Correlation of Volume of Macular Edema with Retinal Tomography Features in Diabetic Retinopathy Eyes

Optical coherence tomography (OCT) enables the detection of macular edema, a significant pathological outcome of diabetic retinopathy (DR). The aim of the study was to correlate edema volume with the severity of diabetic retinopathy and response to treatment with intravitreal injections (compared to baseline). Diabetic retinopathy (DR; n = 181) eyes were imaged with OCT (Heidelberg Engineering, Germany). They were grouped as responders (a decrease in thickness after intravitreal injection of Bevacizumab), non-responders (persistent edema or reduced decrease in thickness), recurrent (recurrence of edema after injection), and treatment naïve (no change in edema at follow-up without any injection). The post-treatment imaging of eyes was included for all groups, except for the treatment naïve group. All eyes underwent a 9 × 6 mm raster scan to measure the edema volume (EV). Central foveal thickness (CFT), central foveal volume (CFV), and total retinal volume (TRV) were obtained from the early treatment diabetic retinopathy study (ETDRS) map. The median EV increased with DR severity, with PDR having the greatest EV (4.01 mm3). This correlated positively with TRV (p < 0.001). Median CFV and CFT were the greatest in severe NPDR. Median EV was the greatest in the recurrent eyes (4.675 mm3) and lowest (1.6 mm3) in the treatment naïve group. Responders and non-responders groups had median values of 3.65 and 3.93 mm3, respectively. This trend was not observed with CFV, CFT, and TRV. A linear regression yielded threshold values of CFV (~0.3 mm3), CFT (~386 µm), and TRV (~9.06 mm3), above which EV may be detected by the current scanner. In this study, EV provided a better distinction between the response groups when compared to retinal tomography parameters. The EV increased with disease severity. Thus, EV can be a more precise parameter to identify subclinical edema and aid in better treatment planning.

An Imaging Enhancement Method for a Terahertz Rotation Mirror Imaging System Based on a Scale-Recurrent Network

The terahertz (THz) rotation mirror imaging system is an alternative to the THz array imaging system. A THz rotation mirror imaging system costs less than a THz array imaging system, while the imaging speed of a THz rotation mirror imaging system is much higher than the imaging speed of a THz raster-scan imaging system under the same hardware conditions. However, there is some distortion in the THz image from the THz rotation mirror imaging system. The distortion, which makes images from the THz rotation mirror imaging system difficult to identify, results from the imaging principle of the THz rotation mirror imaging system. In this article, a method based on the scale-recurrent network (SRN) is put in place to correct the distortion. A comparison between distorted THz images and corrected images shows that the proposed method significantly increases the structural similarity between the THz images and the samples.

Silicon Carbide Wafer Machining by Using a Single Filament Plasma at Atmospheric Pressure

SiC wafers were etched using a filament plasma of He:NF3:O2 (helium:nitrogen trifluoride:oxygen) mixed gas at atmospheric pressure. When 0.5–2 sccm of NF3 was mixed to 2 slm of He filament plasma, the etch depth and etch rate increased, but there was little change in the etch width as the NF3 mixing amount increased. The increment of the NF3 mixing also suppressed the surface roughening of plasma etching. The addition of O2 to the He-NF3 filament plasma slightly increased the SiC wafer etch rate. When the NF3 mixing amount was 2 sccm, the roughness of the etched surface increased sharply by O2 addition. On the contrary, the NF3 mixing amount was 1 sccm; the addition of O2 reduced the roughness more than that of the pristine. The roughness of the pristine SiC wafer specimens is in the range of Ra 0.7–0.8 nm. After 30 min of etching on a 6 mm by 6 mm square area, the roughness of the etched surface reduced to Ra 0.587 nm, while the etch rate was 2.74 μm/h with a He:NF3:O2 of 2:1:3 (slm:sccm:sccm) filament plasma and 3 mm/s speed of raster scan etch of the optimized roughening suppression etching recipe.