2021 33rd International Symposium on Power Semiconductor Devices and ICs (ISPSD)
Latest Publications

TOTAL DOCUMENTS

109

(FIVE YEARS 109)

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(FIVE YEARS 0)

Published By IEEE

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Schedule at a Glance

2021 33rd International Symposium on Power Semiconductor Devices and ICs (ISPSD) ◽

10.23919/ispsd50666.2021.9452237 ◽

2021 ◽

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2021 33rd International Symposium on Power Semiconductor Devices and ICs (ISPSD) ◽

10.23919/ispsd50666.2021.9452293 ◽

2021 ◽

Keyword(s):

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[ISPSD 2021 Front cover]

2021 33rd International Symposium on Power Semiconductor Devices and ICs (ISPSD) ◽

10.23919/ispsd50666.2021.9452292 ◽

2021 ◽

Keyword(s):

Front Cover

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Experimental of Folded Accumulation Lateral Double-diffused Transistor with Low Specific On Resistance

2021 33rd International Symposium on Power Semiconductor Devices and ICs (ISPSD) ◽

10.23919/ispsd50666.2021.9452249 ◽

2021 ◽

Author(s):

Yandong Wang ◽

Baoxing Duan ◽

Yintang Yang

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Study of Unique ESD Tolerance Dependence on Backgate Ratio for RESURF LDMOS with Rated Voltage Variation

2021 33rd International Symposium on Power Semiconductor Devices and ICs (ISPSD) ◽

10.23919/ispsd50666.2021.9452267 ◽

2021 ◽

Author(s):

Kanako Komatsu ◽

Koichi Ozaki ◽

Fumio Takeuchi ◽

Daisuke Shinohara ◽

Tomoko Kinoshita ◽

...

Keyword(s):

Voltage Variation

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1.2 kV 4H-SiC VDMOSFETs with Si-implanted Surface: Performance Enhancement and Reliability Evaluation

2021 33rd International Symposium on Power Semiconductor Devices and ICs (ISPSD) ◽

10.23919/ispsd50666.2021.9452284 ◽

2021 ◽

Author(s):

J.-W. Hu ◽

J.-Y. Jiang ◽

P.-W. Huang ◽

C.-F. Huang ◽

S.-W. Tang ◽

...

Keyword(s):

Performance Enhancement ◽

Reliability Evaluation ◽

Surface Performance

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Benchmarking of Digital Gate Driven IGBTs: New Eoff-Vsurge Trade-off Approach

2021 33rd International Symposium on Power Semiconductor Devices and ICs (ISPSD) ◽

10.23919/ispsd50666.2021.9452197 ◽

2021 ◽

Author(s):

Kouji Harasaki ◽

Masanori Tsukuda ◽

Ichiro Omura

Keyword(s):

Trade Off

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Mitigation of Space-Charge-Modulation in 800-V JFET for HV Start-up Circuit Toward High ON-BV Performance

2021 33rd International Symposium on Power Semiconductor Devices and ICs (ISPSD) ◽

10.23919/ispsd50666.2021.9452251 ◽

2021 ◽

Author(s):

Zhangyi'an Yuan ◽

Xinjian Li ◽

Ming Qiao ◽

Zhao Wang ◽

Ying Cai ◽

...

Keyword(s):

Space Charge ◽

Start Up ◽

Charge Modulation

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A Smart Gate Driver for SiC Power MOSFETs with Aging Compensation and Ringing Suppression

2021 33rd International Symposium on Power Semiconductor Devices and ICs (ISPSD) ◽

10.23919/ispsd50666.2021.9452261 ◽

2021 ◽

Author(s):

Mengqi Wang ◽

Wei Jia Zhang ◽

Jingyuan Liang ◽

Wen Tao Cui ◽

Wai Tung Ng ◽

...

Keyword(s):

Power Mosfets ◽

Gate Driver

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2021 33rd International Symposium on Power Semiconductor Devices and ICs (ISPSD)
Latest Publications

TOTAL DOCUMENTS

H-INDEX

Published By IEEE

Schedule at a Glance

Sponsors

[Copyright notice]

[ISPSD 2021 Front cover]

Experimental of Folded Accumulation Lateral Double-diffused Transistor with Low Specific On Resistance

Study of Unique ESD Tolerance Dependence on Backgate Ratio for RESURF LDMOS with Rated Voltage Variation

1.2 kV 4H-SiC VDMOSFETs with Si-implanted Surface: Performance Enhancement and Reliability Evaluation

Benchmarking of Digital Gate Driven IGBTs: New Eoff-Vsurge Trade-off Approach

Mitigation of Space-Charge-Modulation in 800-V JFET for HV Start-up Circuit Toward High ON-BV Performance

A Smart Gate Driver for SiC Power MOSFETs with Aging Compensation and Ringing Suppression

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2021 33rd International Symposium on Power Semiconductor Devices and ICs (ISPSD)Latest Publications

TOTAL DOCUMENTS

H-INDEX

Published By IEEE

Schedule at a Glance

Sponsors

[Copyright notice]

[ISPSD 2021 Front cover]

Experimental of Folded Accumulation Lateral Double-diffused Transistor with Low Specific On Resistance

Study of Unique ESD Tolerance Dependence on Backgate Ratio for RESURF LDMOS with Rated Voltage Variation

1.2 kV 4H-SiC VDMOSFETs with Si-implanted Surface: Performance Enhancement and Reliability Evaluation

Benchmarking of Digital Gate Driven IGBTs: New Eoff-Vsurge Trade-off Approach

Mitigation of Space-Charge-Modulation in 800-V JFET for HV Start-up Circuit Toward High ON-BV Performance

A Smart Gate Driver for SiC Power MOSFETs with Aging Compensation and Ringing Suppression

2021 33rd International Symposium on Power Semiconductor Devices and ICs (ISPSD)
Latest Publications