Четырехволновое взаимодействие на фазово-амплитудных голографических решетках в фоторефрактивном пьезокристалле класса симметрии 43m

A system of coupled-wave equations for calculating the vector amplitudes of linearly polarized light waves at four-wave mixing by phase-amplitude holographic gratings in a cubic photorefractive semiconductor of an arbitrary cut belonging to the 4 ̅3m symmetry class is presented. The dependences of the intensities of the polarization components of the reversed light wave on the orientation angle for GaAs crystal of (110)-cut are calculated on the basis of the numerical solution of the system of coupled-wave equations. The obtained dependences are compared with the known theoretical and experimental data. It is shown that the best agreement between the results of theoretical modeling and experimental data at calculating the counterpropagating four-wave mixing in GaAs crystal of (110)-cut is achieved if formation of several phase-amplitude holographic gratings is allowed, and the contribution of the photoelastic and inverse piezoelectric effects are taken into account together with absorption of the crystal.

Влияние быстрого термического отжига на распределение атомов азота в GaAsN/GaAs

The article investigates the effect of rapid thermal annealing of ternary GaAs1-xNx/GaAs solid solutions on the distribution of nitrogen atoms in the crystal lattice. The samples are studied by photoluminescence spectroscopy and high-resolution X-ray diffractometry. Due to the size and electronegativity mismatch of nitrogen and arsenic atoms, nitrogen is incorporated unevenly into the GaAs crystal lattice. Options of the nitrogen atoms arrangement in the GaAs crystal lattice before and after rapid thermal annealing are shown.

Origin of Nanoscale Incipient Plasticity in GaAs and InP Crystal

In this article, we exhibit the influence of doping on nanoindentation-induced incipient plasticity in GaAs and InP crystals. Nanoindentation experiments carried out on a GaAs crystal show a reduction in contact pressure at the beginning of the plastic deformation caused by an increase in Si doping. Given that the substitutional Si defects cause a decrease in the pressure of the GaAs-I → GaAs-II phase transformation, we concluded that the elastic–plastic transition in GaAs is a phase-change-driven phenomenon. In contrast, Zn- and S-doping of InP crystals cause an increase in contact pressure at the elastic–plastic transition, revealing its dislocation origin. Our mechanical measurements were supplemented by nanoECR experiments, which showed a significant difference in the flow of the electrical current at the onset of plastic deformation of the semiconductors under consideration.