High temperature annealing behavior following the 191Ir(n, γ)192Ir reaction in K2IrCl6

1970 ◽  
Vol 32 (6) ◽  
pp. 1791-1797
Author(s):  
Joseph Jach ◽  
Prafulla Chandra
Keyword(s):  
High Temperature ◽  
High Temperature Annealing ◽  
Annealing Behavior

Annealing Behavior of Electrical Resistivities Perpendicular and Parallel to the Basal Plane of Heavily Nitrogen-Doped 4H-SiC Crystals

2018 ◽  
Vol 924 ◽  
pp. 293-296 ◽  
Author(s):  
Kiyo Okawa ◽  
Yuina Mannen ◽  
Kentaro Shioura ◽  
Noboru Ohtani ◽  
Masakazu Katsuno ◽  
...  
Keyword(s):  
High Temperature ◽  
Basal Plane ◽  
Stacking Fault ◽  
High Temperature Annealing ◽  
Annealing Behavior ◽  
Nitrogen Doped ◽  
Electrical Resistivities ◽  
C 30 ◽  
Induced Changes

The annealing behavior of electrical resistivities perpendicular and parallel to the basal plane of heavily nitrogen-doped 4H-SiC crystals was investigated. The temperature dependencies of the resistivities exhibited characteristic behaviors after multiple rounds of high-temperature annealing (1100°C, 30 min). High-temperature annealing induced stacking fault formation to various extents in heavily nitrogen-doped 4H-SiC crystals. Based on these results, we discuss the cause and mechanism of the observed annealing-induced changes in electrical resistivities of the crystals.

High-temperature annealing behavior of ion-implanted spinel single crystals

2004 ◽  
Vol 19 (12) ◽  
pp. 3463-3473 ◽  
Author(s):  
S.E. Enescu ◽  
L. Thomé ◽  
A. Gentils ◽  
T. Thomé
Keyword(s):  
High Temperature ◽  
Single Crystals ◽  
Structural Properties ◽  
Nuclear Waste ◽  
Annealing Temperature ◽  
High Temperature Annealing ◽  
Annealing Behavior ◽  
Lattice Disorder ◽  
Cs Ions ◽  
Composition Changes

This paper reports modifications of the chemical and structural properties of MgAl2O4 single crystals implanted with Cs ions and submitted to high-temperature annealing. The composition changes, the damage created in the three sublattices (Al, Mg and O) of the crystals, and the behavior of implanted ions were studied by Rutherford backscattering and channeling experiments as a function of the Cs fluence and annealing temperature. The data show that annealing above 700–800 °C induces a huge modification of the stoichiometry of the material, a decrease of the lattice disorder, and an increase of the fraction of Cs atoms located in substitutional lattice sites. These results have to be taken into account for the future use of spinel as a matrix for the transmutation of nuclear waste.

Defect reduction in oxygen implanted silicon-on-insulator material during high-temperature annealing

1989 ◽  
Vol 47 ◽  
pp. 604-605
Author(s):  
P. Roitman ◽  
B. Cordts ◽  
S. Visitserngtrakul ◽  
S.J. Krause
Keyword(s):  
High Temperature ◽  
Annealing Temperature ◽  
Silicon On Insulator ◽  
High Dose ◽  
High Temperature Annealing ◽  
High Current ◽  
Defect Reduction ◽  
Annealing Step ◽  
Multiple Cycle ◽  
Defect Densities

Synthesis of a thin, buried dielectric layer to form a silicon-on-insulator (SOI) material by high dose oxygen implantation (SIMOX – Separation by IMplanted Oxygen) is becoming an important technology due to the advent of high current (200 mA) oxygen implanters. Recently, reductions in defect densities from 109 cm−2 down to 107 cm−2 or less have been reported. They were achieved with a final high temperature annealing step (1300°C – 1400°C) in conjunction with: a) high temperature implantation or; b) channeling implantation or; c) multiple cycle implantation. However, the processes and conditions for reduction and elimination of precipitates and defects during high temperature annealing are not well understood. In this work we have studied the effect of annealing temperature on defect and precipitate reduction for SIMOX samples which were processed first with high temperature, high current implantation followed by high temperature annealing.

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