Hierarchy of periodic orbits and associated energy level clusters in a quantum well in the regime of classical chaos

AbstractThe anisotropic Kepler problem has a group of symmetries with three generators; they are symmetries respect to zero velocity curve and the two axes of motion’s plane. For a fixed negative energy level it has four homothetic orbits. We describe the symmetric periodic orbits near these homothetic orbits. Full details and proofs will appear elsewhere (Casasayas-Llibre).

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The energy-level and vibrational frequency properties of a polaron weak-coupled in a quantum well with asymmetrical Gaussian confinement potential

Journal of Semiconductors ◽

10.1088/1674-4926/40/4/042901 ◽

2019 ◽

Vol 40 (4) ◽

pp. 042901 ◽

Cited By ~ 1

Author(s):

Wei Xiao ◽

Jinglin Xiao

Keyword(s):

Energy Level ◽

Quantum Well ◽

Vibrational Frequency ◽

Confinement Potential ◽

Frequency Properties

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Comparison the Gain Characteristic of AlInGaAs/AlGaAs and GaAs/AlGaAs Quantum Wells

Materials Science Forum ◽

10.4028/www.scientific.net/msf.475-479.1685 ◽

2005 ◽

Vol 475-479 ◽

pp. 1685-1688 ◽

Cited By ~ 1

Author(s):

Hongxing Gai ◽

Jun Deng ◽

Jian Jun Li ◽

Guang Di Shen ◽

Jianxin Chen

Keyword(s):

Energy Level ◽

Quantum Well ◽

Quantum Wells ◽

Optical Gain ◽

Level Change ◽

Lorentzian Function ◽

Valence Bands ◽

Gain Characteristic

According to the Harrison’s model, the level change of conduction and valence bands caused by the strain of AlInGaAs/AlGaAs quantum well (QW) was analyzed firstly. The energy level of the electron and hole in the AlInGaAs/AlGaAs strained and GaAs/AlGaAs unstrained QW were calculated, respectively. In addition, taking the lorentzian function, the linear gain of the two QWs were calculated and discussed. Contrast the gain performance of GaAs/AlGaAs QW with that of AlyInxGa1-x-yAs/AlGaAs QW, it can be found that the strained AlyInxGa1-x-yAs/AlGaAs QW material has more promising optical gain than that of the GaAs/AlGaAs QW.

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Study of the energy level properties and configuration optimization of coupled quantum well

10.1117/12.743456 ◽

2007 ◽

Author(s):

Zunwei Wang ◽

Xinglian Wang ◽

Zhixin Xu

Keyword(s):

Energy Level ◽

Quantum Well ◽

Configuration Optimization ◽

Coupled Quantum Well

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Intersubband Transitions in In0.07Ga0.93As/Al0.4Ga0.6As Multiple Quantum Wells

MRS Proceedings ◽

10.1557/proc-299-53 ◽

1994 ◽

Vol 299 ◽

Cited By ~ 1

Author(s):

F. Szmulowicz ◽

M. O. Manasreh ◽

C. Kutsche ◽

C. E. Stutz

Keyword(s):

Energy Level ◽

Quantum Well ◽

Quantum Wells ◽

Excited States ◽

Fermi Energy ◽

Multiple Quantum Well ◽

Energy Separation ◽

Multiple Quantum ◽

Fermi Energy Level ◽

Intersubband Transitions

AbstractIntersubband transitions in a series of well-doped ([Si] = 2.0×1018cm−3) In0.07Ga0.93As/Al0.4Ga0.6As multiple quantum well samples were studied as a function of the well width by using the optical absorption technique. A single intersubband transition is observed in samples in which the Fermi energy level is between the ground and the first excited states in the quantum well. On the other hand, two intersubband transitions were recorded in samples where the Fermi energy level lies between the first and the second excited states. These two intersubband transitions were attributed to ground-to-first excited states and first-to-second excited states transitions. The energy separation between the latter two intersubband transitions was found to increase as the well width is increased. The fact that two intersubband transitions were observed in certain samples may suggest that specially designed quantum wells can be used for two color long wavelength infrared detectors.

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