Robustness study of bandpass NGD behavior of ring-stub microstrip circuit under temperature variation

This paper explores an original study of bandpass (BP) negative group delay (NGD) robustness applied to the ring-stub passive circuit. The proof of concept (PoC) circuit is constituted by a ring associated with the open-end stub implemented in microstrip technology. An innovative experimental setup of a temperature room containing the NGD PoC connected to a vector network analyzer is described. Then, the electrothermal data of S-parameters are measured by varying the ambient or room temperature range from 20 to 60°C, i.e. 40°C maximal variation. The empirical results of the group delay (GD), transmission and reflection coefficient mappings versus the couple (temperature, frequency) highlight how the temperature affects the BP NGD responses. An innovative electrothermal calibration technique by taking into account the interconnection cable influence is developed. The electrothermal robustness analysis is carried out by variations of the NGD center frequency, cut-off frequencies and value in function of the temperature.

Bandpass NGD investigation of O-shape fully distributed structure with S-matrix modelling

Purpose The aim of this paper is to provide the theoretical conceptualization of a bandpass (BP) negative group delay (NGD) microstrip circuit. The main objective is to provide a theorization of the particular geometry of the microstrip circuit with experimental validation of the NGD effect. Design/methodology/approach The methodology followed in this work is organized in three steps. A theoretical model is established of equivalent S-parameters model using Y-matrix analysis. The GD analysis is also presented by showing that the circuit presents a possibility to generate NGD function around certain frequencies. To validate the theoretical model, as proof-of-concept (POC), a microstrip prototype is designed, fabricated and tested. Findings This work clearly highlighted the modelled (analytical design model), simulated (ADS simulation tool) and measured results are in good correlation. Relying on the proposed theoretical, numerical and experimental models, the BP NGD behaviour is validated successfully with GD responses specified by the NGD centre frequency: it is observed around 2.35 GHz, with an NGD value of about −2 ns. Research limitations/implications It is to be noticed the proposed GD analysis requires limitations of the theoretical NGD model. It is depicted and validated through a POC demonstrating that the circuit presents a possibility to generate NGD function around certain frequencies (assuming constraints around usable frequency and bandwidth). Practical implications The NGD O-shape topology developed in this work could be exploited in the future in the microwave and radiofrequency context. Thus, it is expected to develop GD equalization technique for radiofrequency and microwave filters, GD compensation of oscillators, filters and communication systems, design of broadband switch-less bi-directional amplifiers, efficient enhancement of feedforward amplifiers, design method of frequency independent phase shifters with negligible delay, synthesis method of arbitrary-angle beamforming antennas. The BP NGD behavior may also be successfully used for the reduction of resonance effect for the electronic compatibility (EMC) of electronic devices. Social implications The non-conventional NGD O-circuit theoretical development and validation through experimental POC could be exploited by academic and industrial developers in the area of wireless communications including, but not restricted to, 5-generation communication systems. The use of the remarkable NGD effect is also useful for the mitigation of electromagnetic interferences between electronic devices and more and more complex electromagnetic environment (current development of Internet of Things[ IoT]). Originality/value The originality of this work relies on the new NGD design proposed in this work including the extraction of S-matrix parameters of the microstrip novel structure designed. The validation process based upon an experimental POC showed very interesting levels of NGD O-circuit (nanosecond-GD duration).