On the migration of point defects in irradiated pure Ni and NiCu Alloys

1986 ◽  
Vol 95 (2) ◽  
pp. K109-K112
Author(s):  
A. R. Ali ◽  
G. Said
Keyword(s):  
Point Defects ◽  
Cu Alloys

On the migration of point defects in irradiated pure Ni and Ni-Cu alloys

Physica B+C ◽  
1986 ◽  
Vol 141 (3) ◽  
pp. 302-304
Author(s):  
A.R. Ali ◽  
G. Said
Keyword(s):  
Point Defects ◽  
Cu Alloys

Plastic deformation of θ ' in Al-4%Cu alloy

1978 ◽  
Vol 36 (1) ◽  
pp. 576-577
Author(s):  
Shrikant P. Bhat
Keyword(s):  
Deformation Behavior ◽  
Room Temperature ◽  
Electron Microscopic Observation ◽  
Bulk Alloy ◽  
Electron Microscopic ◽  
Cu Alloy ◽  
Cu Alloys ◽  
Orowan Mechanism ◽  
The Subject ◽  
Cyclic Straining

deformation behavior of Al-Cu alloys aged to contain θ ' has been the subject of many investigations (e.g., Ref. 1-5). Since θ ' is strong and hard, dislocations bypass θ ' plates (Orowan mechanism) at low strains. However, at high strains the partially coherent θ ' plates are probably sheared, although the mechanism is complex, depending on the form of deformation. Particularly, the cyclic straining of the bulk alloy is known to produce gross bends and twists of θ '. However, no detailed investigation of the deformation of θ ' has yet been reported; moreover, Calabrese and Laird interpreted the deformation of θ ' as largely being elastic.During an investigation of high temperature cyclic deformation, the detailed electron-microscopic observation revealed that, under reversed straining conditions, θ ' particles are severely distorted--bent and twisted depending on the local matrix constraint. A typical electronmicrograph, showing the twist is shown in Fig. 1. In order to establish whether the deformation is elastic or plastic, a sample from a specimen cycled at room temperature was heated inside the microscope and the results are presented in a series of micrographs (Fig. 2a-e).

Microstructural Evolution in Reduced TiO2

1981 ◽  
Vol 39 ◽  
pp. 74-75
Author(s):  
W. T. Donlon ◽  
S. Shinozaki ◽  
E. M. Logothetis ◽  
W. Kaizer
Keyword(s):  
Microstructural Evolution ◽  
Point Defects ◽  
Extended Defects ◽  
Small Deviations ◽  
Controlled Atmospheres ◽  
Limited Solubility ◽  
Thin Foils ◽  
Heat Treated ◽  
Porous Polycrystalline ◽  
Crystallographic Shear

Since point defects have a limited solubility in the rutile (TiO2) lattice, small deviations from stoichiometry are known to produce crystallographic shear (CS) planes which accomodate local variations in composition. The material used in this study was porous polycrystalline TiO2 (60% dense), in the form of 3mm. diameter disks, 1mm thick. Samples were mechanically polished, ion-milled by conventional techniques, and initially examined with the use of a Siemens EM102. The electron transparent thin foils were then heat-treated under controlled atmospheres of CO/CO2 and H2 and reexamined in the same manner.The “as-received” material contained mostly TiO2 grains (∼5μm diameter) which had no extended defects. Several grains however, aid exhibit a structure similar to micro-twinned grains observed in reduced rutile. Lattice fringe images (Fig. 1) of these grains reveal that the adjoining layers are not simply twin related variants of a single TinO2n-1 compound. Rather these layers (100 - 250 Å wide) are alternately comprised of stoichiometric TiO2 (rutile) and reduced TiO2 in the form of Ti8O15, with the Ti8O15 layers on either side of the TiO2 being twin related.

Precipitation in Al-Li-Cu Alloys

1981 ◽  
Vol 39 ◽  
pp. 44-45
Author(s):  
J. E. O'Neal ◽  
K. K. Sankaran
Keyword(s):  
Electron Microscopy ◽  
Age Hardening ◽  
Precipitation Behavior ◽  
Zone Formation ◽  
Specific Strength ◽  
Hardening Behavior ◽  
Cu Alloys ◽  
High Specific Strength ◽  
Transmission Electron ◽  
Structural Applications

Al-Li-Cu alloys combine high specific strength and high specific modulus and are potential candidates for aircraft structural applications. As part of an effort to optimize Al-Li-Cu alloys for specific applications, precipitation in these alloys was studied for a range of compositions, and the mechanical behavior was correlated with the microstructures.Alloys with nominal compositions of Al-4Cu-2Li-0.2Zr, Al-2.5Cu-2.5Li-0.2Zr, and Al-l.5Cu-2.5Li-0.5Mn were argon-atomized into powder at solidification rates ≈ 103°C/s. Powders were consolidated into bar stock by vacuum pressing and extruding at 400°C. Alloy specimens were solution annealed at 530°C and aged at temperatures up to 250°C, and the resultant precipitation was studied by transmission electron microscopy (TEM).The low-temperature (≲100°C) precipitation behavior of the Al-4Cu-2Li-0.2Zr alloy is a combination of the separate precipitation behaviors of Al-Cu and Al-Li alloys. The age-hardening behavior at these temperatures is characteristic of Guinier-Preston (GP) zone formation, with additional strengthening resulting from the coherent precipitation of δ’ (Al3Li, Ll2 structure), the presence of which is revealed by the selected-area diffraction pattern (SADP) shown in Figure la.

Simulated Dark-Field Electron Micrographs of Point Defects and Organometallics

1975 ◽  
Vol 33 ◽  
pp. 200-201
Author(s):  
William Krakow
Keyword(s):  
Electron Micrographs ◽  
Point Defects ◽  
Structure Determination ◽  
Atomic Structure ◽  
Image Interpretation ◽  
Dark Field ◽  
Field Electron ◽  
Dark Field Microscopy ◽  
Dark Field Electron

Tilted beam dark-field microscopy has been applied to atomic structure determination in perfect crystals, several synthesized molecules with heavy atcm markers and in the study of displaced atoms in crystals. Interpretation of this information in terms of atom positions and atom correlations is not straightforward. Therefore, calculated dark-field images can be an invaluable aid in image interpretation.

Defects in Crystals

1968 ◽  
Vol 26 ◽  
pp. 244-245
Author(s):  
Kenneth R. Lawless
Keyword(s):  
Electron Microscope ◽  
Point Defects ◽  
Surface Defects ◽  
Chemical Properties ◽  
Material Point ◽  
Crystal Defects ◽  
Defects In Crystals ◽  
Irradiation Effects ◽  
Normal Lattice ◽  
Line Defects

One of the most important applications of the electron microscope in recent years has been to the observation of defects in crystals. Replica techniques have been widely utilized for many years for the observation of surface defects, but more recently the most striking use of the electron microscope has been for the direct observation of internal defects in crystals, utilizing the transmission of electrons through thin samples.Defects in crystals may be classified basically as point defects, line defects, and planar defects, all of which play an important role in determining the physical or chemical properties of a material. Point defects are of two types, either vacancies where individual atoms are missing from lattice sites, or interstitials where an atom is situated in between normal lattice sites. The so-called point defects most commonly observed are actually aggregates of either vacancies or interstitials. Details of crystal defects of this type are considered in the special session on “Irradiation Effects in Materials” and will not be considered in detail in this session.

Imaging of Al-Li-Cu alloys with a Scanning Ion Microprobe

1990 ◽  
Vol 48 (2) ◽  
pp. 314-315
Author(s):  
K.K. Soni ◽  
D.B. Williams ◽  
J.M. Chabala ◽  
R. Levi-Setti ◽  
D.E. Newbury
Keyword(s):  
Mass Spectrometry ◽  
Secondary Ion Mass Spectrometry ◽  
Equilibrium Phase ◽  
Icosahedral Symmetry ◽  
Ion Microprobe ◽  
X Ray ◽  
Cu Alloys ◽  
Two Phases ◽  
The University ◽  
Secondary Ion

In contrast to the inability of x-ray microanalysis to detect Li, secondary ion mass spectrometry (SIMS) generates a very strong Li+ signal. The latter’s potential was recently exploited by Williams et al. in the study of binary Al-Li alloys. The present study of Al-Li-Cu was done using the high resolution scanning ion microprobe (SIM) at the University of Chicago (UC). The UC SIM employs a 40 keV, ∼70 nm diameter Ga+ probe extracted from a liquid Ga source, which is scanned over areas smaller than 160×160 μm2 using a 512×512 raster. During this experiment, the sample was held at 2 × 10-8 torr.In the Al-Li-Cu system, two phases of major importance are T1 and T2, with nominal compositions of Al2LiCu and Al6Li3Cu respectively. In commercial alloys, T1 develops a plate-like structure with a thickness <∼2 nm and is therefore inaccessible to conventional microanalytical techniques. T2 is the equilibrium phase with apparent icosahedral symmetry and its presence is undesirable in industrial alloys.

Study of dislocation loops in Arsenic-Rich as-grown GaAs

1987 ◽  
Vol 45 ◽  
pp. 350-351
Author(s):  
Byung-Teak Lee
Keyword(s):  
Point Defects ◽  
Electronic Devices ◽  
Arsenic Concentration ◽  
Stoichiometric Compound ◽  
Dislocation Loops ◽  
Gaas Crystal ◽  
Ion Milling ◽  
Transmission Electron ◽  
Arsenic Source ◽  
High Arsenic

Grown-in dislocations in GaAs have been a major obstacle in utilizing this material for the potential electronic devices. Although it has been proposed in many reports that supersaturation of point defects can generate dislocation loops in growing crystals and can be a main formation mechanism of grown-in dislocations, there are very few reports on either the observation or the structural analysis of the stoichiometry-generated loops. In this work, dislocation loops in an arsenic-rich GaAs crystal have been studied by transmission electron microscopy.The single crystal with high arsenic concentration was grown using the Horizontal Bridgman method. The arsenic source temperature during the crystal growth was about 630°C whereas 617±1°C is normally believed to be optimum one to grow a stoichiometric compound. Samples with various orientations were prepared either by chemical thinning or ion milling and examined in both a JEOL JEM 200CX and a Siemens Elmiskop 102.

Detection of a point defect in a silicon single crystal by high-resolution TEM

1995 ◽  
Vol 53 ◽  
pp. 466-467
Author(s):  
M. Awaji
Keyword(s):  
High Resolution ◽  
Single Crystal ◽  
Point Defect ◽  
Point Defects ◽  
Noise Level ◽  
Dark Field ◽  
Silicon Single Crystal ◽  
High Resolution Image ◽  
Dark Field Imaging ◽  
Field Imaging

It is necessary to improve the resolution, brightness and signal-to-noise ratio(s/n) for the detection and identification of point defects in crystals. In order to observe point defects, multi-beam dark-field imaging is one of the useful methods. Though this method can improve resolution and brightness compared with dark-field imaging by diffuse scattering, the problem of s/n still exists. In order to improve the exposure time due to the low intensity of the dark-field image and the low resolution, we discuss in this paper the bright-field high-resolution image and the corresponding subtracted image with reference to a changing noise level, and examine the possibility for in-situ observation, identification and detection of the movement of a point defect produced in the early stage of damage process by high energy electron bombardment.The high-resolution image contrast of a silicon single crystal in the [10] orientation containing a triple divacancy cluster is calculated using the Cowley-Moodie dynamical theory and for a changing gaussian noise level. This divacancy model was deduced from experimental results obtained by electron spin resonance. The calculation condition was for the lMeV Berkeley ARM operated at 800KeV.

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