Intersubband Transition and Electron Transport in Potential-Inserted Quantum Well Structures and their Potentials for Infrared Photodetector

Author(s):  
H. Sakaki ◽  
H. Sugawara ◽  
J. Motohisa ◽  
T. Noda
2000 ◽  
Vol 36 (23) ◽  
pp. 1972 ◽  
Author(s):  
A. Neogi ◽  
H. Yoshida ◽  
T. Mozume ◽  
N. Georgiev ◽  
T. Akiyama ◽  
...  

2015 ◽  
Vol 117 (18) ◽  
pp. 185703 ◽  
Author(s):  
David A. Browne ◽  
Baishakhi Mazumder ◽  
Yuh-Renn Wu ◽  
James S. Speck

1993 ◽  
Author(s):  
Y. Hirayama ◽  
J. H. Smet ◽  
L. H. Peng ◽  
C. G. Fonstad ◽  
E. P. Ippen

2001 ◽  
Vol 10 (03) ◽  
pp. 337-344 ◽  
Author(s):  
YUTAKA TAKAHASHI ◽  
TADASHI KAWAZOE ◽  
HITOSHI KAWAGUCHI ◽  
YUICHI KAWAMURA

We have successfully observed the intersubband absorption in doped as well as in undoped, unstrained quantum well structures of In0.53Ga0.47As/In0.52Al0.48As . The absorption is well resolved near the short-wavelength limit in this structure. Within the accuracy of our measurements, the intersubband transition is observed only in TM mode polarizations in both doped and undoped structures.


1994 ◽  
Vol 305 (1-3) ◽  
pp. 322-326 ◽  
Author(s):  
Y. Ohno ◽  
M. Tsuchiya ◽  
T. Matsusue ◽  
T. Noda ◽  
H. Sakaki

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