crystal ion slicing
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2021 ◽  
Author(s):  
Damien Johnson ◽  
Pradeep Bhattacharya
Keyword(s):  

2021 ◽  
Vol 127 (9) ◽  
Author(s):  
Dailei Zhu ◽  
Wenbo Luo ◽  
Taisong Pan ◽  
Shitian Huang ◽  
Kaisheng Zhang ◽  
...  

2021 ◽  
pp. 2100301
Author(s):  
Shitian Huang ◽  
Wenbo Luo ◽  
Xinqiang Pan ◽  
Jinyan Zhao ◽  
Shijun Qiao ◽  
...  

2021 ◽  
Vol 127 (6) ◽  
Author(s):  
Kaisheng Zhang ◽  
Wenbo Luo ◽  
Shitian Huang ◽  
Xiaoyuan Bai ◽  
Yao Shuai ◽  
...  

2021 ◽  
Vol 11 (5) ◽  
pp. 717-723
Author(s):  
Limin Wan ◽  
Wenbo Luo ◽  
Ye Yuan ◽  
Kaisheng Zhang ◽  
Shitian Huang ◽  
...  

In the present work, the contribution of Helium implantation fluence on the Crystal-Ion-Slicing fabrication (CIS) of Y-cut LiNbO3 film were systematically investigated. Y-cut Lithium niobate (LN) thin films with a submicron thickness on the Y-cut LN substrates were successfully fabricated by CIS technique by employing He implantation. By varying the implantation fluence, the structure evolution of the LN exfoliation layer was systematically investigated by Rutherford backscattering/channeling (RBS/C), X-ray Diffraction (XRD), Raman spectroscopy, as well as Atomic Force Microscopy (AFM). Upon gradually increasing the implantation fluence from 1.0 x 1016 to 4.0 x 1016 cm-2, the lattice damage together with the tensile strain in the as-implanted LN becomes intensive according to the Raman spectroscopy investigations. In addition to the crystalline quality, the root mean square roughness becomes 1.4 nm upon increasing fluence till 4.0 x 1016 cm-2. The blistering threshold fluence for Y-cut LN is found to be between 1.0 x 1016 and 2.0 x 1016 cm-2, and the Arrhenius plot of the blistering time as a function of reciprocal temperature shows that the activation of blistering is 2.14 eV, 1.77 eV and 1.44 eV for samples under fluence of 2.0 x 1016, 3.0x 1016 and 4.0 x 1016 cm-2, respectively. Our experimental results unambiguously contribute to exploring the avenue of achieving high-quality layer, particularly highly anisotropic ones, by CIS techniques.


2019 ◽  
Vol 300 ◽  
pp. 111650
Author(s):  
Jiarui Luo ◽  
Wenbo Luo ◽  
Kaisheng Zhang ◽  
Xiaowei Sun ◽  
Yao Shuai ◽  
...  

2019 ◽  
Vol 30 (9) ◽  
pp. 8996-9002
Author(s):  
Xiaoyuan Bai ◽  
Yao Shuai ◽  
Chaoguan Gong ◽  
Xinqiang Pan ◽  
Huizhong Zeng ◽  
...  

2018 ◽  
Vol 57 (4S) ◽  
pp. 04FK05 ◽  
Author(s):  
Yao Shuai ◽  
Chaoguan Gong ◽  
Xiaoyuan Bai ◽  
Chuangui Wu ◽  
Wenbo Luo ◽  
...  

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