Author Correction: Direct identification of Mott Hubbard band pattern beyond charge density wave superlattice in monolayer 1T-NbSe2

A Correction to this paper has been published: https://doi.org/10.1038/s41467-021-23418-z

Direct identification of Mott Hubbard band pattern beyond charge density wave superlattice in monolayer 1T-NbSe2

Understanding Mott insulators and charge density waves (CDW) is critical for both fundamental physics and future device applications. However, the relationship between these two phenomena remains unclear, particularly in systems close to two-dimensional (2D) limit. In this study, we utilize scanning tunneling microscopy/spectroscopy to investigate monolayer 1T-NbSe2 to elucidate the energy of the Mott upper Hubbard band (UHB), and reveal that the spin-polarized UHB is spatially distributed away from the dz2 orbital at the center of the CDW unit. Moreover, the UHB shows a √3 × √3 R30° periodicity in addition to the typically observed CDW pattern. Furthermore, a pattern similar to the CDW order is visible deep in the Mott gap, exhibiting CDW without contribution of the Mott Hubbard band. Based on these findings in monolayer 1T-NbSe2, we provide novel insights into the relation between the correlated and collective electronic structures in monolayer 2D systems.

Evolution of correlated electron behavior from the surface to the bulk in SrxCa1-xVO3

ABSTRACTWe present a detailed depth-sensitive study of the evolution in correlated electron behavior from the surface of the prototypical correlated oxide, SrxCa1-xVO3, to its bulk. Photoemission measurements of varying surface sensitivity are employed to directly compare both the spectral weight and energetics of the correlated electron features, and resonant soft x-ray emission spectroscopy is used as a bulk-sensitive reference. The surface component, which still contributes significantly to photoemission at 2.2 keV, is characterized by a transfer of spectral weight into the incoherent lower Hubbard band and the corresponding shift of these states towards lower binding energy.