Growth of high quality AlInAs by low pressure organometallic chemical vapor deposition for high speed and optoelectronic device applications

1991 ◽  
Vol 108 (3-4) ◽  
pp. 441-448 ◽  
Author(s):  
R. Bhat ◽  
M.A. Koza ◽  
K. Kash ◽  
S.J. Allen ◽  
W.P. Hong ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
High Speed ◽  
Chemical Vapor ◽  
Optoelectronic Device ◽  
Low Pressure ◽  
High Quality ◽  
Device Applications ◽  
Organometallic Chemical Vapor Deposition

Development of Vertical 3×2〞LPCVD System for Fast Epitaxial Growth on 4H-SiC

2012 ◽  
Vol 717-720 ◽  
pp. 105-108 ◽  
Author(s):  
Wan Shun Zhao ◽  
Guo Sheng Sun ◽  
Hai Lei Wu ◽  
Guo Guo Yan ◽  
Liu Zheng ◽  
...  
Keyword(s):  
Growth Rate ◽  
Chemical Vapor Deposition ◽  
Epitaxial Growth ◽  
Vapor Deposition ◽  
Growth Process ◽  
Chemical Vapor ◽  
Low Pressure ◽  
High Quality ◽  
Pressure Chemical ◽  
Homoepitaxial Layers

A vertical 3×2〞low pressure chemical vapor deposition (LPCVD) system has been developed to realize fast epitaxial growth of 4H-SiC. The epitaxial growth process was optimized and it was found that the growth rate increases with increasing C/Si ratio and tends to saturate when C/Si ratio exceeded 1. Mirror-like thick 4H-SiC homoepitaxial layers are obtained at 1500 °C and C/Si ratio of 0.5 with a growth rate of 25 μm/h. The minimum RMS roughness is 0.20 nm and the FWHM of rocking curves of epilayers grown for 1 hour and 2 hours are 26.2 arcsec and 32.4 arcsec, respectively. These results indicate that high-quality thick 4H-SiC epilayers can be grown successfully on the off-orientation 4H-SiC substrates.

High‐Tc Undoped and Pb‐Doped BI‐SR‐CA‐CU‐O thin Films Prepared by Organometallic Chemical Vapor Deposition

1989 ◽  
Vol 169 ◽  
Author(s):  
J. M. Zhang ◽  
H. O Marcy ◽  
L .M. Tonge ◽  
B. W. Wessels ◽  
T. J. Marks ◽  
...  
Keyword(s):  
Thin Films ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Low Pressure ◽  
High Tc ◽  
Metal Organic ◽  
Organic Precursors ◽  
Organometallic Chemical Vapor Deposition

AbstractFilms of the high‐Tc undoped and Pb‐doped Bi‐Sr‐Ca‐Cu‐O (BSCCO) superconductors have been prepared by low pressure organometallic chemical vapor deposition (OMCVD) using the volatile metal‐organic precursors Cu(acetylacetonate)2, Sr(dipivaloylmethanate)2, Ca(dipivaloylmethanate)2, and triphenyl bismuth. Factors which influence texture and morphology of the OMCVD‐derived films have been investigated, including the effects of annealing, doping, and substrates.

Controllable synthesis of high quality monolayer WS2 on a SiO2/Si substrate by chemical vapor deposition

RSC Advances ◽  
2015 ◽  
Vol 5 (21) ◽  
pp. 15795-15799 ◽  
Author(s):  
Qi Fu ◽  
Wenhui Wang ◽  
Lei Yang ◽  
Jian Huang ◽  
Jingyu Zhang ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Tungsten Disulfide ◽  
Controllable Synthesis ◽  
Si Substrate ◽  
High Quality ◽  
Device Applications ◽  
Direct Band

Tungsten disulfide (WS2), with its transformation from indirect to direct band transitions when scaled down to a monolayer, exhibits great potential for future micro-device applications.

Process Optimization for Synthesis of High-Quality Graphene Films by Low-Pressure Chemical Vapor Deposition

2012 ◽  
Vol 51 (6S) ◽  
pp. 06FD21 ◽  
Author(s):  
Dongheon Lee ◽  
Kihwan Lee ◽  
Saebyuk Jeong ◽  
Juhyun Lee ◽  
Bosik Choi ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Process Optimization ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Low Pressure ◽  
High Quality ◽  
Graphene Films ◽  
Pressure Chemical
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