The effect of surface roughness on Auger electron spectroscopy

1975 ◽  
Vol 7 (3) ◽  
pp. 215-232 ◽  
Author(s):  
P.H. Holloway
1984 ◽  
Vol 45 (C2) ◽  
pp. C2-319-C2-322
Author(s):  
D. Wehbi ◽  
C. Roques-Carmes

1989 ◽  
Vol 65 (3) ◽  
pp. 1230-1233 ◽  
Author(s):  
K. Ounadjela ◽  
H. Lefakis ◽  
V. S. Speriousu ◽  
C. Hwang ◽  
P. S. Alexopoulos

2003 ◽  
Vol 766 ◽  
Author(s):  
Sungjin Hong ◽  
Seob Lee ◽  
Yeonkyu Ko ◽  
Jaegab Lee

AbstractThe annealing of Ag(40 at.% Cu) alloy films deposited on a Si substrate at 200 – 800 oC in vacuum has been conducted to investigate the formation of Cu3Si at the Ag-Si interface and its effects on adhesion and resistivity of Ag(Cu)/Si structure. Auger electron spectroscopy(AES) analysis showed that annealing at 200°C allowed a diffusion of Cu to the Si surface, leading to the significant reduction in Cu concentration in Ag(Cu) film and thus causing a rapid drop in resistivity. In addition, the segregated Cu to the Si surface reacts with Si, forming a continuous copper silicide at the Ag(Cu)/Si interface, which can contribute to an enhanced adhesion of Ag(Cu)/Si annealed at 200 oC. However, as the temperature increases above 300°C, the adhesion tends to decrease, which may be attributed to the agglomeration of copper silicide beginning at around 300°C.


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