Carrier concentration profiles by high-energy boron ion implantation into silicon

1991 ◽  
Vol 59-60 ◽  
pp. 1094-1097 ◽  
Author(s):  
H. Sayama ◽  
M. Takai ◽  
S. Namba ◽  
H. Ryssel
Keyword(s):  
Ion Implantation ◽  
Carrier Concentration ◽  
High Energy ◽  
Concentration Profiles

Electrical Properties of n- and p-type In0.53Ga0.47As Layers Formed by Ion Implantation and Rapid Thermal(Flash)Anneal

1987 ◽  
Vol 92 ◽  
Author(s):  
S.G. Liu ◽  
S.Y. Narayan ◽  
C.W. Magee ◽  
C.P. Wu ◽  
F. Kolondra ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Surface Morphology ◽  
Ion Implantation ◽  
Carrier Concentration ◽  
Concentration Profiles ◽  
Electrical Characteristics ◽  
Good Surface ◽  
Active Layers ◽  
P Type ◽  
Controlled Doping

ABSTRACTRapid thermal annealing (4−7s) of 28Si and 9Be implants in VPE-grown In0.53Ga0.47As has produced n- and p-type active layers with controlled doping levels between 1017 and 3×1018 cm−3. The multiple-implant schedules were based on Rp and ΔR data derived from SIMS measurements on single-energy implants. The activated n- and p-type layers have a good surface morphology and 300 K mobilities of 3000–7000 and 100–200 cm2 /V−s, respectively. Data on implant schedules, electrical characteristics, carrier concentration profiles, and Rp /ΔRp information are presented.

Atomic Profiles and Electrical Characteristics of Very High Energy (8–20 MeV) Si Implants in GaAs

1988 ◽  
Vol 128 ◽  
Author(s):  
Phillip E. Thompson ◽  
Harry B. Dietrich ◽  
James M. Eridon ◽  
Thomas Gresko
Keyword(s):  
Integrated Circuits ◽  
Carrier Concentration ◽  
High Energy ◽  
Concentration Profiles ◽  
Atomic Concentration ◽  
Rapid Thermal Anneal ◽  
Microwave Integrated Circuits ◽  
Monolithic Microwave Integrated Circuits ◽  
Experimental Profile ◽  
Very High Energy

ABSTRACTHigh energy Si implantation into GaAs is of interest for the fabrication of fully implanted, monolithic microwave integrated circuits. Atomic concentration profiles of 8, 12, 16, and 20 MeV Si have been measured using SIMS. The range and shape parameters have been determined for each energy. The theoretical atomic concentration profile for 12 MeV Si calculated using TRIM-88 corresponded to the SIMS experimental profile. No redistribution of the Si was observed for either furnace anneal, 825° C, 15 min, or rapid thermal anneal, 1000°C, 10 s. The activation of the Si improved when co-implanted with S. The co-implanted carrier concentration profiles did not show dopant diffusion. Peak carrier concentration of 2×1018/cm3 was obtained with a Si and S dose of 1.5×104/cm2, each.

As and B Ion Implantation Through Mo and into Mo-Silicide Layers for Shallow Junction Formation

1989 ◽  
Vol 157 ◽  
Author(s):  
R. Angelucci ◽  
M. Merli ◽  
S. Solmi ◽  
A. Armigliato ◽  
E. Gabilli ◽  
...  
Keyword(s):  
Ion Implantation ◽  
Carrier Concentration ◽  
Rapid Thermal Annealing ◽  
Current Density ◽  
Reverse Current ◽  
Concentration Profiles ◽  
Leakage Currents ◽  
Junction Formation ◽  
Shallow Junctions ◽  
Silicon Interface

ABSTRACTGood quality p+/n and n+/p shallow junctions (< 0.15 um) with reverse current density of few nA/cm2 and low contact resistivity (∼ 5×10–7 Ω cm2) have been fabricated by using Mo suicide and Rapid Thermal Annealing (RTA). The processes of implantation through Mo films and into MoSi2 layers have been comparatively analysed on the basis of SIMS and carrier concentration profiles, TEM observations and DLTS measurements. In the case of n+/p diodes fabricated by ITM technology slightly worse leakage currents have been observed, in spite of the better planarity of the silicide-silicon interface exhibited by these structures.

Long Period Gratings in Multimode Fiber Fabricated with High-Energy Ion Implantation

2003 ◽  
Vol 22 (4) ◽  
pp. 225-237
Author(s):  
K. J. GRANT ◽  
ROBERTS A. ◽  
D. N. JAMIESON ◽  
B. ROUT ◽  
C. CHER
Keyword(s):  
Ion Implantation ◽  
High Energy ◽  
Multimode Fiber ◽  
Long Period ◽  
Long Period Gratings

Effects of high-energy (MeV) ion implantation of polyester films

1991 ◽  
Vol 59-60 ◽  
pp. 1263-1266 ◽  
Author(s):  
Ueno Keiji ◽  
Matsumoto Yasuyo ◽  
Nishimiya Nobuyuki ◽  
Noshiro Mitsuru ◽  
Satou Mamoru
Keyword(s):  
Ion Implantation ◽  
High Energy

The Vacancy Generation Influence on the Initial Stage of Ion Implantation

2015 ◽  
Vol 1097 ◽  
pp. 29-34
Author(s):  
E.S. Parfenova ◽  
Anna G. Knyazeva
Keyword(s):  
Surface Layer ◽  
Ion Implantation ◽  
Metal Surface ◽  
Impurity Concentration ◽  
Coupled Model ◽  
Irreversible Processes ◽  
Concentration Profiles ◽  
Thermodynamics Of Irreversible Processes ◽  
Vacancy Generation ◽  
Initial Stage

The coupled model is presented to describe the elements penetration into the surface layer of metal during the process of ion implantation. Mechanical stresses arising due to the interaction of particles with the surface affect the redistribution of the implanted impurity. In addition, the existence of vacancies in the metal surface and their generation under the stresses influence are taken into account. The kinetic law is written on the basis of the thermodynamics of irreversible processes. The solution had been found numerically. As a result, the distributions of impurity concentration and deformations have been obtained for various time moments. The comparison of the concentration profiles with vacancies and without their have been given.

High-energy ion implantation in polymer films

Vacuum ◽  
1992 ◽  
Vol 43 (5-7) ◽  
pp. 699-701 ◽  
Author(s):  
L Ya Alimova ◽  
IE Djamaletdinova ◽  
TS Pugacheva ◽  
IE Ilicheva
Keyword(s):  
Ion Implantation ◽  
Polymer Films ◽  
High Energy
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