78 K infrared absorption method for measuring the oxygen content in silicon

1983 ◽  
Vol 2 (2) ◽  
pp. 101-103 ◽  
Author(s):  
Yuezhen Li ◽  
Jinyuan Shen ◽  
Qimin Wang
2018 ◽  
Vol 26 (13) ◽  
pp. 17078 ◽  
Author(s):  
Seok Hwan Lee ◽  
Joohyun Lee ◽  
Sejong Chun ◽  
Woong Kang

1980 ◽  
Vol 34 (2) ◽  
pp. 167-171 ◽  
Author(s):  
D. G. Mead ◽  
S. R. Lowry

Room temperature Fourier transform infrared measurements on some contaminated silicon wafers are presented. Use of subtractive techniques readily allows both carbon and oxygen concentrations of about 0.1 ppm atomic to be obtained in relatively short measurement times (about 1 min), providing an adequate “pure” wafer is used as the reference standard.


2019 ◽  
Vol 136 (7) ◽  
pp. 2015-2024 ◽  
Author(s):  
A. Baghdadi ◽  
W. M. Bullis ◽  
M. C. Croarkin ◽  
Yue‐zhen Li ◽  
R. I. Scace ◽  
...  

2012 ◽  
Vol 503-504 ◽  
pp. 1347-1350
Author(s):  
Huai Bao Yuan ◽  
Yue Hong Li

The inner surface carbon in the inner grooved copper tube was determined by tube furnace heating-infrared absorption method. Some factors which influenced the determination such as sample preparation and cleaning, flow rate, furnace constants, blank value, calibration constant were tested and optimized. The inner surface carbon of copper tube was released completely while the experiment temperature was chosen as 400~600°C and the flow rate of oxygen was 750 mL/min. And the obtained integral calculus curve was ideal. The method has been applied to the determination of inner surface carbon in the inner grooved copper tube with carbon content of 0.24 mg/dm2. The result of the RSD was 3.7%. And the recovery experiment through joining in synthesize carbon sample was carried on, the recovery was 98~103%.


Sign in / Sign up

Export Citation Format

Share Document