Conference Proceedings 1997 International Conference on Indium Phosphide and Related Materials ICIPRM-97
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TOTAL DOCUMENTS

176

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Published By IEEE

0780338987

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InP based materials for long wavelength optoelectronics grown in multiwafer planetary reactors

Conference Proceedings 1997 International Conference on Indium Phosphide and Related Materials ICIPRM-97 ◽

10.1109/iciprm.1997.600152 ◽

2005 ◽

Author(s):

R. Beccard ◽

D. Schmitz ◽

M. Deufel ◽

H. Protzmann ◽

H. Jurgensen

Keyword(s):

Long Wavelength

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High-speed InGaAs-based vertical Schottky barrier photodetectors

Conference Proceedings 1997 International Conference on Indium Phosphide and Related Materials ICIPRM-97 ◽

10.1109/iciprm.1997.600202 ◽

2002 ◽

Author(s):

W. Wohlmuth ◽

J.-W. Seo ◽

P. Pay ◽

C. Caneau ◽

I. Adesida

Keyword(s):

Schottky Barrier ◽

High Speed

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Rapid thermal MOCVD of InGaAs/InP multilayers

Conference Proceedings 1997 International Conference on Indium Phosphide and Related Materials ICIPRM-97 ◽

10.1109/iciprm.1997.600138 ◽

2002 ◽

Cited By ~ 1

Author(s):

O. Kreinin ◽

G. Bahir

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Butt-coupled waveguide-modulators by low temperature embedded CBE regrowth for high speed modulation (42 GHz) or large extinction ratio (<50 db)

Conference Proceedings 1997 International Conference on Indium Phosphide and Related Materials ICIPRM-97 ◽

10.1109/iciprm.1997.600245 ◽

2002 ◽

Cited By ~ 2

Author(s):

F. Alexandre ◽

D. Jahan ◽

F. Devaux ◽

A. Ougazzaden ◽

F. Huet ◽

...

Keyword(s):

Low Temperature ◽

High Speed ◽

Extinction Ratio ◽

Speed Modulation ◽

Waveguide Modulators ◽

High Speed Modulation

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Improvement of the surface quality of polished InP wafers

Conference Proceedings 1997 International Conference on Indium Phosphide and Related Materials ICIPRM-97 ◽

10.1109/iciprm.1997.600183 ◽

2002 ◽

Author(s):

G. Jacob ◽

P. Regreny ◽

N. Thomas ◽

H. Hardtdegen

Keyword(s):

Surface Quality

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Two-section InGaAsP DBR-lasers at 1.55 μm wavelength with 31 GHz direct modulation bandwidth

Conference Proceedings 1997 International Conference on Indium Phosphide and Related Materials ICIPRM-97 ◽

10.1109/iciprm.1997.600265 ◽

2002 ◽

Cited By ~ 3

Author(s):

O. Kjebon ◽

R. Schatz ◽

S. Lourdudoss ◽

S. Nilsson ◽

B. Stalnacke ◽

...

Keyword(s):

Modulation Bandwidth ◽

Direct Modulation ◽

Dbr Lasers

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Mechanism and structural dependence of kink phenomena in InAlAs/InGaAs HEMTs

Conference Proceedings 1997 International Conference on Indium Phosphide and Related Materials ICIPRM-97 ◽

10.1109/iciprm.1997.600160 ◽

2002 ◽

Cited By ~ 9

Author(s):

T. Suemitsu ◽

T. Enoki ◽

M. Tomizawa ◽

N. Shigekawa ◽

Y. Ishii

Keyword(s):

Structural Dependence

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Fe distribution around hydride VPE InP:Fe regrown laser stripes

Conference Proceedings 1997 International Conference on Indium Phosphide and Related Materials ICIPRM-97 ◽

10.1109/iciprm.1997.600027 ◽

2002 ◽

Cited By ~ 1

Author(s):

R. Gobel ◽

H. Janning ◽

H. Burkhard

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Demonstration of nitrogen carrier gas in MOVPE for InP/InGaAs-based high frequency and optoelectronic integrated devices

Conference Proceedings 1997 International Conference on Indium Phosphide and Related Materials ICIPRM-97 ◽

10.1109/iciprm.1997.600142 ◽

2002 ◽

Author(s):

H. Hardtdegen ◽

M. Marso ◽

M. Horstmann ◽

K. Schimpf ◽

M. Sommer ◽

...

Keyword(s):

High Frequency ◽

Carrier Gas ◽

Integrated Devices

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Drain engineering in AlInAs/GaInAs HEMTs for high f/sub τ/ and f/sub max/

Conference Proceedings 1997 International Conference on Indium Phosphide and Related Materials ICIPRM-97 ◽

10.1109/iciprm.1997.600178 ◽

2002 ◽

Author(s):

E. Migliore ◽

P. Chavarkar ◽

J. Yen ◽

U.K. Mishra ◽

M.V. Fischetti ◽

...

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Conference Proceedings 1997 International Conference on Indium Phosphide and Related Materials ICIPRM-97Latest Publications

TOTAL DOCUMENTS

H-INDEX

Published By IEEE

InP based materials for long wavelength optoelectronics grown in multiwafer planetary reactors

High-speed InGaAs-based vertical Schottky barrier photodetectors

Rapid thermal MOCVD of InGaAs/InP multilayers

Butt-coupled waveguide-modulators by low temperature embedded CBE regrowth for high speed modulation (42 GHz) or large extinction ratio (<50 db)

Improvement of the surface quality of polished InP wafers

Two-section InGaAsP DBR-lasers at 1.55 μm wavelength with 31 GHz direct modulation bandwidth

Mechanism and structural dependence of kink phenomena in InAlAs/InGaAs HEMTs

Fe distribution around hydride VPE InP:Fe regrown laser stripes

Demonstration of nitrogen carrier gas in MOVPE for InP/InGaAs-based high frequency and optoelectronic integrated devices

Drain engineering in AlInAs/GaInAs HEMTs for high f/sub τ/ and f/sub max/

Conference Proceedings 1997 International Conference on Indium Phosphide and Related Materials ICIPRM-97
Latest Publications