ChemInform Abstract: Gas Phase Reactions. Part 81. Surface Reactions. Part 15. SiI2, a Novel Tri-Atomic Molecule with Relativistic Touch.

ChemInform ◽  
2010 ◽  
Vol 22 (45) ◽  
pp. no-no
Author(s):  
H. BOCK ◽  
M. KREMER ◽  
M. DOLG ◽  
H.-W. PREUSS
1988 ◽  
Vol 131 ◽  
Author(s):  
Thomas R. Omstead ◽  
Penny M. Van Sickle ◽  
Klavs F. Jensen

ABSTRACTThe growth of GaAs from triethylgallium (TEG) and trimethylgallium (TMG) with tertiarybutylarsine (tBAs), triethylarsenic (TEAs), and trimethylarsenic (TMAs), has been investigated by using a reactor equipped with a recording microbalance for in situ rate measurements. Rate data show that the growth with these precursors is dominated by the formation of adduct compounds in the gas lines, by adduct related parasitic gas phase reactions in the heated zone, and by the surface reactions. A model is proposed for the competition between deposition reactions and the parasitic gas phase reactions. Model predictions are in very good agreement with experimental data for all combinations of precursors except for TEG/TMAs where extensive gallium droplet formation is observed at low temperatures. Growth of reasonable quality GaAs with Hall mobilities of 7600 cm2/Vs at 77 K using TEG and tBAs is reported for the first time.


Author(s):  
Azad Qazi Zade ◽  
Metin Renksizbulut ◽  
Jacob Friedman

Gas phase reaction effects in the catalytic oxidation of hydrogen on platinum-coated minichannels and microchannels are investigated numerically in planar geometry. The main objective of this work is to identify the relative importance of the gas phase and surface reactions under different operating conditions. A collocated finite-volume method is used to solve the governing equations. Detailed gas phase and surface reaction mechanisms along with a multi-component diffusion model are used. As the channel size is reduced, heat and radical losses to the walls can significantly alter the combustion behavior. While catalytic walls help in sustaining the gas phase reactions at very small length scales by reducing the heat losses to the walls owing to heat release associated with the surface reactions, they may inhibit homogeneous reactions by extracting radicals due to typically high absorption rates of such species at the walls. Thus, the radical chain mechanisms can be significantly altered by the presence of wall reactions, and the build-up of radical pools in the gas phase, which lead to homogeneous ignition, can be suppressed as a consequence. In the present study, the effects of two key parameters, i.e. channel height and the inlet mass flux on the interaction of gas phase and surface reactions will be explored. In each case, the limiting values beyond which the gas-phase reactions become relatively negligible compared to surface reactions will be identified for hydrogen/air mixtures.


1989 ◽  
Vol 145 ◽  
Author(s):  
Klavs F. Jensen ◽  
Triantafillos J. Mountziaris ◽  
Dimitrios I. Fotiadis

AbstractA kinetic model for metalorganic vapor phase epitaxy (MOVPE) of GaAs from trimethylgallium and arsine is imbedded into two-dimensional transport phenomena descriptions of horizontal and vertical MOVPE reactors. The mechanism involves 15 gas-phase species, 17 gas-phase reactions, 9 surface species and 26 surface reactions. The surface reactions take into account different crystallographic orientations of the GaAs substrate. Carbon incorporation is predicted to occur via carbene containing species. A sensitivity analysis shows that only a few reactions are needed to simulate observed growth rates while the full mechanism is important in computing carbon levels in GaAs. The model predictions are in good agreement with data for trimethylgallium decomposition in hot isothermal tubes, with GaAs growth in horizontal reactors, and with carbon incorporation in vertical reactors. The transport-reaction model demonstrates that both gas-phase and surface reactions as well as transport phenomena are important in predicting MOVPE reactor performance.


2000 ◽  
Vol 197 ◽  
pp. 71-80
Author(s):  
Michiel R. Hogerheijde

Based on theoretical considerations, the chemistry around embedded young stellar objects is expected to be governed by the interplay between gas-phase reactions, condensation of molecules onto dust grains, grain surface reactions, and evaporation of altered ice mantles near the star and in the outflow. I discuss the chemical characteristics of embedded young stellar objects, with special emphasis on these processes.


Author(s):  
Victor N. Kondratiev ◽  
Evgeniĭ E. Nikitin

2012 ◽  
Vol 1 (1) ◽  
pp. P46-P53 ◽  
Author(s):  
Ran Zuo ◽  
Haiqun Yu ◽  
Nan Xu ◽  
Xiaokun He

1957 ◽  
Vol 79 (17) ◽  
pp. 4609-4616 ◽  
Author(s):  
Adon A. Gordus ◽  
John E. Willard

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