N-face GaN substrate roughening for improved performance GaN-on-GaN LED

Purpose This study aims to focus on roughening N-face (backside) GaN substrate prior to GaN-on-GaN light-emitting diode (LED) growth as an attempt to improve the LED performance. Design/methodology/approach The N-face of GaN substrate was roughened by three different etchants; ammonium hydroxide (NH4OH), a mixture of NH4OH and H2O2 (NH4OH: H2O2) and potassium hydroxide (KOH). Hexagonal pyramids were successfully formed on the surface when the substrate was subjected to the etching in all cases. Findings Under 30 min of etching, the highest density of pyramids was obtained by NH4OH: H2O2 etching, which was 5 × 109 cm–2. The density by KOH and NH4OH etchings was 3.6 × 109 and 5 × 108 cm–2, respectively. At standard operation of current density at 20 A/cm2, the optical power and external quantum efficiency of the LED on the roughened GaN substrate by NH4OH: H2O2 were 12.3 mW and 22%, respectively, which are higher than its counterparts. Originality/value This study demonstrated NH4OH: H2O2 is a new etchant for roughening the N-face GaN substrate. The results showed that such etchant increased the density of the pyramids on the N-face GaN substrate, which subsequently resulted in higher optical power and external quantum efficiency to the LED as compared to KOH and NH4OH.

Effect of Substrate Surface Roughening on the Capacitance and Cycling Stability of Ni(OH)2 Nanoarray Films

The effect of substrate surface roughening on the capacitance of Ni(OH)2/NiOOH nanowall array samples produced via chemical bath deposition for 2, 4, 6, 24 and 48 h on an as-received stainless steel substrate and the same substrate after sandblasting has been investigated. Symmetric cells were subjected to 120,000 charge-discharge cycles to access changes in their capacitance. Specific capacitances were derived from cyclic voltammetry and charge-discharge cycling under a three electrode setup. Substrate roughening significantly increases the capacitance of symmetric cells and film stability since film exfoliation does not occur to the same degree as on the as-received substrate. Interestingly, films deposited on a roughened substrate for 6, 24 and 48 h also exhibit self-recovery of capacitance, which could be related to an electrodissolution-electrodeposition effect. With the use of a roughened substrate, the thinnest film gives the highest specific capacitance, 1456 F g−1, whilst the thickest one shows the highest areal capacitance, 235 mF cm−2, after 20,000 cycles. These results reveal the promise of surface roughening toward increasing the capacitance and stability of Ni(OH)2/NiOOH films.

Adhesion Promotion by Surface-Modification at the Pmma-Metal Interface for Liga-Type Processing

The formation of high aspect ratio Micro-Electro-Mechanical Structures (HI-MEMS) requires good adhesion of the thick microstructures to the substrate. The interfacial bond strength between PMMA and various metal substrates (Ti, Cu, Au, and Ni), in the preliminary stages of the LIGA process, was evaluated by shear stress measurement. Adhesion promotion processes have been investigated such as texturing of the surface of Ti and Cu substrates by chemical oxidation or thermal processing of the PMMA sheet, and use of a positive resist as an interfacial adhesion promoter. Several fold increases in bond strength were obtained, the largest increase associated with a combination of substrate roughening, thermal treatment and use of adhesion promoters.