Preparation and characterization of CdS thin film using chemical bath deposition (CBD) technique for solar cell application

The structural properties of CBD deposited CdS thin films have been studied by varying the processing parameters and Cd/S ratio of the starting Precursors in order to better understand the growth conditions. A CdS thin film was prepared on glass substrate by CBD method from a bath containing Thiourea and Ammonium hydroxide. The structural analysis was performed by X-ray Diffraction (XRD). The deposited CdS thin film was a cubic phase with small nano crystalline grains. The film was deposited at 60°C for 2 hours. After sintering the film at 300°C for 1 hour the color of the film was changed like dark yellowish and the thickness of the film was obtained 100 nm. The FTIR was done at room temperature over 350 cm-1 to 4500 cm-1 and it showed the existence of different functional group in the sample and their probable source. These studies have allowed us to establish a standard set of conditions for the fabrication of homogeneous and continuous very thin CdS films in laboratory and this preparation technique is also suitable for preparing highly efficient thin film due to its advantages such as simple, large area films, low deposition temperature and low-cost method.

Numerical Modelling Analysis for Carrier Concentration Level Optimization of CdTe Heterojunction Thin Film–Based Solar Cell with Different Non–Toxic Metal Chalcogenide Buffer Layers Replacements: Using SCAPS–1D Software

Cadmium telluride (CdTe), a metallic dichalcogenide material, was utilized as an absorber layer for thin film–based solar cells with appropriate configurations and the SCAPS–1D structures program was used to evaluate the results. In both known and developing thin film photovoltaic systems, a CdS thin–film buffer layer is frequently employed as a traditional n–type heterojunction partner. In this study, numerical simulation was used to determine a suitable non–toxic material for the buffer layer that can be used instead of CdS, among various types of buffer layers (ZnSe, ZnO, ZnS and In2S3) and carrier concentrations for the absorber layer (NA) and buffer layer (ND) were varied to determine the optimal simulation parameters. Carrier concentrations (NA from 2 × 1012 cm−3 to 2 × 1017 cm−3 and ND from 1 × 1016 cm−3 to 1 × 1022 cm−3) differed. The results showed that the use of CdS as a buffer–layer–based CdTe absorber layer for solar cell had the highest efficiency (%) of 17.43%. Furthermore, high conversion efficiencies of 17.42% and 16.27% were for the ZnSe and ZnO-based buffer layers, respectively. As a result, ZnO and ZnSe are potential candidates for replacing the CdS buffer layer in thin–film solar cells. Here, the absorber (CdTe) and buffer (ZnSe) layers were chosen to improve the efficiency by finding the optimal density of the carrier concentration (acceptor and donor). The simulation findings above provide helpful recommendations for fabricating high–efficiency metal oxide–based solar cells in the lab.

Numerical Modelling Analysis for Carrier Concentration Level Optimization of CdTe Heterojunction Thin Film–Based Solar Cell with Different Non-Toxic Metal Chalcogenide Buffer Layers Replacements: Using SCAPS-1D Software

Cadmium telluride (CdTe), a metallic dichalcogenide material, has been utilized as an absorber layer for thin film-based solar cells with appropriate configurations, and the SCAPS-1D structures program has been used to evaluate the results. In both known and developing thin film photovoltaic systems, a CdS thin film buffer layer has been frequently employed as a traditional n-type heterojunction partner. In this study, numerical simulation was used to find a suitable non-toxic material for the buffer layer instead of CdS, among various types of buffer layers (ZnSe, ZnO, ZnS, and In2S3), and carrier concentrations for the absorber layer (NA) and buffer layer (ND) were varied to determine the optimal simulation parameters. carrier concentrations (NA from 2 x 1012 cm-3 to 2 x 1017 cm-3 and ND from 1 x 1016 cm-3 to 1 x 1022 ??−3) have been differed. The results showed that the CdS as buffer layer based CdTe absorber layer solar cell has the highest efficiency (?%) of 17.43%. Furthermore, high conversion efficiencies of 17.42% and 16.27% have been found for ZnSe and ZnO based buffer layers, respectively. As a result, ZnO and ZnSe are potential candidates for replacing the CdS buffer layer in thin-film solar cells. Here, the absorber (CdTe) and buffer (ZnSe) layers were chosen to improve the efficiency by finding the optimal density of the carrier concentration (acceptor and donor). The simulation findings above provide helpful recommendations for fabricating high-efficiency metal oxide-based solar cells in the lab.

Influence of Different Annealing Atmosphere Nature on the Properties of Nanoparticles CdS Thin Films Synthesized By Chemical Bath Method.

The Cadmium sulfide (CdS) is the most advantageous material for the manufacture of the elaborate solar cells in thin layers, the study that we present, will relate to the elaborated and the characterization of CdS thin film deposited on glass substrates by chemical bath deposition (CBD) method. This study will help us to know if the annealing atmosphere nature affects the deposition of thin films of CdS. The X-ray diffraction (XRD) analysis reveals that the structures of pure thin films are Hexagonal and polycrystalline with preferential orientation (002). The scanning electron microscopy (SEM) measurements showed that the surface morphology homogeneous and uniform. The energy dispersive X-ray analysis (EDAX) studies confirmed that the films are nearly stoichiometric. The transmittance in the visible region (200-800 nm) is high of 60%, and band gap values oscillated between 2.36 and 2.47 eV for al thin films.

Sol-Gel Synthesis of CdS/Glass & CdS/Si Thin Films for Optoelectronic Devices

Cadmium chalcogenides have gained huge attention during the past few decades from investigators exploring various applications like optoelectronic, photovoltaic, thermoelectric devices etc. In the present work, CdS thin films had been deposited onto glass and silicon substrates using sol - gel spin coating technique. The structural, surface morphological, optical and electrical properties of the synthesized films were studied. The X-Ray diffraction analysis revealed that the prepared films have hexagonal structure with preferential orientation along (0 0 2) plane. The structural parameters such as crystallite size, strain and dislocation density of the prepared films were estimated and reported. The SEM image of the CdS thin films showed a uniform, homogeneous and granular morphology over the entire surface of the substrate. The PL spectrum showed three emission peaks; dominant peak occurs at 575 nm and the other two peaks occur at 525 nm and 480 nm. The FTIR study gave the bonding present in the CdS thin film samples. The Four-probe results showed that the electrical conductivity increases with increase in temperature. The present study suggested that CdS thin films on Si wafer could be a good promising candidate for the fabrication of optoelectronic devices.