carbon fiber reinforced
Recently Published Documents


TOTAL DOCUMENTS

5164
(FIVE YEARS 1684)

H-INDEX

86
(FIVE YEARS 16)

Polymers ◽  
2022 ◽  
Vol 14 (2) ◽  
pp. 301
Author(s):  
Jiale Hu ◽  
Suhail Mubarak ◽  
Kunrong Li ◽  
Xu Huang ◽  
Weidong Huang ◽  
...  

Three-dimensional (3D) printing of continuous fiber-reinforced composites has been developed in recent decades as an alternative means to handle complex structures with excellent design flexibility and without mold forming. Although 3D printing has been increasingly used in the manufacturing industry, there is still room for the development of theories about how the process parameters affect microstructural properties to meet the mechanical requirements of the printed parts. In this paper, we investigated continuous carbon fiber-reinforced polyphenylene sulfide (CCF/PPS) as feedstock for fused deposition modeling (FDM) simulated by thermocompression. This study revealed that the samples manufactured using a layer-by-layer process have a high tensile strength up to 2041.29 MPa, which is improved by 68.8% compared with those prepared by the once-stacked method. Moreover, the mechanical–microstructure characterization relationships indicated that the compactness of the laminates is higher when the stacked CCF/PPS are separated, which can be explained based on both the void formation and the nanoindentation results. These reinforcements confirm the potential of remodeling the layer-up methods for the development of high-performance carbon fiber-reinforced thermoplastics. This study is of great significance to the improvement of the FDM process and opens broad prospects for the aerospace industry and continuous fiber-reinforced polymer matrix materials.


2022 ◽  
Vol 11 (2) ◽  
pp. 365-377
Author(s):  
Lingwei Yang ◽  
Xueren Xiao ◽  
Liping Liu ◽  
Jie Luo ◽  
Kai Jiang ◽  
...  

AbstractThis work employed an inductively coupled plasma wind tunnel to study the dynamic oxidation mechanisms of carbon fiber reinforced SiC matrix composite (Cf/SiC) in high-enthalpy and high-speed plasmas. The results highlighted a transition of passive/active oxidations of SiC at 800–1600 °C and 1–5 kPa. Specially, the active oxidation led to the corrosion of the SiC coating and interruption of the SiO2 growth. The transition borders of active/passive oxidations were thus defined with respect to oxidation temperature and partial pressure of atomic O in the high-enthalpy and high-speed plasmas. In the transition and passive domains, the SiC dissipation was negligible. By multiple dynamic oxidations of Cf/SiC in the domains, the SiO2 thickness was not monotonously increased due to the competing mechanisms of passive oxidation of SiC and dissipation of SiO2. In addition, the mechanical properties of the SiC coating/matrix and the Cf/SiC were maintained after long-term dynamic oxidations, which suggested an excellent thermal stability of Cf/SiC serving in thermal protection systems (TPSs) of reusable hypersonic vehicles.


2022 ◽  
Vol 11 (2) ◽  
pp. 354-364
Author(s):  
Xiaolin Dang ◽  
Donglin Zhao ◽  
Tong Guo ◽  
Xiaomeng Fan ◽  
Jimei Xue ◽  
...  

AbstractOxidation behaviors of carbon fiber reinforced SiC matrix composites (C/SiC) are one of the most noteworthy properties. For C/SiC, the oxidation behavior was controlled by matrix microcracks caused by the mismatch of coefficients of thermal expansion (CTEs) and elastic modulus between carbon fiber and SiC matrix. In order to improve the oxidation resistance, multilayer SiC-Si3N4 matrices were fabricated by chemical vapor infiltration (CVI) to alleviate the above two kinds of mismatch and change the local stress distribution. For the oxidation of C/SiC with multilayer matrices, matrix microcracks would be deflected at the transition layer between different layers of multilayer SiC-Si3N4 matrix to lengthen the oxygen diffusion channels, thereby improving the oxidation resistance of C/SiC, especially at 800 and 1000 °C. The strength retention ratio was increased from 61.9% (C/SiC-SiC/SiC) to 75.7% (C/SiC-Si3N4/SiC/SiC) and 67.8% (C/SiC-SiC/Si3N4/SiC) after oxidation at 800 °C for 10 h.


Sign in / Sign up

Export Citation Format

Share Document