Processing Techniques with Heating Conditions for Multiferroic Systems of BiFeO3, BaTiO3, PbTiO3, CaTiO3 Thin Films

In this chapter, we have report a list of synthesis methods (including both synthesis steps & heating conditions) used for thin film fabrication of perovskite ABO3 (BiFeO3, BaTiO3, PbTiO3 and CaTiO3) based multiferroics (in both single-phase and composite materials). The processing of high quality multiferroic thin film have some features like epitaxial strain, physical phenomenon at atomic-level, interfacial coupling parameters to enhance device performance. Since these multiferroic thin films have ME properties such as electrical (dielectric, magnetoelectric coefficient & MC) and magnetic (ferromagnetic, magnetic susceptibility etc.) are heat sensitive, i.e. ME response at low as well as higher temperature might to enhance the device performance respect with long range ordering. The magnetoelectric coupling between ferromagnetism and ferroelectricity in multiferroic becomes suitable in the application of spintronics, memory and logic devices, and microelectronic memory or piezoelectric devices. In comparison with bulk multiferroic, the fabrication of multiferroic thin film with different structural geometries on substrate has reducible clamping effect. A brief procedure for multiferroic thin film fabrication in terms of their thermal conditions (temperature for film processing and annealing for crystallization) are described. Each synthesis methods have its own characteristic phenomenon in terms of film thickness, defects formation, crack free film, density, chip size, easier steps and availability etc. been described. A brief study towards phase structure and ME coupling for each multiferroic system of BiFeO3, BaTiO3, PbTiO3 and CaTiO3 is shown.

Significantly suppressing ion migration in metal halide perovskites via trace of multivalent interstitial doping

Cations with suitable sizes to occupy an interstitial site of perovskite crystals have been widely used to inhibit ion migration and promote performance and stability of perovskite optoelectronics. However, the interstitial doping accompanies inevitable lattice strain to impair long-range ordering and stability of the crystals to cause a sacrificial trade-off. Here, we unravel the evident influence of the valence states of the interstitial cations on their efficacy to suppress the ion migration. Incorporation of a trivalent neodymium cation (Nd3+) effectively mitigates the ion migration in the perovskite lattice with significantly reduced dosage (0.08%) compared to a widely used monovalent cation dopant (Na+, 0.45%). Less but better, the prototypical perovskite solar cells incorporated with Nd3+ exhibits significantly enhanced photovoltaic performance and operational stability.

Pyridinium 3-nitrobenzoate–3-nitrobenzoic acid (1/1)

The crystal structure of the product of the neutralization reaction between 3-nitrobenzoic acid and pyridine is reported. The entities that crystallized are a pyridinium cation, a 3-nitrobenzoate anion and a 3-nitrobenzoic acid molecule in a 1:1:1 molar ratio, C5H6N+·C7H4NO4 −·C7H5NO4. Distinct sets of hydrogen bonds link the pyridinium and benzoate ions (N—H...O) and the acid and benzoate moieties (O—H...O). The hydrogen bonding along with π–π stacking between the acid and benzoate moieties accounts for the long-range ordering of the crystal.

Relaxor Ferroelectric Oxides: Concept to Applications

Ferroelectric ceramic is one of the most important functional materials, which has great importance in modern technologies. A ferroelectric ceramic simultaneously exhibits dielectric, piezoelectric, ferroelectric, and pyroelectric properties. The inherent ferroelectric properties are directly related to long-range electric dipoles arrangement in the ferroelectric domains and its response to external stimuli. However, the interruption of the long-range ordering of dipoles leads to the formation of a special class of material is known as relaxor ferroelectric. It shows quite different physical properties as compared to ferroelectric (normal ferroelectric). The origin and design of relaxor ferroelectric are quite interesting for fundamental perspective along with device applications. Therefore, the origin of relaxor ferroelectric along with its fundamental understanding for possible future applications, have been explained briefly in the present chapter.

Quinine dihydrochloride hemihydrate

Numerous non-covalent interactions link together discrete molecules in the crystal structure of the title compound, 2C20H26N2O2 2+·4Cl−·H2O {systematic name: 4-[(5-ethenyl-1-azoniabicyclo[2.2.2]octan-2-yl)(hydroxy)methyl]-6-methoxyquinolin-1-ium dichloride hemihydrate}. A combination of hydrogen bonding between acidic H atoms and the anions in the asymmetric unit forms a portion of the observed hydrogen-bonded network. π–π interactions between the aromatic portions of the cation appear to play a role in the formation of the long-range ordering. One ethylene double bond was found to be disordered. The disorder extends to the neighboring carbon and hydrogen atoms.

The Influence of Martensitic Intercalations in Magnetic Shape Memory NiCoMnAl Multilayered Films

Hysteresis and transformation behavior were studied in epitaxial NiCoMnAl magnetic shape memory alloy thin films with varying number martensitic intercalations (MIs) placed in between. MIs consists of a different NiCoMnAl composition with a martensitic transformation occurring at much higher temperature than the host composition. With increasing number of intercalations, we find a decrease in hysteresis width from 17 K to 10 K. For a large difference in the layers thicknesses this is accompanied by a larger amount of residual austenite. If the thicknesses become comparable, strain coupling between them dominates the transformation process, which manifests in a shift of the hysteresis to higher temperatures, splitting of the hysteresis in sub hysteresis and a decrease in residual austenite to almost 0%. A long-range ordering of martensite and austenite regions in the shape of a 3D checker board pattern is formed at almost equal thicknesses.

Structural evolution in thermoelectric zinc antimonide thin films studied by in situ X-ray scattering techniques

Zinc antimonides have been widely studied owing to their outstanding thermoelectric properties. Unlike in the bulk state, where various structurally unknown phases have been identified through their specific physical properties, a number of intermediate phases in the thin-film state remain largely unexplored. Here, in situ X-ray diffraction and X-ray total scattering are combined with in situ measurement of electrical resistivity to monitor the crystallization process of as-deposited amorphous Zn-Sb films during post-deposition annealing. The as-deposited Zn-Sb films undergo a structural evolution from an amorphous phase to an intermediate crystalline phase and finally the ZnSb phase during heat treatment up to 573 K. An intermediate phase (phase B) is identified to be a modified β-Zn8Sb7 phase by refinement of the X-ray diffraction data. Within a certain range of Sb content (∼42–55 at%) in the films, phase B is accompanied by an emerging Sb impurity phase. Lower Sb content leads to smaller amounts of Sb impurity and the formation of phase B at lower temperatures, and phase B is stable at room temperature if the annealing temperature is controlled. Pair distribution function analysis of the amorphous phase shows local ordered units of distorted ZnSb4 tetrahedra, and annealing leads to long-range ordering of these units to form the intermediate phase. A higher formation energy is required when the intermediate phase evolves into the ZnSb phase with a significantly more regular arrangement of ZnSb4 tetrahedra.