Control of Oxygen Vacancies in TiO
            6
            Octahedra of Amorphous BaTiO
            3
            Thin Films with Tunable Built‐In Electric Field in
            a
            ‐BaTiO
            3
            /
            p
            ‐Si Heterojunction for Metal–Oxide–Semiconductor Applications

Jian Gu; Wei Tian; Zongrong Wang; Ning Ma; Piyi Du

doi:10.1002/pssa.201900941

Control of Oxygen Vacancies in TiO 6 Octahedra of Amorphous BaTiO 3 Thin Films with Tunable Built‐In Electric Field in a ‐BaTiO 3 / p ‐Si Heterojunction for Metal–Oxide–Semiconductor Applications

physica status solidi (a) ◽

10.1002/pssa.201900941 ◽

2020 ◽

Vol 217 (10) ◽

pp. 1900941

Author(s):

Jian Gu ◽

Wei Tian ◽

Zongrong Wang ◽

Ning Ma ◽

Piyi Du

Keyword(s):

Thin Films ◽

Electric Field ◽

Metal Oxide ◽

Oxygen Vacancies ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor

Download Full-text

Widefield multifrequency fluorescence lifetime imaging using a two‐tap complementary metal‐oxide semiconductor camera with lateral electric field charge modulators

Journal of Biophotonics ◽

10.1002/jbio.201800223 ◽

2019 ◽

Vol 12 (5) ◽

Cited By ~ 3

Author(s):

Hongtao Chen ◽

Ning Ma ◽

Keiichiro Kagawa ◽

Shoji Kawahito ◽

Michelle Digman ◽

...

Keyword(s):

Electric Field ◽

Metal Oxide ◽

Fluorescence Lifetime ◽

Complementary Metal Oxide Semiconductor ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Fluorescence Lifetime Imaging ◽

Lifetime Imaging ◽

Lateral Electric Field

Download Full-text

Topological insulator Bi2Se3 thin films as an alternative channel material in metal-oxide-semiconductor field-effect transistors

Journal of Applied Physics ◽

10.1063/1.4770324 ◽

2012 ◽

Vol 112 (12) ◽

pp. 124511 ◽

Cited By ~ 20

Author(s):

Jiwon Chang ◽

Leonard F. Register ◽

Sanjay K. Banerjee

Keyword(s):

Thin Films ◽

Metal Oxide ◽

Topological Insulator ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor

Download Full-text

Large current modulation and tunneling magnetoresistance change by a side-gate electric field in a GaMnAs-based vertical spin metal-oxide-semiconductor field-effect transistor

Scientific Reports ◽

10.1038/s41598-018-24958-z ◽

2018 ◽

Vol 8 (1) ◽

Cited By ~ 5

Author(s):

Toshiki Kanaki ◽

Hiroki Yamasaki ◽

Tomohiro Koyama ◽

Daichi Chiba ◽

Shinobu Ohya ◽

...

Keyword(s):

Electric Field ◽

Metal Oxide ◽

Field Effect ◽

Field Effect Transistor ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Tunneling Magnetoresistance ◽

Current Modulation ◽

Large Current ◽

Effect Transistor

Download Full-text

β-Ga2O3 nanowires and thin films for metal oxide semiconductor gas sensors: Sensing mechanisms and performance enhancement strategies

Journal of Materiomics ◽

10.1016/j.jmat.2019.08.003 ◽

2019 ◽

Vol 5 (4) ◽

pp. 542-557 ◽

Cited By ~ 16

Author(s):

Adeel Afzal

Keyword(s):

Thin Films ◽

Metal Oxide ◽

Gas Sensors ◽

Performance Enhancement ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Semiconductor Gas Sensors ◽

And Performance

Download Full-text

Correlations between structural and electrical properties of nitrided SiOx thin films used as power metal oxide semiconductor field effect transistor gate dielectric

Applied Physics Letters ◽

10.1063/1.3021404 ◽

2008 ◽

Vol 93 (18) ◽

pp. 182109

Author(s):

E. Fazio ◽

F. Neri ◽

G. Curró M. Camalleri ◽

D. Calí

Keyword(s):

Thin Films ◽

Electrical Properties ◽

Metal Oxide ◽

Field Effect ◽

Field Effect Transistor ◽

Gate Dielectric ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Structural And Electrical Properties ◽

Effect Transistor

Download Full-text

Dramatic enhancement of low electric-field hole mobility in metal source/drain Ge p-channel metal-oxide-semiconductor field-effect transistors by introduction of Al and Hf into SiO2/GeO2 gate stack

Applied Physics Letters ◽

10.1063/1.4821546 ◽

2013 ◽

Vol 103 (12) ◽

pp. 122106 ◽

Cited By ~ 20

Author(s):

Keisuke Yamamoto ◽

Takahiro Sada ◽

Dong Wang ◽

Hiroshi Nakashima

Keyword(s):

Electric Field ◽

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Hole Mobility ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Gate Stack ◽

Metal Source

Download Full-text

ChemInform Abstract: Preparation of Device-Quality SiO2 Thin Films by Remote Plasma- Enhanced Chemical Vapor Deposition (PECVD): Applications in Metal- Oxide-Semiconductor (MOS) Devices

ChemInform ◽

10.1002/chin.199636322 ◽

2010 ◽

Vol 27 (36) ◽

pp. no-no

Author(s):

G. LUCOVSKY

Keyword(s):

Thin Films ◽

Chemical Vapor Deposition ◽

Metal Oxide ◽

Vapor Deposition ◽

Chemical Vapor ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Remote Plasma ◽

Mos Devices

Download Full-text

Preparation of device-quality SiO2 thin films by remote plasma-enhanced chemical vapour deposition (PECVD): Applications in metal-oxide-semiconductor (MOS) devices

Advanced Materials for Optics and Electronics ◽

10.1002/(sici)1099-0712(199603)6:2<55::aid-amo226>3.0.co;2-j ◽

1996 ◽

Vol 6 (2) ◽

pp. 55-72 ◽

Cited By ~ 10

Author(s):

Gerald Lucovsky

Keyword(s):

Thin Films ◽

Metal Oxide ◽

Chemical Vapour Deposition ◽

Vapour Deposition ◽

Chemical Vapour ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Remote Plasma ◽

Mos Devices

Download Full-text

Importance of interface engineering for synthesis of SrHfO3perovskite thin films on Si substrates through crystallization of amorphous films and control of flat-band voltages of metal–oxide–semiconductor capacitors

Japanese Journal of Applied Physics ◽

10.7567/jjap.53.04ea03 ◽

2014 ◽

Vol 53 (4S) ◽

pp. 04EA03 ◽

Cited By ~ 2

Author(s):

Shinji Migita ◽

Yukinori Morita ◽

Meishoku Masahara ◽

Hiroyuki Ota

Keyword(s):

Thin Films ◽

Metal Oxide ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Flat Band ◽

Interface Engineering ◽

Amorphous Films ◽

Si Substrates ◽

And Control

Download Full-text

Study of defects induced by high‐electric‐field stress into a thin gate oxide (11 nm) of metal‐oxide‐semiconductor capacitors

Journal of Applied Physics ◽

10.1063/1.354937 ◽

1993 ◽

Vol 74 (2) ◽

pp. 1124-1130 ◽

Cited By ~ 26

Author(s):

Abdelillah El‐Hdiy ◽

Guy Salace ◽

Christian Petit ◽

Marc Jourdain ◽

Dominique Vuillaume

Keyword(s):

Electric Field ◽

Metal Oxide ◽

Gate Oxide ◽

Metal Oxide Semiconductor ◽

High Electric Field ◽

Oxide Semiconductor ◽

Field Stress ◽

Thin Gate Oxide

Download Full-text