Multi-arc ion plating and DC magnetron sputtering integrated technique for high-performance Al,C-co-doped δ-TiN quaternary films

2021 ◽  
Vol 182 ◽  
pp. 109261
Author(s):  
Ruishan Zhao ◽  
Xin Ren ◽  
Kang Wen ◽  
Hua liu ◽  
Meisong Huang ◽  
...  
Keyword(s):  
Magnetron Sputtering ◽  
High Performance ◽  
Dc Magnetron Sputtering ◽  
Arc Ion Plating ◽  
Ion Plating ◽  
Integrated Technique ◽  
Co Doped

Silicon- and aluminum-nitride films deposited by reactive low-voltage ion plating and reactive dc-magnetron sputtering

1994 ◽  
Author(s):  
G. W. Vogl ◽  
K. H. Monz ◽  
Quang D. Nguyen ◽  
Michael Huter ◽  
Eduard P. Rille ◽  
...  
Keyword(s):  
Aluminum Nitride ◽  
Magnetron Sputtering ◽  
Low Voltage ◽  
Dc Magnetron Sputtering ◽  
Ion Plating

The Research of N/C-Codoped TiO2 Films Deposited by Arc Ion Plating

2014 ◽  
Vol 952 ◽  
pp. 55-58
Author(s):  
Shu Juan Zhang ◽  
Ming Sheng Li ◽  
Chong Cao ◽  
Lin Xia Zheng
Keyword(s):  
Absorption Edge ◽  
Annealing Treatment ◽  
Film Structure ◽  
Negative Bias ◽  
Arc Ion Plating ◽  
Ion Plating ◽  
Surface Morphologies ◽  
Co Doped ◽  
Medical Glass ◽  
Absorption Edges

The N/C co-doped TiO2thin films were successfully deposited on medical glass slide by pulsed negative bias arc ion plating. The influence of pulsed negative bias, annealing temperature on films properties was investigated. Film structure, surface morphologies and optical properties were measured with XRD, SEM and UV-VIS transmittance spectroscope. The results show that the most absorption edges of the as-deposited films increase with the rising of the pulse negative bias, and the maximum of 540 nm is achieved under-600V bias. The films absorption edges increase in different degree after annealing at 400°Cfor 2h and 4h, and the best extension can increase 46nm after annealing. The interaction of the annealing treatment and bias functions enhance the N and C reaction activities and extend absorption edge. The greatest absorption edge dater of the co-doped TiO2films under the negative pulse bias for 0V can reach 550nm after the annealing at 400°Cfor 2h. The crystal morphology become inconspicuously with the bias increasing from 0V to-300V, which is corresponding to the XRD result, the anatase diffraction peaks weaken obviously.

Synthesis and properties of CrNx/amorphous-WC nanocomposites prepared using hybrid arc ion plating and direct current magnetron sputtering

2010 ◽  
Vol 519 (2) ◽  
pp. 751-758 ◽  
Author(s):  
Shihong Zhang ◽  
Mingxi Li ◽  
Yizhu He ◽  
Tongyul Cho ◽  
Huigon Chun ◽  
...  
Keyword(s):  
Magnetron Sputtering ◽  
Direct Current ◽  
Arc Ion Plating ◽  
Ion Plating ◽  
Direct Current Magnetron Sputtering

High-performance flexible oxide TFTs: optimization of a-IGZO film by modulating the voltage waveform of pulse DC magnetron sputtering without post treatment

2018 ◽  
Vol 6 (10) ◽  
pp. 2522-2532 ◽  
Author(s):  
Rihui Yao ◽  
Zeke Zheng ◽  
Zhiqiang Fang ◽  
Hongke Zhang ◽  
Xiaochen Zhang ◽  
...  
Keyword(s):  
Magnetron Sputtering ◽  
High Performance ◽  
Post Treatment ◽  
Dc Magnetron Sputtering ◽  
Voltage Waveform ◽  
Oxide Tfts

We propose a facile approach to fabricate high-performance flexible a-IGZO TFTs by adopting the waveform modulation of pulse DC magnetron sputtering.

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