Ultimate 0.34 nm Gate-length Side-Wall Transistors with Atomic Level Channel

Despite 55 years of efforts into short gate length transistors following the Moore’s law, the gate length below 1 nm has not been realized. Here, we demonstrated a side-wall monolayer MoS2 transistors with ultimate 0.34 nm gate length using the edge of graphene as gate electrode. Moreover, large area of chemical vapor deposition graphene and MoS2 are used for 2-inch wafer production. These ultrashort devices show excellent ON/OFF current ratio of 2 × 105. Simulation results indicate that the MoS2 side-wall effective channel length approaches 0.34 nm in the ON state. This graphene edge gate combined with MoS2 vertical channel structure provides an efficient gate control ability and enables the physical gate length scaling down to atomic level, which shows great potential to build next generation electronics.