FLATTENING OF A SCRATCH ON SINGLE CRYSTAL ICE SURFACE

The surface of a monocrystalline ice sample was observed at −5 ◦C (268 K). For which it was superficially polished and allowed to evolve in the presence of activated silica gel for three hours. The evolution of a depression was studied using three-dimensional micrographs obtained with an Olympus OLS4000 LEXT confocal microscope. A predominance of surface diffusion transport was found in the evolution of the depression. This is based both on the value obtained for the surface diffusion coefficient, as well as on the values found for the exponents corresponding to the evolution of the depth of the well and its width.

Why is surface diffusion the same in ultrastable, ordinary, aged, and ultrathin molecular glasses?

The primitive/JG relaxation explains the same surface diffusion coefficient in ordinary, ultrastable and thin film glasses of OTP and TPD.

The interface dynamics of a surfactant drop on a thin viscous film

We study a system of two coupled parabolic equations that models the spreading of a drop of an insoluble surfactant on a thin liquid film. Unlike the previously known results, the surface diffusion coefficient is not assumed constant and depends on the surfactant concentration. We obtain sufficient conditions for finite speed of support propagation and for waiting-time phenomenon by application of an extension of Stampacchia's lemma for a system of functional equations.

Analysis of Erbium and Vanadium Diffusion in Porous Silicon Carbide

Experimental data on diffusion of erbium and vanadium in porous and nonporous silicon carbide at 1700 and 2200°C have been used for modelling diffusion in porous SiC. It is shown that the consideration of pore structure modification under annealing via vacancy redistribution allows for satisfactory description of dopant diffusion. As expected, important contribution to the diffusion in the porous medium is found to be made by the walls of the pores: in SiC, the vacancy surface diffusion coefficient on the walls appears to exceed that in the bulk of the material by an order of magnitude. When thermal treatment transforms pore channels into closed voids, pathways for accelerated diffusion cease to exist and diffusion rates in porous and nonporous SiC become similar.