1.798μm Intersubband Transition in InGaAs/AlAs Pseudomorphic Quantum Well Structures

1993 ◽  
Author(s):  
Y. Hirayama ◽  
J. H. Smet ◽  
L. H. Peng ◽  
C. G. Fonstad ◽  
E. P. Ippen
2000 ◽  
Vol 36 (23) ◽  
pp. 1972 ◽  
Author(s):  
A. Neogi ◽  
H. Yoshida ◽  
T. Mozume ◽  
N. Georgiev ◽  
T. Akiyama ◽  
...  

2001 ◽  
Vol 10 (03) ◽  
pp. 337-344 ◽  
Author(s):  
YUTAKA TAKAHASHI ◽  
TADASHI KAWAZOE ◽  
HITOSHI KAWAGUCHI ◽  
YUICHI KAWAMURA

We have successfully observed the intersubband absorption in doped as well as in undoped, unstrained quantum well structures of In0.53Ga0.47As/In0.52Al0.48As . The absorption is well resolved near the short-wavelength limit in this structure. Within the accuracy of our measurements, the intersubband transition is observed only in TM mode polarizations in both doped and undoped structures.


1996 ◽  
Vol 43 (8) ◽  
pp. 1657-1669 ◽  
Author(s):  
SHARMILA BANERJEE and PRANAY K SEN

1987 ◽  
Vol 48 (C5) ◽  
pp. C5-457-C5-461
Author(s):  
C. J. SUMMERS ◽  
K. F. BRENNAN ◽  
A. TORABI ◽  
H. M. HARRIS ◽  
J. COMAS

2018 ◽  
Vol 23 (4) ◽  
pp. 327-334
Author(s):  
N.G. Yaremenko ◽  
◽  
V.A. Strakhov ◽  
M.V. Karachevtseva ◽  
◽  
...  

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