defect levels
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2021 ◽  
pp. 131150
Author(s):  
Vibhor Kumar ◽  
A.S. Maan ◽  
Jamil Akhtar

Nanomaterials ◽  
2021 ◽  
Vol 11 (9) ◽  
pp. 2273
Author(s):  
Xue Zhang ◽  
Ruijuan Qi ◽  
Shangwei Dong ◽  
Shuai Yang ◽  
Chengbin Jing ◽  
...  

The phase transition, microscopic morphology and optical and ferroelectric properties are studied in a series of La- and Co-doped KNbO3-based ceramics. The results show that the doping induces the transformation from the orthorhombic to the cubic phase of KNbO3, significantly reduces the optical bandgap and simultaneously evidently improves the leakage, with a slight weakening of ferroelectric polarization. Further analysis reveals that (i) the Co doping is responsible for the obvious reduction of the bandgap, whereas it is reversed for the La doping; (ii) the slight deterioration of ferroelectricity is due to the doping-induced remarkable extrinsic defect levels and intrinsic oxygen vacancies; and (iii) the La doping can optimize the defect levels and inhibit the leakage. This investigation should both provide novel insight for exploring the bandgap engineering and ferroelectric properties of KNbO3, and suggest its potential applications, e.g., photovoltaic and multifunctional materials.


2021 ◽  
Vol 104 (11) ◽  
Author(s):  
Bibo Lou ◽  
Jun Wen ◽  
Lixin Ning ◽  
Min Yin ◽  
Chong-Geng Ma ◽  
...  

2021 ◽  
Vol 104 (6) ◽  
Author(s):  
Tomáš Rauch ◽  
Francisco Munoz ◽  
Miguel A. L. Marques ◽  
Silvana Botti

Author(s):  
Yasa Sampurno ◽  
Ara Philipossian ◽  
Abigail N Linhart ◽  
Katherine M Wortman-Otto ◽  
Wei-Tsu Tseng ◽  
...  
Keyword(s):  

2021 ◽  
pp. 413087
Author(s):  
P. Muhammed Shafi ◽  
Evan Kurian ◽  
Nikhitha Joseph ◽  
Selvakumar Sellaiyan ◽  
Akira Uedono ◽  
...  

2021 ◽  
Author(s):  
Emmanuel Igumbor ◽  
Okikiola Olaniyan ◽  
Guy Moise Dongho-Nguimdo ◽  
Edwin Mapasha ◽  
Sohail Ahmad ◽  
...  

Author(s):  
Qian Yue ◽  
Wei Gao ◽  
Peiting Wen ◽  
Quan Chen ◽  
Mengmeng Yang ◽  
...  

Because of the in-gap defect levels, high deep ultraviolet (DUV) light absorption and low leakage current, the incorporation of 4H-silicon carbide (SiC) substrate has been confirmed to enhance the optoelectrical...


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