2008 IEEE International Conference on Electron Devices and Solid-State Circuits
Latest Publications

TOTAL DOCUMENTS

125

(FIVE YEARS 0)

H-INDEX

(FIVE YEARS 0)

Published By IEEE

9781424425396

Latest Documents Most Cited Documents Contributed Authors Related Sources Related Keywords

GaN Schottky barrier photodetectors with multi-MgN/GaN buffer

2008 IEEE International Conference on Electron Devices and Solid-State Circuits ◽

10.1109/edssc.2008.4760683 ◽

2008 ◽

Author(s):

K. H. Lee ◽

P. C. Chang ◽

S. J. Chang ◽

Y. C. Wang ◽

C. H. Kuo ◽

...

Keyword(s):

Schottky Barrier

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SPRAM (SPin-transfer torque RAM) Technology for Green IT World

2008 IEEE International Conference on Electron Devices and Solid-State Circuits ◽

10.1109/edssc.2008.4760631 ◽

2008 ◽

Cited By ~ 5

Author(s):

T. Kawahara ◽

H. Takahashi ◽

H. Ohno

Keyword(s):

Spin Transfer Torque ◽

Spin Transfer ◽

Green It

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Effective channel length increased due to switching from ≪110≫ to ≪100≫ orientation for PMOS transistors fabricated by 65 nm CMOS technology

2008 IEEE International Conference on Electron Devices and Solid-State Circuits ◽

10.1109/edssc.2008.4760686 ◽

2008 ◽

Cited By ~ 1

Author(s):

W.S. Lau ◽

Peizhen Yang ◽

V. Ho ◽

B.K. Lim ◽

S.Y. Siah ◽

...

Keyword(s):

Cmos Technology ◽

Channel Length ◽

Effective Channel

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Effects of uniaxial strain on the gate capacitance of double gate MOSFETs

2008 IEEE International Conference on Electron Devices and Solid-State Circuits ◽

10.1109/edssc.2008.4760706 ◽

2008 ◽

Author(s):

Md. Itrat Bin Shams ◽

Md. Kawsar Alam ◽

Quazi D. M. Khosru

Keyword(s):

Uniaxial Strain ◽

Double Gate ◽

Gate Capacitance

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Polysilicon nanowire chemical sensor based on CMOS standard process

2008 IEEE International Conference on Electron Devices and Solid-State Circuits ◽

10.1109/edssc.2008.4760705 ◽

2008 ◽

Author(s):

C.-W. Huang ◽

S.-C. Hsu ◽

C.-T. Lin

Keyword(s):

Chemical Sensor ◽

Standard Process

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Study of degradation and breakdown properties of HfO2 dielectric by c-AFM and SSPM

2008 IEEE International Conference on Electron Devices and Solid-State Circuits ◽

10.1109/edssc.2008.4760733 ◽

2008 ◽

Author(s):

J. An ◽

K. Xue ◽

J. B. Xu

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Resonant MEMS sensors for detection of aqueous heavy metal ions with Sub-ppm resolution

2008 IEEE International Conference on Electron Devices and Solid-State Circuits ◽

10.1109/edssc.2008.4760702 ◽

2008 ◽

Cited By ~ 1

Author(s):

Amir Rahafrooz ◽

Siavash Pourkamali

Keyword(s):

Heavy Metal ◽

Metal Ions ◽

Heavy Metal Ions ◽

Mems Sensors

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GaN photodetectors prepared on silicon and sapphire substrates

2008 IEEE International Conference on Electron Devices and Solid-State Circuits ◽

10.1109/edssc.2008.4760697 ◽

2008 ◽

Cited By ~ 1

Author(s):

S. P. Chang ◽

S. J. Chang ◽

C. Y. Lu ◽

R. W. Chuang

Keyword(s):

Sapphire Substrates

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Modeling of avalanche gain for high-speed InP/InGaAs avalanche photodiodes

2008 IEEE International Conference on Electron Devices and Solid-State Circuits ◽

10.1109/edssc.2008.4760679 ◽

2008 ◽

Cited By ~ 2

Author(s):

J. K. Park ◽

I. Yun

Keyword(s):

High Speed ◽

Avalanche Photodiodes ◽

Avalanche Gain

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A 1-V 190-μW Delta-Sigma Audio ADC in 0.13-μm full digital CMOS techonology

2008 IEEE International Conference on Electron Devices and Solid-State Circuits ◽

10.1109/edssc.2008.4760650 ◽

2008 ◽

Author(s):

Zhenglin Yang ◽

Libin Yao

Keyword(s):

Digital Cmos ◽

Delta Sigma

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2008 IEEE International Conference on Electron Devices and Solid-State CircuitsLatest Publications

TOTAL DOCUMENTS

H-INDEX

Published By IEEE

GaN Schottky barrier photodetectors with multi-MgN/GaN buffer

SPRAM (SPin-transfer torque RAM) Technology for Green IT World

Effective channel length increased due to switching from ≪110≫ to ≪100≫ orientation for PMOS transistors fabricated by 65 nm CMOS technology

Effects of uniaxial strain on the gate capacitance of double gate MOSFETs

Polysilicon nanowire chemical sensor based on CMOS standard process

Study of degradation and breakdown properties of HfO2 dielectric by c-AFM and SSPM

Resonant MEMS sensors for detection of aqueous heavy metal ions with Sub-ppm resolution

GaN photodetectors prepared on silicon and sapphire substrates

Modeling of avalanche gain for high-speed InP/InGaAs avalanche photodiodes

A 1-V 190-μW Delta-Sigma Audio ADC in 0.13-μm full digital CMOS techonology

2008 IEEE International Conference on Electron Devices and Solid-State Circuits
Latest Publications