Monolithic transistor switch for microwave radiometry

Modern medical microwave diagnostic equipment requires the application of solutions related to the compactness of the developed devices and high performance. Ensuring these requirements is possible by using a modern semiconductor component base based on A3B5 compounds. One of the promising materials for this purpose is gallium nitride. The paper presents the design and manufacturing technology of one of the main control elements of the microwave signal in microwave radiothermometer - monolithic AlGaN/GaN/SiC HEMT SPDT transistor switch.

Analysis of the Usefulness Range of the Averaged Electrothermal Model of a Diode–Transistor Switch to Compute the Characteristics of the Boost Converter

In the design of modern power electronics converters, especially DC-DC converters, circuit-level computer simulations play an important role. This article analyses the accuracy of computations of the boost converter characteristics in the steady state using an electrothermal averaged model of a diode–transistor switch containing an Insulated Gate Bipolar Transistor (IGBT) and a rapid switching diode. This model has a form of a subcircuit for SPICE (Simulation Program with Integrated Circuit Emphasis). The influence of such factors as the switching frequency of the transistor, the duty cycle of the signal controlling the transistor, the input voltage, and the output current of the boost converter on the accuracy of computing the converter output voltage and junction temperature of the IGBT and the diode were analysed. The correctness of the computation results was verified experimentally. Based on the performed computations and measurements, the usefulness range of the model under consideration was determined, and a method of solving selected problems limiting the accuracy of computations of the characteristics of this converter was proposed.

Electrothermal Averaged Model of a Diode-Transistor Switch Including IGBT and a Rapid Switching Diode

This study proposes an electrothermal averaged model of the diode–transistor switch including insulated gate bipolar transistor (IGBT) and a rapid switching diode. The presented model has the form of subcircuits dedicated for simulation program with integrated circuit emphasis (SPICE) and it makes it possible to compute characteristics of DC–DC converters at the steady state considering self-heating phenomena, both in the diode and in IGBT. This kind of model allows computations of voltages, currents and internal temperatures of all used semiconductor devices at the steady state. The formulas used in this model are adequate for both: continuous conducting mode (CCM) and discontinuous conducting mode (DCM). Correctness of the proposed model is verified experimentally for a boost converter including IGBT. Good accuracy in modeling these converter characteristics is obtained.

Selection of Inductor and Snubber Capactor to Optimize the Size and Efficiency of DC-DC Switching Power Converter

This paper presents a selection of inductor and snubber capacitor in non-isolated synchronous DC-DC switching power converter. The circuit is made to operate in Synchronous Discontinuous Conduction Mode (SDCM)/Forced Continuous Conduction Mode (FCCM) of operation for minimum inductor value, to reduce the size, weight and cost of the converter. The turn off loss of the switch induced by SDCM of operation is minimized by connecting snubber capacitor across the transistor switch. Before the switch is turned ON, snubber capacitor requires certain amount of energy must be stored in the inductor to discharge the capacitor energy [1]. The question is how much capacitor and inductor value is required. A series of MATLAB script are executed to find minimum inductor value for FCCM of operation and to select snubber capacitor for maximum efficiency. Complementary gate signals are used to control the ON and OFF of main and auxiliary switch. SDCM of operation due to complementary control gate signal scheme, minimum turn on loss of the transistor switch and low diode reverse recovery loss are achieved. Thus the Zero Voltage Resonant Transition (ZVRT) of transistor switch is realized, both turn on and turn off loss is minimized and also removes the parasitic ringing in inductor current.