scholarly journals Optimization of DC Reactive Magnetron Sputtering Deposition Process for Efficient YSZ Electrolyte Thin Film SOFC

Fuel Cells ◽  
2012 ◽  
Vol 13 (2) ◽  
pp. 279-288 ◽  
Author(s):  
H. Hidalgo ◽  
A.-L. Thomann ◽  
T. Lecas ◽  
J. Vulliet ◽  
K. Wittmann-Teneze ◽  
...  
Keyword(s):  
Thin Film ◽  
Magnetron Sputtering ◽  
Deposition Process ◽  
Reactive Magnetron Sputtering ◽  
Reactive Magnetron ◽  
Sputtering Deposition ◽  
Dc Reactive Magnetron Sputtering ◽  
Ysz Electrolyte

Growth of Anatase TiO2 Thin Film for Photokilling of Bacteria by DC Reactive Magnetron Sputtering Technique

2013 ◽  
Vol 770 ◽  
pp. 173-176 ◽  
Author(s):  
Suree Tongwanichniyom ◽  
Wichian Siriprom ◽  
Dhonluck Manop ◽  
Adisorn Buranawong ◽  
Jakrapong Kaewkhao ◽  
...  
Keyword(s):  
Thin Film ◽  
Crystal Structure ◽  
Magnetron Sputtering ◽  
Gas Flow ◽  
Uv Light ◽  
Grazing Incidence ◽  
Reactive Magnetron Sputtering ◽  
Reactive Magnetron ◽  
Force Microscopy ◽  
Dc Reactive Magnetron Sputtering

Titanium dioxide (TiO2) thin films have been deposited on Si-wafer and glass slide by DC reactive magnetron sputtering technique at different O2 gas flow rates. The crystal structure was characterized by grazing-incidence X-ray diffraction (GIXRD), surface morphology was analyzed by atomic force microscopy (AFM) and disinfection of surfaces by photo catalytic oxidation with TiO2 and UV light irradiation. The results showed that, from GIXRD results, all as-deposited TiO2 films have crystal structure of TiO2 corresponding to the A(101) and A(200). AFM results showed that the film thicknesses increase from 183 nm to 238 nm with increasing of O2 gas flow rate, while the film roughness was in range of 4.8 nm to 5.9 nm. The as-deposited anatase TiO2 thin film in this work can kill the bacteria when expose to the UV light.

Preparation of WO3 Nanorods by Glancing Angle DC Reactive Magnetron Sputtering Deposition for NO2 Gas Sensing Application

2013 ◽  
Vol 770 ◽  
pp. 267-270
Author(s):  
T. Srichaiyaperk ◽  
K. Aimpanakit ◽  
M. Horprathum ◽  
S. Limwichean ◽  
C. Chananonnawathorn ◽  
...  
Keyword(s):  
Magnetron Sputtering ◽  
Gas Sensing ◽  
Operating Temperature ◽  
Fast Response ◽  
Reactive Magnetron Sputtering ◽  
Reactive Magnetron ◽  
Sputtering Deposition ◽  
Glancing Angle ◽  
Dc Reactive Magnetron Sputtering ◽  
Glad Technique

In this study, we present a tungsten trioxide (WO3) nanorods based gas sensor for NO2sensing at operating temperature range 150-350 °C in purify dry air carrier. WO3nanorods were fabricated by dc reactive magnetron sputtering with glancing angle deposition (GLAD) technique on silicon (100) wafer and alumina substrates interdigitated with gold electrode. The length of WO3nanorods was varied from 370 nm to 620 nm. As-deposited nanorods were annealed at a temperature of 400 °C in air for 1 h. The microstructure and phase structure of WO3nanorod were characterized by X-ray diffraction (XRD) and field-emission scanning electron microscopy (FE-SEM), respectively. XRD of annealed WO3nanorod showed polycrystalline phase. The WO3nanorods length 420 nm exhibit excellent NO2sensing properties with a maximum sensitivity of 360 at 250 °C operating temperature with fast response and recovery time.

An Amorphous Silicon Thin Film Transistor Fabricated at 125°C by dc Reactive Magnetron Sputtering

1996 ◽  
Vol 424 ◽  
Author(s):  
C. S. McCormick ◽  
C. E. Webe ◽  
J. R. Abelson
Keyword(s):  
Thin Film ◽  
Magnetron Sputtering ◽  
Amorphous Silicon ◽  
Thin Film Transistors ◽  
Thin Film Transistor ◽  
Reactive Magnetron Sputtering ◽  
Reactive Magnetron ◽  
Silicon Thin Film ◽  
Dc Reactive Magnetron Sputtering ◽  
Silicon Based

AbstractWe deposit hydrogenated amorphous silicon-based thin film transistors using dc reactive magnetron sputtering at a substrate temperature of 125°C, which is low enough to allow the use of plastic substrates. We characterize the structural properties of the a-Si:H channel and a-SiNx:H dielectric layers using infra-red absorption, thermal hydrogen evolution, and refractive index measurements, and evaluate the electrical quality using capacitance-voltage and leakage current measurements. Inverted staggered thin film transistors made with these layers exhibit a field effect mobility of 0.3 cm2/V-s, a Ion/Ioff ratio of 5 × 105, a sub-threshold slope of 0.8 V/decade, and a threshold voltage of 3 V.

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