at each temperature was shortened by the capping. The identical activation energy (Ea) of 2.65 eV for ferroelectric stabilization without and with capping suggests the same kinetics for phase transformation. However, an increase in the remnant polarization (Pr) was obtained. Only a few Ce atoms diffused into the underlying HfO2 film even after 600oC annealing. Ferroelectric switching tests revealed an improvement in endurance from 107 to 1010 by the capping, presumably owing to the suppression of conductive filament formation. Therefore, CeOx capping is effective in promoting the ferroelectric phase in HfO2 with high switching endurance.

Effect of Structural Deficiencies on Bi-Ferroic Behaviors of Lead-Free Bi0.5 Na0.40K0.10TiO3 Films

Lead-free Bi0.5Na0.4K0.1TiO3 (BNKT) ferroelectric films on Pt/TI/SIO2/Si substrates were prepared via a sol-gel spin coating routine. The microstructures and multiferroic behaviors of the films were examined intimately as a function of the annealing time. A rise of annealing time enhanced the crystallization of the films via the perovskite structure. The multiferroic behavior, including simultaneously the magnetic and ferroelectric orders, was observed altogether the films. When the annealing time rose, ferroelectric and magnetic properties were found significantly increased. The remnant polarization (Pr), also as maximum polarization (Pm) respectively increased to the very best values of 11.5 µC/cm2 and 40.0 µC/cm2 under an applied electric field of 500 kV/cm. The saturated magnetization (Ms) of films increased to 2.3 emu/cm3 for the annealing time of 60 minutes. Oxygen vacancies, originating from the evaporation of metal ions during annealing at high temperatures are attributed to the explanation for ferromagnetism within the BNKT films.

The Electrostatic Model of Homeopathy: The Mechanism of Physicochemical Activities of Homeopathic Medicines

This paper attempts to propose a model, called the electrostatic model of homeopathy, to explain a mechanism for the physicochemical activities of highly diluted homeopathic medicines (HMs). According to this proposed model, the source of HMs' action is dipole orientations as electrostatic imprints of the original molecules carried by diluent molecules (such as sugar molecules) or potentization-induced aqueous nanostructures. The nanoscale domains' contact charging and dielectric hysteresis play critical roles in the aqueous nanostructures' or sugar molecules' acquisition of the original molecules' dipole orientations. The mechanical stress induced by dynamization (vigorous agitation or trituration) is a crucial factor that facilitates these phenomena. After dynamization is completed, the transferred charges revert to their previous positions but, due to dielectric hysteresis, they leave a remnant polarization on the aqueous nanostructures or sugar molecules' nanoscale domains. This causes some nanoscale domains of the aqueous nanostructures or sugar molecules to obtain the original substance molecules' dipole orientations. A highly diluted HM may have no molecule of the original substance, but the aqueous nanostructures or sugar molecules may contain the original substance's dipole orientations. Therefore, HMs can precisely aim at the biological targets of the original substance molecules and electrostatically interact with them as mild stimuli.

Evaluation of Potential Function of Core-Shell Model for PbTiO3 Ferroelectric Material and Its Application for Polarization Calculation

In this study, the core-shell model is used to calculate the electric polarization for PbTiO3 ferroelectric material, in which, the interaction potential functions among atoms are determined by the fitting method based on the results from the first principle calculation. The investigations obtained show that the remnant polarization increases under tension and decreases under compression. The remnant polarization decreases with increasing the temperature. The phase transition from the ferroelectric phase to the paraelectric phase is determined at 605K and can occur at lower temperatures of 0K, 300K, 400K, 500K if the compression strain are 8%, 6%, 5%, 2%, corresponding. The hysteresis loop shrinks as the temperature increases and degrades into a curve at the temperature of 605K.