Ultra-Compact Power Splitters with Low Loss in Arbitrary Direction Based on Inverse Design Method

The power splitter is a device that splits the energy from an input signal into multiple outputs with equal or uneven energy. Recently, the use of algorithms to intelligently design silicon-based photonic devices has attracted widespread attention. Thus, many optimization algorithms, which are called inverse design algorithms, have been proposed. In this paper, we use the Direct Binary Search (DBS) algorithm designed with three 1 × 3 power splitters with arbitrary directions theoretically. They have any direction and can be connected to other devices in any direction, which greatly reduces the space occupied by the optical integrated circuit. Through the simulation that comes about, we are able to get the insertion loss (IL) of the device we designed to be less than 5.55 dB, 5.49 dB, and 5.32 dB, separately. Then, the wavelength is 1530–1560 nm, so it can be used in the optical communication system. To discuss the impact of the footprint on device performance, we also designed another device with the same function as the second one from the above three devices. Its IL is less than 5.40 dB. Although it occupies a larger area, it has an advantage in IL. Through the design results, three 1 × 3 power splitters can be freely combined to realize any direction, multi-channel, ultra-compact power splitters, and can be better connected with different devices to achieve different functions. At the same time, we also show an example of a combination. The IL of each port of the combined 1 × 6 power splitter is less than 8.82 dB.

Design of Power Splitters Based on Hybrid Plasmonic Waveguides

Plasmonic power splitters based on hybrid plasmonic waveguides (HPWs) are proposed and investigated. The HPW consists of a high-permittivity semiconductor nanowire embedded in a SiO2 dielectric film near a metal surface. The propagation behaviors of Surface Plasmon Polaritons (SPPs) in HPWs are numerically simulated by the 3D finite-difference time-domain (FDTD) method. The incident field is transferred from the middle waveguide to the waveguides on both sides due to the coupling between adjacent waveguides. The intensity distributions can be explained by the multimode interference of SPPs supermodes. According to the field intensity distribution of five HPWs, we design a 1 × 3 power splitter and a 1 × 2 power splitter by reducing the length of some specific waveguides.

Subwavelength silicon photonics for on-chip mode-manipulation

On-chip mode-manipulation is one of the most important physical fundamentals for many photonic integrated devices and circuits. In the past years, great progresses have been achieved on subwavelength silicon photonics for on-chip mode-manipulation by introducing special subwavelength photonic waveguides. Among them, there are two popular waveguide structures available. One is silicon hybrid plasmonic waveguides (HPWGs) and the other one is silicon subwavelength-structured waveguides (SSWGs). In this paper, we focus on subwavelength silicon photonic devices and the applications with the manipulation of the effective indices, the modal field profiles, the mode dispersion, as well as the birefringence. First, a review is given about subwavelength silicon photonics for the fundamental-mode manipulation, including high-performance polarization-handling devices, efficient mode converters for chip-fiber edge-coupling, and ultra-broadband power splitters. Second, a review is given about subwavelength silicon photonics for the higher-order-mode manipulation, including multimode converters, multimode waveguide bends, and multimode waveguide crossing. Finally, some emerging applications of subwavelength silicon photonics for on-chip mode-manipulation are discussed.

High-Performance On-Chip Silicon Beamsplitter Based on Subwavelength Metamaterials for Enhanced Fabrication Tolerance

Efficient power splitting is a fundamental functionality in silicon photonic integrated circuits, but state-of-the-art power-division architectures are hampered by limited operational bandwidth, high sensitivity to fabrication errors or large footprints. In particular, traditional Y-junction power splitters suffer from fundamental mode losses due to limited fabrication resolution near the junction tip. In order to circumvent this limitation, we propose a new type of high-performance Y-junction power splitter that incorporates subwavelength metamaterials. Full three-dimensional simulations show a fundamental mode excess loss below 0.1 dB in an ultra-broad bandwidth of 300 nm (1400–1700 nm) when optimized for a fabrication resolution of 50 nm, and under 0.3 dB in a 350 nm extended bandwidth (1350–1700 nm) for a 100 nm resolution. Moreover, analysis of fabrication tolerances shows robust operation for the fundamental mode to etching errors up to ± 20 nm. A proof-of-concept device provides an initial validation of its operation principle, showing experimental excess losses lower than 0.2 dB in a 195 nm bandwidth for the best-case resolution scenario (i.e., 50 nm).

Connected slots antenna array feeding a high-gain lens for wide-angle beam-steering applications

This paper presents a 60 GHz connected slots linear-phased array feeding a high-gain semi-symmetric lens antenna. This design provides high gain, broadband, and beam-steering capabilities for gigabit rate access and backhaul communications. The connected slots antenna array (CSAA) is excited at 16× equidistant points which not only yields spatial power combining but also allows the progressive phase changes to steer the beam in ±45° in azimuth plane. To characterize the CSAA-fed lens antenna, four different power splitters are fabricated which steer the main beam in 0, 15, 30, and 45°. The lens is designed in a way to overcome the scan loss and get comparatively higher gain when beam is steered away from the broadside. The measured results show 25.4 dBi maximum gain with 3 dB gain bandwidth covering the full band 57–66 GHz whereas 3 dB beam-steering range is ±45° for all frequencies. Besides, the half power beamwidth is 6 and 10° in elevation (E-plane) and azimuth plane (H-plane), respectively.