Conference Proceedings. 14th Indium Phosphide and Related Materials Conference (Cat. No.02CH37307)

Highly uniform 4-inch diameter ingaas/inp epitaxial wafer for pin-pd application

Conference Proceedings. 14th Indium Phosphide and Related Materials Conference (Cat. No.02CH37307) ◽

10.1109/iciprm.2002.1014588 ◽

2005 ◽

Author(s):

H. Doi ◽

Y. Iguchi ◽

H. Kimura ◽

T. Iwasaki ◽

Y. Mirua ◽

...

Keyword(s):

Highly Uniform

Download Full-text

Low noise characteristics of double-doped In/sub 0.52/Al/sub 0.48/As/In/sub 0.53/Ga/sub 0.47/As power metamorphic HEMT on GaAs substrate with wide head T-shaped gate

Conference Proceedings. 14th Indium Phosphide and Related Materials Conference (Cat. No.02CH37307) ◽

10.1109/iciprm.2002.1014311 ◽

2003 ◽

Cited By ~ 2

Author(s):

Hyung Sup Yoon ◽

Jin Hee Lee ◽

Jae Yeob Shim ◽

Seong Jin Kim ◽

Dong Min Kang ◽

...

Keyword(s):

Gaas Substrate ◽

Low Noise ◽

Noise Characteristics

Download Full-text

Box-like filter response of triple ring resonators with integrated SOA sections based on GaInAsP/InP

Conference Proceedings. 14th Indium Phosphide and Related Materials Conference (Cat. No.02CH37307) ◽

10.1109/iciprm.2002.1014472 ◽

2003 ◽

Cited By ~ 2

Author(s):

D.G. Rabus ◽

M. Hamacher ◽

H. Heidrich ◽

U. Troppenz

Keyword(s):

Ring Resonators ◽

Filter Response

Download Full-text

0.1 μm InP HEMT devices and MMICs for cryogenic low noise amplifiers from X-band to W-band

Conference Proceedings. 14th Indium Phosphide and Related Materials Conference (Cat. No.02CH37307) ◽

10.1109/iciprm.2002.1014466 ◽

2003 ◽

Cited By ~ 21

Author(s):

R. Grundbacher ◽

R. Lai ◽

M. Barsky ◽

R. Tsai ◽

T. Gaier ◽

...

Keyword(s):

Low Noise ◽

Low Noise Amplifiers ◽

W Band ◽

X Band ◽

Inp Hemt

Download Full-text

High-performance all-active tapered 1550 nm InGaAsP-BH-FP lasers

Conference Proceedings. 14th Indium Phosphide and Related Materials Conference (Cat. No.02CH37307) ◽

10.1109/iciprm.2002.1014085 ◽

2003 ◽

Cited By ~ 1

Author(s):

M. Mohrle ◽

H. Roehle ◽

A. Sigmund ◽

A. Suna ◽

F. Reier

Keyword(s):

High Performance

Download Full-text

The c-axis and a-axis orientations in InN grown directly on (0001) sapphire substrate by rf-MBE

Conference Proceedings. 14th Indium Phosphide and Related Materials Conference (Cat. No.02CH37307) ◽

10.1109/iciprm.2002.1014593 ◽

2003 ◽

Cited By ~ 2

Author(s):

T. Yamaguchi ◽

Y. Saito ◽

K. Kano ◽

I. Araki ◽

N. Teraguchi ◽

...

Keyword(s):

Sapphire Substrate

Download Full-text

InP-based HEMT technologies toward 100 Gbit/s ICs

Conference Proceedings. 14th Indium Phosphide and Related Materials Conference (Cat. No.02CH37307) ◽

10.1109/iciprm.2002.1014462 ◽

2003 ◽

Cited By ~ 6

Author(s):

T. Enoki

Download Full-text

Innovative nitride passivation of 0.1 μm InGaAs/InAlAs/InP HEMTs using high-density inductively coupled plasma CVD (HD-ICP-CVD)

Conference Proceedings. 14th Indium Phosphide and Related Materials Conference (Cat. No.02CH37307) ◽

10.1109/iciprm.2002.1014392 ◽

2003 ◽

Author(s):

Y.C. Chou ◽

R. Lai ◽

G.P. Li ◽

P. Nam ◽

R. Grundbacher ◽

...

Keyword(s):

Inductively Coupled Plasma ◽

High Density ◽

Plasma Cvd ◽

Inductively Coupled

Download Full-text

InP/GaAsSb and (Al,Ga)InAs/GaAsSb DHBT material grown in a 4 inches multiwafer MBE machine

Conference Proceedings. 14th Indium Phosphide and Related Materials Conference (Cat. No.02CH37307) ◽

10.1109/iciprm.2002.1014501 ◽

2003 ◽

Cited By ~ 3

Author(s):

P. Bove ◽

H. Lahrche ◽

R. Langer

Download Full-text

High-power high-efficiency superluminescent diodes with J-shaped ridge waveguide structure

Conference Proceedings. 14th Indium Phosphide and Related Materials Conference (Cat. No.02CH37307) ◽

10.1109/iciprm.2002.1014143 ◽

2003 ◽

Cited By ~ 2

Author(s):

J.-H. Liang ◽

T. Maruyama ◽

Y. Ogawa ◽

S. Kobayashi ◽

J. Sonoda ◽

...

Keyword(s):

High Power ◽

High Efficiency ◽

Ridge Waveguide ◽

Waveguide Structure ◽

Superluminescent Diodes ◽

Ridge Waveguide Structure

Download Full-text

Conference Proceedings. 14th Indium Phosphide and Related Materials Conference (Cat. No.02CH37307)
Latest Publications

TOTAL DOCUMENTS

H-INDEX

Published By IEEE

Highly uniform 4-inch diameter ingaas/inp epitaxial wafer for pin-pd application

Low noise characteristics of double-doped In/sub 0.52/Al/sub 0.48/As/In/sub 0.53/Ga/sub 0.47/As power metamorphic HEMT on GaAs substrate with wide head T-shaped gate

Box-like filter response of triple ring resonators with integrated SOA sections based on GaInAsP/InP

0.1 μm InP HEMT devices and MMICs for cryogenic low noise amplifiers from X-band to W-band

High-performance all-active tapered 1550 nm InGaAsP-BH-FP lasers

The c-axis and a-axis orientations in InN grown directly on (0001) sapphire substrate by rf-MBE

InP-based HEMT technologies toward 100 Gbit/s ICs

Innovative nitride passivation of 0.1 μm InGaAs/InAlAs/InP HEMTs using high-density inductively coupled plasma CVD (HD-ICP-CVD)

InP/GaAsSb and (Al,Ga)InAs/GaAsSb DHBT material grown in a 4 inches multiwafer MBE machine

High-power high-efficiency superluminescent diodes with J-shaped ridge waveguide structure

Export Citation Format

Conference Proceedings. 14th Indium Phosphide and Related Materials Conference (Cat. No.02CH37307)Latest Publications

TOTAL DOCUMENTS

H-INDEX

Published By IEEE

Highly uniform 4-inch diameter ingaas/inp epitaxial wafer for pin-pd application

Low noise characteristics of double-doped In/sub 0.52/Al/sub 0.48/As/In/sub 0.53/Ga/sub 0.47/As power metamorphic HEMT on GaAs substrate with wide head T-shaped gate

Box-like filter response of triple ring resonators with integrated SOA sections based on GaInAsP/InP

0.1 μm InP HEMT devices and MMICs for cryogenic low noise amplifiers from X-band to W-band

High-performance all-active tapered 1550 nm InGaAsP-BH-FP lasers

The c-axis and a-axis orientations in InN grown directly on (0001) sapphire substrate by rf-MBE

InP-based HEMT technologies toward 100 Gbit/s ICs

Innovative nitride passivation of 0.1 μm InGaAs/InAlAs/InP HEMTs using high-density inductively coupled plasma CVD (HD-ICP-CVD)

InP/GaAsSb and (Al,Ga)InAs/GaAsSb DHBT material grown in a 4 inches multiwafer MBE machine

High-power high-efficiency superluminescent diodes with J-shaped ridge waveguide structure

Conference Proceedings. 14th Indium Phosphide and Related Materials Conference (Cat. No.02CH37307)
Latest Publications