High temperature annealing behavior of electron traps in thermal SiO2

1984 ◽  
Vol 27 (8-9) ◽  
pp. 709-719 ◽  
Author(s):  
P. Balk ◽  
M. Aslam ◽  
D.R. Young
Keyword(s):  
High Temperature ◽  
High Temperature Annealing ◽  
Annealing Behavior ◽  
Electron Traps

Annealing Behavior of Electrical Resistivities Perpendicular and Parallel to the Basal Plane of Heavily Nitrogen-Doped 4H-SiC Crystals

2018 ◽  
Vol 924 ◽  
pp. 293-296 ◽  
Author(s):  
Kiyo Okawa ◽  
Yuina Mannen ◽  
Kentaro Shioura ◽  
Noboru Ohtani ◽  
Masakazu Katsuno ◽  
...  
Keyword(s):  
High Temperature ◽  
Basal Plane ◽  
Stacking Fault ◽  
High Temperature Annealing ◽  
Annealing Behavior ◽  
Nitrogen Doped ◽  
Electrical Resistivities ◽  
C 30 ◽  
Induced Changes

The annealing behavior of electrical resistivities perpendicular and parallel to the basal plane of heavily nitrogen-doped 4H-SiC crystals was investigated. The temperature dependencies of the resistivities exhibited characteristic behaviors after multiple rounds of high-temperature annealing (1100°C, 30 min). High-temperature annealing induced stacking fault formation to various extents in heavily nitrogen-doped 4H-SiC crystals. Based on these results, we discuss the cause and mechanism of the observed annealing-induced changes in electrical resistivities of the crystals.

High-temperature annealing behavior of ion-implanted spinel single crystals

2004 ◽  
Vol 19 (12) ◽  
pp. 3463-3473 ◽  
Author(s):  
S.E. Enescu ◽  
L. Thomé ◽  
A. Gentils ◽  
T. Thomé
Keyword(s):  
High Temperature ◽  
Single Crystals ◽  
Structural Properties ◽  
Nuclear Waste ◽  
Annealing Temperature ◽  
High Temperature Annealing ◽  
Annealing Behavior ◽  
Lattice Disorder ◽  
Cs Ions ◽  
Composition Changes

This paper reports modifications of the chemical and structural properties of MgAl2O4 single crystals implanted with Cs ions and submitted to high-temperature annealing. The composition changes, the damage created in the three sublattices (Al, Mg and O) of the crystals, and the behavior of implanted ions were studied by Rutherford backscattering and channeling experiments as a function of the Cs fluence and annealing temperature. The data show that annealing above 700–800 °C induces a huge modification of the stoichiometry of the material, a decrease of the lattice disorder, and an increase of the fraction of Cs atoms located in substitutional lattice sites. These results have to be taken into account for the future use of spinel as a matrix for the transmutation of nuclear waste.

Electron traps created by high temperature annealing in MBE n-GaAs

1981 ◽  
Vol 10 (3) ◽  
pp. 445-453 ◽  
Author(s):  
D. S. Day ◽  
J. D. Oberstar ◽  
T. J. Drummond ◽  
H. Morkoc ◽  
A. Y. Cho ◽  
...  
Keyword(s):  
High Temperature ◽  
High Temperature Annealing ◽  
Electron Traps
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