Defect induced ferromagnetic ordering and room temperature negative magnetoresistance in MoTeP

The magneto-transport, magnetization and theoretical electronic-structure have been investigated on type-II Weyl semimetallic MoTeP. The ferromagnetic ordering is observed in the studied sample and it has been shown that the observed magnetic ordering is due to the defect states. It has also been demonstrated that the presence of ferromagnetic ordering in effect suppresses the magnetoresistance (MR) significantly. Interestingly, a change-over from positive to negative MR is observed at higher temperature which has been attributed to the dominance of spin scattering suppression.

Tidal effects for spinning particles

Expanding on the recent derivation of tidal actions for scalar particles, we present here the action for a tidally deformed spin-1/2 particle. Focusing on operators containing two powers of the Weyl tensor, we combine the Hilbert series with an on-shell amplitude basis to construct the tidal action. With the tidal action in hand, we compute the leading-post-Minkowskian tidal contributions to the spin-1/2–spin-1/2 amplitude, arising at $$ \mathcal{O} $$ O (G2). Our amplitudes provide evidence that the observed long range spin-universality for the scattering of two point particles extends to the scattering of tidally deformed objects. From the scattering amplitude we find the conservative two-body Hamiltonian, linear and angular impulses, eikonal phase, spin kick, and aligned-spin scattering angle. We present analogous results in the electromagnetic case along the way.

Генерация спиновых токов в n-Si, легированном фосфором, сурьмой и висмутом и влияние на них процессов рассеяния спинов с переворотом

Doping of silicon with bismuth leads to additional spin scattering of the conduction electron by the spin-orbit potential introduced by a heavy donor. In this paper, we discuss spin flip scattering influence on the generation of spin currents in silicon with electronic conductivity. Based on the theory of spin pumping and the diffusion model, the values of spin currents and voltages of the ISHE are calculated with varying the type of donor and its concentration and the spin diffusion lengths. Calculations made it possible to find the dependences of the magnitudes of the effects on the parameters of silicon layers doped with bismuth, and to explain the absence of ISHE signals when the silicon layer is doped only with phosphorus or antimony with a concentration of Nd> 1019 cm-3.