graphene nanomesh
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2022 ◽  
Vol 8 (1) ◽  
pp. 8
Author(s):  
Vladislav V. Shunaev ◽  
Olga E. Glukhova

Graphene nanomesh (GNM) is one of the most intensively studied materials today. Chemical activity of atoms near GNM’s nanoholes provides favorable adsorption of different atoms and molecules, besides that, GNM is a prospect material for growing carbon nanotubes (CNTs) on its surface. This study calculates the dependence of CNT’s growing parameters on the geometrical form of a nanohole. It was determined by the original methodic that the CNT’s growing from circle nanoholes was the most energetically favorable. Another attractive property of GNM is a tunable gap in its band structure that depends on GNM’s topology. It is found by quantum chemical methods that the passivation of dangling bonds near the hole of hydrogen atoms decreases the conductance of the structure by 2–3.5 times. Controlling the GNM’s conductance may be an important tool for its application in nanoelectronics.


Small ◽  
2021 ◽  
pp. 2104810
Author(s):  
Yancong Qiao ◽  
Xiaoshi Li ◽  
Jiabin Wang ◽  
Shourui Ji ◽  
Thomas Hirtz ◽  
...  

Nano Energy ◽  
2021 ◽  
pp. 106868
Author(s):  
Wei Xia ◽  
Zhufeng Hou ◽  
Jing Tang ◽  
Jingjing Li ◽  
Watcharop Chaikittisilp ◽  
...  

Nano Futures ◽  
2021 ◽  
Author(s):  
Fayong Liu ◽  
Manoharan Muruganathan ◽  
Yu Feng ◽  
Shinichi Ogawa ◽  
Yukinori Morita ◽  
...  

Abstract The graphene-based thermal rectification is investigated by measuring the thermal transport properties on asymmetric suspended graphene nanomesh devices. Sub-10 nm periodic nanopore phononic crystal structure is successfully patterned on the half area of the suspended graphene by the helium ion beam milling technology. The “differential thermal leakage” method is developed for thermal transport measurement without being disturbed by the electron current leakage through the suspended graphene bridge. Up to 60 % thermal rectification ratio is observed in a typical device with a nanopore pitch of 20 nm. By increasing the nanopore pitch in a particular range, the thermal rectification ratio shows an increment. However, this ratio is degraded by increasing the environmental temperature. This experiment preliminary shows a promising way to develop a high-performance thermal rectifier by using a phononic crystal to introduce the asymmetry on homogenous material.


2021 ◽  
Vol 23 (5) ◽  
pp. 231-237
Author(s):  
O.E. Glukhova ◽  
◽  
M.M. Slepchenkov ◽  
P.V. Barkov ◽  
◽  
...  

This paper studies graphene nanomesh with different neck width is the smallest distance between two neighboring holes. The electrical properties of graphene nanomesh with circular holes were calculated in dependence on its neck width. For the considered structures energetical characteristics including energy gap (Egap), Fermi level (Ef), and density of electron states (DOS) were found. It was established that graphene nanomesh demonstrated both metallic and semiconductor types of conductivity when the neck width was increased along the zigzag direction. In the case of increasing the neck width along armchair direction, graphene nanomesh demonstrated only a metallic type of conductivity. It was observed the anisotropy of electrical conductivity depending on the direction along which the current transfer was carried out.


Micromachines ◽  
2021 ◽  
Vol 12 (6) ◽  
pp. 641
Author(s):  
Yuan Zhai ◽  
Yi Xiang ◽  
Weiqing Yuan ◽  
Gang Chen ◽  
Jinliang Shi ◽  
...  

High sensitivity detection of terahertz waves can be achieved with a graphene nanomesh as grating to improve the coupling efficiency of the incident terahertz waves and using a graphene nanostructure energy gap to enhance the excitation of plasmon. Herein, the fabrication process of the FET THz detector based on the rectangular GNM (r-GNM) is designed, and the THz detector is developed, including the CVD growth and the wet-process transfer of high quality monolayer graphene films, preparation of r-GNM by electron-beam lithography and oxygen plasma etching, and the fabrication of the gate electrodes on the Si3N4 dielectric layer. The problem that the conductive metal is easy to peel off during the fabrication process of the GNM THz device is mainly discussed. The photoelectric performance of the detector was tested at room temperature. The experimental results show that the sensitivity of the detector is 2.5 A/W (@ 3 THz) at room temperature.


Author(s):  
Fayong Liu ◽  
Manoharan Muruganathan ◽  
Shinichi Ogawa ◽  
Yukinori Morita ◽  
Zhongwang Wang ◽  
...  

2021 ◽  
Vol 11 (1) ◽  
Author(s):  
Alireza Kazemi ◽  
Xiang He ◽  
Seyedhamidreza Alaie ◽  
Javad Ghasemi ◽  
Noel Mayur Dawson ◽  
...  

Editor's Note: this Article has been retracted; the Retraction Note is available at https://doi.org/10.1038/s41598-021-84101-3.


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