epitaxial silicon film
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Determining the Complete Residual Stress Tensors in SOS Hetero-Epitaxial Thin Film Systems by the Technique of X-Ray Diffraction

2010 ◽  
Vol 443 ◽  
pp. 742-747 ◽  
Author(s):  
Mei Liu ◽  
Liang Chi Zhang ◽  
Andrew Brawley ◽  
Petar Atanackovic ◽  
Steven Duvall
Keyword(s):  
Thin Film ◽  
Residual Stress ◽  
Silicon Film ◽  
Diffraction Method ◽  
Epitaxial Silicon ◽  
X Ray Diffraction ◽  
Epitaxial Thin Film ◽  
X Ray ◽  
Stress Tensors ◽  
Epitaxial Silicon Film

This paper investigates residual stress of epitaxial silicon film on SOS thin film systems. The emphasis was to develop a method to obtain accurately the complete residual stress tensors. It was found that using the multiple asymmetric X-ray diffraction method to measure strains in 13 [hkl] directions, the complete residual stress tensors can be determined reliably. The results were verified by both the Raman Backscattering and the substrate curvature methods.

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