Ground plane and selective buried oxide based planar junctionless transistor

In this work, we demonstrate a ground plane (GP) based Selective Buried Oxide (SELBOX) Junctionless Transistor (JLT), named as GP-SELBOX-JLT. The use of GP and SELBOX in the proposed device reduces the electric field and enhances volume depletion in the channel, hence improves I ON/I OFF ratio and scalability. Using calibrated 2-D simulation, we have shown that proposed device exhibits better Short Channel Effect (SHE) immunity as compared to SOI-JLT. Therefore, the proposed GP-SELBOX-JLT can be scaled without degrading the performance in sub 20 nm regime. In addition, the ac study has shown that the cutoff frequency (f T) of GP-SELBOX-JLT is almost equal to conventional SOI-JLT.

Enhancement of Short Channel Effect and Drain Induced Barrier Lowering in Fin-FET

The essential requirement of any battery-operated and mobile devices like laptops, cellular phones are that they must be small in size, consume less power, fast processing and cheaper expansion. Gordon Moore found in 1965 that the quantity of transistors on a chip will drive to be twofold every year, by manufacturing the portable devices and building circuit on the silicon chip which makes device cost effective. This drop in size of transistor is termed as scaling. Since scaling faces formidable challenges in nanometer regime, successors have been emerged as FinFET’s. They have thin fin or wing like channels enclosed by several gates. Due to many gates the design helps to improve performance and boost energy efficacy. Present work highlights the role of scaling and how scaling improves the speed of the device. The expectation from the scaled device is to consume as low power as possible, effective in costs and less design time. As we make the instrument more portable, complexity in it becomes infinite. Moore’s law supports us to realize the role of scaling to improve circuit performance and make a portable/mobile device. Here, we design 14nm, 10nm and 7nm Triple gate Fin-FET (TG Fin-FET) and investigate the Drain Induced Barrier Lowering (DIBL) and Short Channel Effect (SCE). By scaling the device DIBL and SCE are reduced giving better performance in terms of power and speed.