In situ study of low-temperature growth and Mn, Si, Sn doping of GaAs () in molecular beam epitaxy

2004 ◽  
Vol 265 (3-4) ◽  
pp. 425-433 ◽  
Author(s):  
M. Pristovsek ◽  
S. Tsukamoto
Keyword(s):  
Molecular Beam Epitaxy ◽  
Low Temperature ◽  
Molecular Beam ◽  
Temperature Growth ◽  
Low Temperature Growth ◽  
Sn Doping ◽  
In Situ Study

Low‐temperature growth of high resistivity GaP by gas‐source molecular beam epitaxy

1992 ◽  
Vol 61 (14) ◽  
pp. 1646-1648 ◽  
Author(s):  
J. Ramdani ◽  
Y. He ◽  
M. Leonard ◽  
N. El‐Masry ◽  
S. M. Bedair
Keyword(s):  
Molecular Beam Epitaxy ◽  
Low Temperature ◽  
Molecular Beam ◽  
High Resistivity ◽  
Temperature Growth ◽  
Low Temperature Growth ◽  
Gas Source

Low-temperature growth properties of Si1−xGex by disilane and solid-Ge molecular beam epitaxy

1998 ◽  
Vol 193 (4) ◽  
pp. 535-540 ◽  
Author(s):  
J.P. Liu ◽  
M.Y. Kong ◽  
J.P. Li ◽  
X.F. Liu ◽  
D.D. Huang ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Low Temperature ◽  
Molecular Beam ◽  
Temperature Growth ◽  
Low Temperature Growth ◽  
Growth Properties

Low-Temperature Growth of ZnSe by Photoassisted Molecular Beam Epitaxy

1990 ◽  
Vol 29 (Part 2, No. 9) ◽  
pp. L1585-L1587 ◽  
Author(s):  
Takashi Fukada ◽  
Nobuo Matsumura ◽  
Yasumori Fukushima ◽  
Junji Saraie
Keyword(s):  
Molecular Beam Epitaxy ◽  
Low Temperature ◽  
Molecular Beam ◽  
Temperature Growth ◽  
Low Temperature Growth
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