Numerical model of species transport and melt stoichiometry in β-Ga2O3 crystal growth

2022 ◽  
pp. 126526
Author(s):  
Andrei Vorob'ev ◽  
Alex Galyukov ◽  
Andrey Smirnov ◽  
Daria Zimina ◽  
Vladimir Kalaev
Keyword(s):  
Crystal Growth ◽  
Numerical Model ◽  
Species Transport

Experimental Verification of the Numerical Model for a CaF2 Crystal Growth Process

2002 ◽  
Vol 37 (1) ◽  
pp. 77-82 ◽  
Author(s):  
A. Molchanov ◽  
U. Hilburger ◽  
J. Friedrich ◽  
M. Finkbeiner ◽  
G. Wehrhan ◽  
...  
Keyword(s):  
Crystal Growth ◽  
Numerical Model ◽  
Experimental Verification ◽  
Growth Process ◽  
Caf2 Crystal ◽  
Crystal Growth Process

Optimization of Bulk Hgcdte Growth in a Directional Solidification Furnace by Numerical Simulation

1995 ◽  
Vol 398 ◽  
Author(s):  
A.V. Bune ◽  
D.C. Gillies ◽  
S.L. Lehoczky
Keyword(s):  
Heat Transfer ◽  
Numerical Simulation ◽  
Finite Element ◽  
Crystal Growth ◽  
Numerical Model ◽  
Directional Solidification ◽  
Growth Conditions ◽  
Finite Element Code ◽  
Interface Shape ◽  
Solidification Furnace

ABSTRACTA numerical model of heat transfer by combined conduction, radiation and convection was developed using the FIDAP finite element code for NASA's Advanced Automated Directional Solidification Furnace (AADSF). The prediction of the temperature gradient in an ampoule with HgCdTe is a necessity for the evaluation of whether or not the temperature set points for furnace heaters and the details of cartridge design ensure optimal crystal growth conditions for this material and size of crystal. A prediction of crystal/melt interface shape and the flow patterns in HgCdTe are available using a separate complementary model.

Numerical Simulation on Hydrogen Dispersion in Automobiles due to Storage Cylinder Failure

2011 ◽  
Author(s):  
Yan-Lei Liu ◽  
Jin-Yang Zheng ◽  
Shu-Xin Han ◽  
Yong-Zhi Zhao
Keyword(s):  
Numerical Simulation ◽  
Finite Element Method ◽  
Finite Element ◽  
Numerical Model ◽  
Hydrogen Sensor ◽  
High Concentration ◽  
Concentration Region ◽  
Species Transport ◽  
Safety Design ◽  
Simulation Results

A numerical model for dispersion of hydrogen in hydrogen powered automobiles was established basing on finite element method with species transport and reaction module of FLUENT. And corresponding numerical simulations were done in order to analysis the dispersion of hydrogen due to leakage from different position of the storage cylinder on the automobiles. Also, the distribution of the hazard region due to hydrogen dispersion was obtained. The simulation results show that the baffle above the cylinder can accumulate the hydrogen. Therefore, the high concentration region of hydrogen exists near the baffle. The study can provide reference for hydrogen sensor placement and safety design of hydrogen powered automobiles.

scholarly journals Numerical model of protein crystal growth in a diffusive field such as the microgravity environment

2013 ◽  
Vol 20 (6) ◽  
pp. 1003-1009 ◽  
Author(s):  
Hiroaki Tanaka ◽  
Susumu Sasaki ◽  
Sachiko Takahashi ◽  
Koji Inaka ◽  
Yoshio Wada ◽  
...  
Keyword(s):  
Crystal Growth ◽  
Numerical Model ◽  
Protein Crystal ◽  
Microgravity Environment ◽  
Protein Crystal Growth

Montmorillonite Dendrites

1974 ◽  
Vol 32 ◽  
pp. 454-455
Author(s):  
Necip Güven ◽  
Rodney W. Pease
Keyword(s):  
Crystal Growth ◽  
Growth Mechanism ◽  
Growth Front ◽  
Morphological Features ◽  
Dendritic Crystal ◽  
Crystal Growth Mechanism

Morphological features of montmorillonite aggregates in a large number of samples suggest that they may be formed by a dendritic crystal growth mechanism (i.e., tree-like growth by branching of a growth front).

TEM and cathodoluminescence of precipitates in II-VI semiconductors

1988 ◽  
Vol 46 ◽  
pp. 488-489
Author(s):  
Joanna L. Batstone
Keyword(s):  
Crystal Growth ◽  
Band Gap ◽  
Local Strain ◽  
Wide Band ◽  
Optoelectronic Device ◽  
Wide Band Gap ◽  
Bulk Crystal Growth ◽  
Transmission Electron ◽  
Device Applications ◽  
Stoichiometry Control

Interest in II-VI semiconductors centres around optoelectronic device applications. The wide band gap II-VI semiconductors such as ZnS, ZnSe and ZnTe have been used in lasers and electroluminescent displays yielding room temperature blue luminescence. The narrow gap II-VI semiconductors such as CdTe and HgxCd1-x Te are currently used for infrared detectors, where the band gap can be varied continuously by changing the alloy composition x.Two major sources of precipitation can be identified in II-VI materials; (i) dopant introduction leading to local variations in concentration and subsequent precipitation and (ii) Te precipitation in ZnTe, CdTe and HgCdTe due to native point defects which arise from problems associated with stoichiometry control during crystal growth. Precipitation is observed in both bulk crystal growth and epitaxial growth and is frequently associated with segregation and precipitation at dislocations and grain boundaries. Precipitation has been observed using transmission electron microscopy (TEM) which is sensitive to local strain fields around inclusions.

STM studies of crystal growth

1991 ◽  
Vol 49 ◽  
pp. 374-375
Author(s):  
M. G. Lagally
Keyword(s):  
Crystal Growth ◽  
Molecular Beam ◽  
Chemical Vapor ◽  
Sputter Deposition ◽  
Field Of View ◽  
Scanning Tunneling ◽  
Wide Field ◽  
Tunneling Microscopy ◽  
Wide Field Of View ◽  
The One

It has been recognized since the earliest days of crystal growth that kinetic processes of all Kinds control the nature of the growth. As the technology of crystal growth has become ever more refined, with the advent of such atomistic processes as molecular beam epitaxy, chemical vapor deposition, sputter deposition, and plasma enhanced techniques for the creation of “crystals” as little as one or a few atomic layers thick, multilayer structures, and novel materials combinations, the need to understand the mechanisms controlling the growth process is becoming more critical. Unfortunately, available techniques have not lent themselves well to obtaining a truly microscopic picture of such processes. Because of its atomic resolution on the one hand, and the achievable wide field of view on the other (of the order of micrometers) scanning tunneling microscopy (STM) gives us this opportunity. In this talk, we briefly review the types of growth kinetics measurements that can be made using STM. The use of STM for studies of kinetics is one of the more recent applications of what is itself still a very young field.

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