ICSE 2000. 2000 IEEE International Conference on Semiconductor Electronics. Proceedings (Cat. No.00EX425)

2002 ◽

Author(s):

A. Omar ◽

I. Ahmad ◽

A.J. Alias

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Design and characteristics of four-channel 1200 GHz spacing 1550 nm WDM device using cascaded directional couplers

ICSE 2000. 2000 IEEE International Conference on Semiconductor Electronics. Proceedings (Cat. No.00EX425) ◽

10.1109/smelec.2000.932473 ◽

2002 ◽

Author(s):

S. Shaari ◽

K.S. Leong ◽

O.C. Siah

Keyword(s):

Directional Couplers

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Modeling and characterization of HDTMOS power technology

ICSE 2000. 2000 IEEE International Conference on Semiconductor Electronics. Proceedings (Cat. No.00EX425) ◽

10.1109/smelec.2000.932308 ◽

2002 ◽

Author(s):

Z. Hossain ◽

P. Venkatraman ◽

S. Sundaram

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Poly(4,4'-diphenylene diphenylvinylene) Langmuir Blodgett thin films as a hole transport layer in polymer light emitting diode

ICSE 2000. 2000 IEEE International Conference on Semiconductor Electronics. Proceedings (Cat. No.00EX425) ◽

10.1109/smelec.2000.932327 ◽

2002 ◽

Author(s):

Mursyidah ◽

M.M. Salleh ◽

M. Yahaya ◽

R. Daik ◽

H.P. Ooi

Keyword(s):

Thin Films ◽

Light Emitting Diode ◽

Hole Transport ◽

Transport Layer ◽

Hole Transport Layer ◽

Light Emitting ◽

Langmuir Blodgett ◽

Polymer Light Emitting Diode

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Characterization of tin (IV) oxide based semiconductor elements for electronic detection of methane

ICSE 2000. 2000 IEEE International Conference on Semiconductor Electronics. Proceedings (Cat. No.00EX425) ◽

10.1109/smelec.2000.932311 ◽

2002 ◽

Cited By ~ 1

Author(s):

J.O. Dennis ◽

M.K. Saidin ◽

M.M. Abd Karim ◽

M.R. Sahar

Keyword(s):

Electronic Detection

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Failure analysis and elimination of poly residues contamination in wafer fabrication

ICSE 2000. 2000 IEEE International Conference on Semiconductor Electronics. Proceedings (Cat. No.00EX425) ◽

10.1109/smelec.2000.932305 ◽

2002 ◽

Author(s):

E.C. Low ◽

L.H. An ◽

Y.N. Hua ◽

Yogaspari

Keyword(s):

Failure Analysis ◽

Wafer Fabrication

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Optical sensing of tea aroma using n-tetraphenyl porphine manganese (III) chloride thin films

ICSE 2000. 2000 IEEE International Conference on Semiconductor Electronics. Proceedings (Cat. No.00EX425) ◽

10.1109/smelec.2000.932306 ◽

2002 ◽

Author(s):

Akrajas ◽

M.M. Salleh ◽

M. Yahaya

Keyword(s):

Thin Films ◽

Optical Sensing

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An efficient architecture of 8-bit CMOS analog-to-digital converter

ICSE 2000. 2000 IEEE International Conference on Semiconductor Electronics. Proceedings (Cat. No.00EX425) ◽

10.1109/smelec.2000.932459 ◽

2002 ◽

Author(s):

P.B.Y. Tan ◽

S.B. Suparjo ◽

R. Wagiran ◽

R. Sidek

Keyword(s):

Analog To Digital Converter ◽

Digital Converter ◽

Analog To Digital

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Process variation during tunnel window formation and its impact on the reliability performance of FLOTOX EEPROM devices

ICSE 2000. 2000 IEEE International Conference on Semiconductor Electronics. Proceedings (Cat. No.00EX425) ◽

10.1109/smelec.2000.932462 ◽

2002 ◽

Author(s):

Kah-Keen Lai ◽

Peng-Soon Lim ◽

Wai-Kin Chim ◽

Yang Pan

Keyword(s):

Process Variation ◽

Reliability Performance

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Dielectric properties of a superlattice containing a linear copolysiloxane substituted with aromatic acid side chains Langmuir-Blodgett films

ICSE 2000. 2000 IEEE International Conference on Semiconductor Electronics. Proceedings (Cat. No.00EX425) ◽

10.1109/smelec.2000.932301 ◽

2002 ◽

Author(s):

W.H.A. Majid ◽

T.H. Richardson

Keyword(s):

Dielectric Properties ◽

Aromatic Acid ◽

Side Chains ◽

Langmuir Blodgett ◽

Langmuir Blodgett Films

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ICSE 2000. 2000 IEEE International Conference on Semiconductor Electronics. Proceedings (Cat. No.00EX425)
Latest Publications

TOTAL DOCUMENTS

H-INDEX

Published By IEEE

Electrical and microstructures properties of polygate electrode in 0.5 μm CMOS devices

Design and characteristics of four-channel 1200 GHz spacing 1550 nm WDM device using cascaded directional couplers

Modeling and characterization of HDTMOS power technology

Poly(4,4'-diphenylene diphenylvinylene) Langmuir Blodgett thin films as a hole transport layer in polymer light emitting diode

Characterization of tin (IV) oxide based semiconductor elements for electronic detection of methane

Failure analysis and elimination of poly residues contamination in wafer fabrication

Optical sensing of tea aroma using n-tetraphenyl porphine manganese (III) chloride thin films

An efficient architecture of 8-bit CMOS analog-to-digital converter

Process variation during tunnel window formation and its impact on the reliability performance of FLOTOX EEPROM devices

Dielectric properties of a superlattice containing a linear copolysiloxane substituted with aromatic acid side chains Langmuir-Blodgett films

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ICSE 2000. 2000 IEEE International Conference on Semiconductor Electronics. Proceedings (Cat. No.00EX425)Latest Publications

TOTAL DOCUMENTS

H-INDEX

Published By IEEE

Electrical and microstructures properties of polygate electrode in 0.5 μm CMOS devices

Design and characteristics of four-channel 1200 GHz spacing 1550 nm WDM device using cascaded directional couplers

Modeling and characterization of HDTMOS power technology

Poly(4,4'-diphenylene diphenylvinylene) Langmuir Blodgett thin films as a hole transport layer in polymer light emitting diode

Characterization of tin (IV) oxide based semiconductor elements for electronic detection of methane

Failure analysis and elimination of poly residues contamination in wafer fabrication

Optical sensing of tea aroma using n-tetraphenyl porphine manganese (III) chloride thin films

An efficient architecture of 8-bit CMOS analog-to-digital converter

Process variation during tunnel window formation and its impact on the reliability performance of FLOTOX EEPROM devices

Dielectric properties of a superlattice containing a linear copolysiloxane substituted with aromatic acid side chains Langmuir-Blodgett films

ICSE 2000. 2000 IEEE International Conference on Semiconductor Electronics. Proceedings (Cat. No.00EX425)
Latest Publications