Amorphous germanium (a-Ge) tables to structural characterization: structural data for sputtered films

Author(s):  
2017 ◽  
Vol 73 (9) ◽  
pp. 1385-1388 ◽  
Author(s):  
Sergey N. Britvin ◽  
Andrey M. Rumyantsev

7-Azabicyclo[2.2.1]heptane (7-azanorbornane) is a bridged heterocyclic nucleus found in epibatidine, the alkaloid isolated from the skin of the tropical poison frogEpipedobates tricolor. Since epibatidine is known as one of the most potent acetylcholine nicotinic receptor agonists, a plethora of literature has been devoted to this alkaloid. However, there are no structural data on the unsubstituted 7-azanorbornane, the parent bicyclic ring of epibatidine and its derivatives. We herein present the structural characterization of the 7-azabicyclo[2.2.1]heptane parent ring as its hydrochloride salt, namely 7-azabicyclo[2.2.1]heptan-7-ium chloride, C6H12N+·Cl−. The compete cation is generated by a crystallographic mirror plane with the N atom lying on the mirror, as does the chloride anion. In the crystal, the cations are linked to the anions by N—H...Cl hydrogen bonds, which generate [001] chains.


1990 ◽  
Vol 202 ◽  
Author(s):  
Akio Okamoto ◽  
Seiiti Shirai ◽  
Shiro Suyama ◽  
Tadashi Serikawa

ABSTRACTA high mobility of 390 cm2/Vs was successfully obtained for sputtered films, compared with 100 cm2/Vs for CVD films. Then, structural characterization of laser-annealed sputtered silicon films were performed, and compared with that of CVD films. TEM observations show a structural difference between the two film types. In sputtered films, many fine grain-like regions which have slightly different crystal orientation from surrounding regions are observed. On the other hand, in the CVD films, defects are widely spread over the film. X-ray diffraction, Raman scattering, and SIMS yield almost the same results in both films. The above-mentioned structural difference is thought to be essential to obtain high mobility.


1995 ◽  
Vol 130 (5) ◽  
pp. 1149-1159 ◽  
Author(s):  
M Moritz ◽  
M B Braunfeld ◽  
J C Fung ◽  
J W Sedat ◽  
B M Alberts ◽  
...  

An understanding of the mechanism and structure of microtubule (MT)-nucleating sites within the pericentriolar material (PCM) of the centrosome has been elusive. This is partly due to the difficulty in obtaining large quantities of centrosomes for analysis, as well as to the problem of attaining interpretable structural data with conventional EM techniques. We describe a protocol for isolating a large quantity of functional centrosomes from early Drosophila embryos. Using automated electron tomography, we have begun a three-dimensional structural characterization of these intact centrosomes with and without regrown MTs. Reconstructions of the centrosomes to approximately 6-8 nm resolution revealed no large structures at the minus ends of MTs, suggesting that if MT-nucleating material physically contacts the MTs, it must conform closely to the shape of the minus end. While many MTs originate near the centrioles, MT minus ends were found throughout the PCM, and even close to its outer boundary. The MTs criss-crossed the PCM, suggesting that nucleating sites are oriented in many different directions. Reconstructions of centrosomes without MTs suggest that there is a reorganization of the PCM upon MT regrowth; moreover, ring-like structures that have a similar diameter as MTs are apparent in the PCM of centrosomes without MTs, and may be MT-nucleating sites.


Author(s):  
R. F. Schneidmiller ◽  
W. F. Thrower ◽  
C. Ang

Solid state materials in the form of thin films have found increasing structural and electronic applications. Among the multitude of thin film deposition techniques, the radio frequency induced plasma sputtering has gained considerable utilization in recent years through advances in equipment design and process improvement, as well as the discovery of the versatility of the process to control film properties. In our laboratory we have used the scanning electron microscope extensively in the direct and indirect characterization of sputtered films for correlation with their physical and electrical properties.Scanning electron microscopy is a powerful tool for the examination of surfaces of solids and for the failure analysis of structural components and microelectronic devices.


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